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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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    PERIODIC FLUX INTERRUPTION AND SUSTAINED TWO-DIMENSIONAL GROWTH FOR MOLECULAR-BEAM EPITAXY
    (1989-11-23)
    LEE, CP
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    CHANG, KH
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    LIU, DG
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    WU, JS
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    交大名義發表
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    INFLUENCE OF INDIUM DOPING ON ALGAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    (1990-10-15)
    CHANG, KH
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    LEE, CP
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    WU, JS
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    LIU, DG
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    LIOU, DC
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    2-DIMENSIONAL SIMULATION OF ORIENTATION EFFECTS IN SELF-ALIGNED GAAS-MESFETS
    (1990-10-01)
    LO, SH
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    LEE, CP
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    交大名義發表
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    電控工程研究所
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    National Chiao Tung University
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    CHARACTERIZATION OF IMPROVED ALGAAS/GAAS RESONANT TUNNELING HETEROSTRUCTURE BIPOLAR-TRANSISTORS
    (1991-02-01)
    WU, JS
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    CHANG, CY
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    LEE, CP
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    CHANG, KH
    ;
    LIU, DG
    We report on the fabrication of AlGaAs/GaAs resonant tunneling heterostructure bipolar transistors (RTHBT's). The devices exhibit a current peak in the transfer characteristics, with peak-to-valley current ratios of 1.7 and 9 at 300 K and 77 K, respectively. The common-emitter small signal current gains at 300 K and 77 K reach 40 and 28, respectively. They are the best results to date for AlGaAs/GaAs resonant tunneling transistors. Because the double barriers are placed in the emitter and far from the emitter-base interface, and the heterostructure emitter suppresses the hole injection from the base to the emitter, the occurrence of the negative differential resistance (NDR) in the device characteristics is governed by the emitter current but not by the base current. The operation mechanism of the NDR behavior in the common-emitter output characteristics is discussed.
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    INVESTIGATION OF INDIUM DOPING AND INCORPORATION IN ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES
    (1991-02-28)
    WU, JS
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    CHANG, KH
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    LEE, CP
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    CHANG, CY
    ;
    LIU, DG
    In doping and incorporation in the barrier layers of AlGaAs/GaAs double-barrier resonant tunnelling structures (DBRTSs) have been studied. It was found that the peak-to-valley current ratio (PVCR) can be improved by the proper amount of In doping. This is attributed to the improvement in the quality of the AlGaAs barrier layers due to the high surface migration rate of In atoms that reduces group III vacancies. Also pseudomorphic In(x)(Al0.5Ga0.5)(1-x)As/GaAs (x = 0.12) strained-layer DBRTSs have been fabricated by incorporating a sufficient amount of In into the AlGaAs barrier layers. PVCRs as high as 27.5 at 77 K have been obtained. This is the first realisation of such DBRTSs with lattice-mismatched quaternary barrier layers.
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    NUMERICAL-ANALYSIS OF THE FREQUENCY-DEPENDENT OUTPUT CONDUCTANCE OF GAAS-MESFETS
    (1991-08-01)
    LO, SH
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    LEE, CP
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    物理研究所
    ;
    電控工程研究所
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    Institute of Physics
    The small-signal output conductance of GaAs MESFET's on semi-insulating substrate has been studied using two-dimensional numerical analysis. Frequency-, temperature-, and drain-bias-dependent behaviors of the output conductance are analyzed. It is confirmed that the bulk EL2 traps contribute significantly to the low-frequency-dependent behavior of the output conductance. Devices with different background trap concentration and acceptor concentration have been analyzed and compared. For devices with higher trap concentration and higher acceptor concentration, the output conductance is lower but exhibits stronger frequency dependence.
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    NUMERICAL-ANALYSIS OF THE LOOPING EFFECT IN GAAS-MESFETS
    (1992-02-01)
    LO, SH
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    LEE, CP
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    電子工程學系及電子研究所
    ;
    奈米中心
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    Department of Electronics Engineering and Institute of Electronics
    The looping effect in the I(D)-V(D) characteristics of GaAs MESFET's on semi-insulating substrates has been studied using a two-dimensional numerical analysis. Both the transient and the steady-state behaviors of the looping phenomenon are simulated and discussed. Peak voltage- and frequency-dependent behaviors of the looping effect are analyzed. The I(D)-V(D) loop is due to the difference in the distribution of ionized EL2 concentration when the drain voltage rises and falls because of the trapping process of EL2's. The output conductance is also found to be frequency-dependent and is explained by the frequency-dependent modulation of the potential barrier height at the channel/substrate interface due to the drain-voltage variation.
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    NUMERICAL-ANALYSIS OF THE PHOTOEFFECTS IN GAAS-MESFETS
    (1992-07-01)
    LO, SH
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    LEE, CP
    ;
    電子工程學系及電子研究所
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    Department of Electronics Engineering and Institute of Electronics
    The photoeffects on the I-V characteristics of GaAs MESFET's have been studied by a two-dimensional numerical method. It is theoretically verified that the photovoltaic effect occurring at the channel/substrate interface is responsible for the substantial increase of the drain current. The reverse gate current due to illumination is caused by sweep-out by the high electrical field in the gate depletion region, where a large gradient in the depth profile of the hole Fermi energy is found. For devices with a lightly doped n-type buffer layer, the increase of the drain current is less than for devices without a buffer layer, but is still substantial.
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    NUMERICAL-SIMULATION OF THE HYSTERESIS IN THE SIDEGATING EFFECT IN GAAS-MESFETS - THE EFFECT OF SCHOTTKY CONTACTS
    (1992-08-01)
    CHANG, SJ
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    LEE, CP
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    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    Two-dimensional simulation of the sidegating effect in GaAs MESFET's has been performed. The result confirms that Schottky contacts on semi-insulating substrate cause serious high substrate leakage current and drain current reduction in GaAs MESFET's. The competition between the currents or biases of the contacts is found to be the cause of the S-type negative differential conductivity (S-NDC) or hysteresis observed when measuring the sidegating threshold.