學術出版;;Publications
Permanent URI for this communityhdl:11536/1
收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作,涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.
Browse
66 results
Search Results
Item type:Item, ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS ON SI SUBSTRATE USING EPITAXIAL LIFT-OFF(1995-09-01) ;FAN, JC ;LEE, CP ;HWANG, JA ;HWANG, JH電子工程學系及電子研究所Epitaxial lift-off (ELO) technique was used for the first time to transplant AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT's) to Si substrates. Both preprocessed (devices processed before transplantation) and postprocessed (devices processed after transplantation) ELO HBT's On Si were demonstrated in this study. The characteristics of those HBT's on Si with either technique show nearly identical characteristics of the HBT's on GaAs without transplantation, indicating the film quality is maintained after transplantation. Devices with a high current gain of 550 were transplanted without any degradation, and the current gain is not limited by the ELO process. This current gain value is the highest reported for GaAs HBT's on Si with any techniques.Item type:Item, ENHANCEMENT OF ELECTRON-WAVE REFLECTION BY SUPERLATTICES WITH MULTIPLE STACKS OF MULTIQUANTUM BARRIERS(1994-02-28) ;YEN, ST ;TSAI, CM ;LEE, CP ;LIU, DC電子工程學系及電子研究所We report a superlattice (SL) with multiple stacks of multiquantum barriers (MQB), which can reflect electrons more effectively than with a single stack of MQB. The reflectivities are calculated and compared with one another for a variety of potential barrier structures. The multistack SL has a wider energy spectrum within which electrons are reflected. Four types of n-GaAs/i-barrier/n-GaAs diodes were fabricated to confirm the calculated results. The current-voltage characteristics measured at 77 K for these diodes show that the turn-on voltage increases with the number of stacks of MQBs in the SL. This is in agreement with our calculated results.Item type:Item, EVALUATION OF NI-IN-NI MULTILAYERS FOR THERMALLY STABLE OHMIC CONTACTS TO N-GAAS(1995-09-01) ;HSIA, ST ;LEE, CP ;HWANG, HL ;電子工程學系及電子研究所Department of Electronics Engineering and Institute of ElectronicsA thermally stable, low resistance ohmic contact system Ni-Ln-Ni to n-GaAs was investigated. The lowest value of the specific contact resistance rho(c) was 1.71 x 10(-4) Omega cm(2). Hearing the contact up to 400 degrees C for 5 h did not obviously change the value of rho(c). It was observed by Auger electron spectroscopy and X-ray diffraction that Ni-Ln compounds, Ga-Ni and InAs formed at the metal-GaAs interface. It was noted that In reacted with GaAs and formed a heterojunction ohmic contact (such as InAs-InxGa1-xAs-GaAs) and due to the low melting point (156 degrees C) of In, additions of Ni are needed to completely react the remaining In to form a high melting point compound.Item type:Item, TANTALUM SILICIDE SCHOTTKY CONTACTS TO GAAS(1989-01-15) ;LEE, CP ;LIU, TH ;LEI, TF ;WU, SC奈米中心Item type:Item, ORIGIN OF THE ENHANCEMENT OF NEGATIVE DIFFERENTIAL RESISTANCE AT LOW-TEMPERATURES IN DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES(1989-07-01) ;WU, JS ;CHANG, CY ;LEE, CP ;WANG, YHKAI, FItem type:Item, COMPOSITIONAL DEPENDENCE OF THERMAL-STABILITY OF REFRACTORY-METAL SILICIDE SCHOTTKY CONTACTS TO GAAS(1989-09-01) ;LEE, CP ;LIU, TH ;WU, SC ;奈米中心Nano Facility CenterItem type:Item, PERIODIC FLUX INTERRUPTION AND SUSTAINED TWO-DIMENSIONAL GROWTH FOR MOLECULAR-BEAM EPITAXY(1989-11-23) ;LEE, CP ;CHANG, KH ;LIU, DG ;WU, JS交大名義發表Item type:Item, COMPARISON OF AU/NI/GE, AU/PD/GE, AND AU/PT/GE OHMIC CONTACTS TO N-TYPE GAAS(1990-01-01) ;LIN, C ;LEE, CP ;電控工程研究所Institute of Electrical and Control EngineeringItem type:Item, REPETITION OF NEGATIVE DIFFERENTIAL RESISTANCE IN VERTICALLY INTEGRATED DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES(1990-05-01) ;WU, JS ;LEE, CP ;CHANG, CY ;CHANG, KHLIU, DGItem type:Item, INFLUENCE OF INDIUM DOPING ON ALGAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY(1990-10-15) ;CHANG, KH ;LEE, CP ;WU, JS ;LIU, DGLIOU, DC