🏛️國立陽明交通大學機構典藏

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FREE-CARRIER ABSORPTION IN N-TYPE GALLIUM-ARSENIDE IN QUANTIZING MAGNETIC-FIELDS
(1991-03-15)
WU, CC
;
TSAI, J
;
LIN, CJ
;
應用數學系
;
電子工程學系及電子研究所
Free-carrier absorption in n-type GaAs in quantizing magnetic fields has been investigated quantum mechanically. It is assumed that the energy gand of electrons in semiconductors is nonparabolic and the dominant scattering mechanism for electrons is acoustic-phonon scattering via deformation-potential coupling. When the radiation field is polarized parallel to the magnetic field, the free-carrier absorption coefficient assumes a complex value due to the ac radiation and phonon fields. Our results show that the real part of the absorption coefficient and the imaginary part of the absorption coefficient oscillate with the magnetic field. However, at very low temperatures, oscillations in the imaginary part are diminished and its value decreases rapidly with increasing magnetic field.
MAGNETIC-FIELD DEPENDENCE OF ELECTRON-DENSITY IN BISMUTH
(1983)
WU, CC
;
CHEN, MH
;
LIN, CJ
;
應用數學系
;
電控工程研究所
THE EFFECT OF SCATTERING MECHANISMS ON TRANSVERSE MAGNETORESISTANCE IN PIEZOELECTRIC SEMICONDUCTORS
(1987-01-01)
WU, CC
;
LIN, CJ
;
電控工程研究所
;
Institute of Electrical and Control Engineering
SCATTERING MECHANISMS OF THE HALL-EFFECT AND TRANSVERSE MAGNETORESISTANCE IN NON-DEGENERATE PIEZOELECTRIC SEMICONDUCTORS
(1988-02-01)
WU, CC
;
LIN, CJ
;
TSAI, J
;
交大名義發表
;
電控工程研究所
A SYSTOLIC GENERATION OF COMBINATIONS
(1989)
LIN, CJ
;
TSAY, JC
;
應用數學系
;
Department of Applied Mathematics
A PARALLEL ALGORITHM FOR GENERATING COMBINATIONS
(1989)
LIN, CJ
;
應用數學系
;
資訊工程學系
;
Department of Applied Mathematics
;
Department of Computer Science
PARALLEL ALGORITHM FOR GENERATING PERMUTATIONS ON LINEAR-ARRAY
(1990-08-07)
LIN, CJ
;
交大名義發表
;
應用數學系
;
National Chiao Tung University
;
Department of Applied Mathematics
MULTIYEAR MULTI-CASE OPTIMAL VAR PLANNING
(1990-11-01)
HONG, YY
;
SUN, DI
;
LIN, SY
;
LIN, CJ
;
電控工程研究所
GENERATING SUBSETS ON A SYSTOLIC ARRAY
(1991)
LIN, CJ
;
交大名義發表
;
應用數學系
;
National Chiao Tung University
;
Department of Applied Mathematics
INFLUENCE OF NONPARABOLICITY ON HOT-ELECTRONS IN N-TYPE GALLIUM-ARSENIDE
(1992-03-01)
WU, CC
;
LIN, CJ
;
電控工程研究所
;
Institute of Electrical and Control Engineering
Hot-electron transport in n-type GaAs has been investigated in the crossed applied DC electric field and DC magnetic field. The energy band structure of conduction electrons is taken to be a non-parabolic band and the dominant interaction between hot electrons and lattices is assumed to be the deformation-potential coupling. Results show that the dissipative current density increases nonlinearly with the applied electric field owing to the non-parabolic band structure of electrons in semiconductors. In the lower electric field region, the dependence of the current density on temperature does not appear to follow a regular trend. It is also shown that the current density depends strongly on the magnetic field.

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🏛️國立陽明交通大學機構典藏

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