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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.LIN, CTSubject: search.filters.subject.JUNCTION DEPTH

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    NOVEL TECHNIQUE TO FORM PT-SILICIDED SHALLOW P(+)N JUNCTIONS USING LOW-TEMPERATURE PROCESSES
    (1995-09-01)
    MA, KP
    ;
    LIN, CT
    ;
    CHENG, HC
    ;
    奈米中心
    ;
    Nano Facility Center
    By implanting BF2+ ions into thin polycrystalline Si films with subsequent low-temperature (as low as 500 degrees C) annealing, excellent Pt-silicided shallow p(+)n junctions have been formed. The samples implanted under the conditions of 100 keV/5 x 10(15) cm(-2) showed a leakage of 7 nA/cm(2) and a junction depth of about 0.05 mu m after 500 degrees C annealing, and the current leakages further decreased to a value at about 2 nA/cm(2) when the annealing temperature was raised to 550 degrees C. Various conditions of implant and annealing were examined to determine and characterize their effects on the resultant junctions.
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    Item type:Item,
    LOW-TEMPERATURE FORMATION OF PALLADIUM SILICIDED SHALLOW P(+)N JUNCTIONS USING IMPLANT THROUGH METAL TECHNOLOGY
    (1994-06-01)
    LIN, CT
    ;
    CHOU, PF
    ;
    CHENG, HC
    ;
    奈米中心
    ;
    Nano Facility Center
    Excellent silicided shallow pin junctions have been successfully achieved by the implantation of BF: ions into thin Pd films on a Si substrate to a dose of 5 x 10(15) cm(-2) and subsequent low-temperature (as low as 500 degrees C) furnace annealing. The formed junctions have been characterized for the respective implantation conditions. In this experiment, the implant energy plays the key role in obtaining a low leakage diode. Reverse current density of about 1 nA/cm(2) and the ideality factor of about 1.03 can be attained by the implantation of BF2+ ions at 100 keV and subsequent annealing at 600 degrees C. The junction depth is about 0.08 mu m, measured by the spread resistance method. As compared with the results of unimplanted specimens, the implantation of BF2+ ions into a thin Pd layer can stabilize the Pd silicide film and prevent it from forming islands during high-temperature annealing. High-temperature stability of palladium silicides and the leakage current mechanism are also discussed in this report.
  • Thumbnail Image
    Item type:Item,
    NOVEL TECHNIQUE TO FORM PT-SILICIDED SHALLOW P(+)N JUNCTIONS USING LOW-TEMPERATURE PROCESSES
    (1995-09-01)
    MA, KP
    ;
    LIN, CT
    ;
    CHENG, HC
    ;
    奈米中心
    ;
    Nano Facility Center
    By implanting BF2+ ions into thin polycrystalline Si films with subsequent low-temperature (as low as 500 degrees C) annealing, excellent Pt-silicided shallow p(+)n junctions have been formed. The samples implanted under the conditions of 100 keV/5 x 10(15) cm(-2) showed a leakage of 7 nA/cm(2) and a junction depth of about 0.05 mu m after 500 degrees C annealing, and the current leakages further decreased to a value at about 2 nA/cm(2) when the annealing temperature was raised to 550 degrees C. Various conditions of implant and annealing were examined to determine and characterize their effects on the resultant junctions.