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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.LIN, JKSubject: search.filters.subject.SONOS

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    TRANSIENT AND STEADY-STATE CARRIER TRANSPORT UNDER HIGH-FIELD STRESSES IN SONOS EEPROM DEVICE
    (1993-06-01)
    LIN, JK
    ;
    CHANG, CY
    ;
    HUANG, HS
    ;
    HO, TS
    ;
    CHEN, KL
    The carrier transport model of tunneling oxide in a polysilicon-oxide-nitride-oxide-silicon (SONOS) device has been developed. The model is deduced from WKB approximation, and uses Fermi-Dirac statistics. Using the J-E and accompanied by Arnett's trapping model, the switching behavior of the SONOS device can be predicted in a very wide range of switching times from 1 mus to 0.1 s. The steady-state charge distribution and electric field in Si3N4 are also calculated. From Arnett's fundamental equations of Si3N4, we deduce the steady-state equations which describe the electric field and trapping charges. The trapping parameters and detrapping factor v are discussed and the results are obtained via computer for different temperatures and stress voltages, which are based on the current measurement of SONOS devices. We find that the detrapping effect is somewhat less dominant compared to the trapping effect in our simulations.
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    Item type:Item,
    NEW POLYSILICON-OXIDE-NITRIDE-OXIDE-SILICON ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY DEVICE APPROACH FOR ELIMINATING OFF-CELL LEAKAGE CURRENT
    (1994-05-01)
    LIN, JK
    ;
    CHANG, CY
    ;
    HUANG, HS
    ;
    CHEN, KL
    ;
    KUO, DC
    A new polysilicon-oxide-nitride-oxide-silicon (SONOS) electrically erasable programmable read-only memory (EEPROM) device, which eliminated off-cell leakage current, has been described and fabricated. The leakage current is easily encountered in metal-nitride-oxide-silicon (MNOS)-type EEPROMs. Two parasitic transistors, which are in parallel with the desired variable V(t) cell, are responsible for the leakage current. We demonstrated that the parasitic transistors are caused either by the nearly constant-threshold-voltage parasitic transistors surrounding the active region or by the ''fringing effect'' in poly-Si gate edges. The on-state and off-state I-V curves of the cell are shown and compared with those of two other different devices. The results reveal that the off-cell leakage current, which is observed in the other two devices, is completely eliminated in the proposed cell.