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Reoxidation behavior of high-nitrogen oxynitride films after O-2 and N2O treatment
(2005-05-01)
Lin, BC
;
Chang, KM
;
Lai, CH
;
Hsieh, KY
;
Yao, JM
Reoxidation of a high-nitrogen ultrathin oxynitride (similar to 1.3nm) has been studied. The reoxidation is conducted using an alternation of nitrous oxide and oxygen gas in rapid thermal oxidation (RTO). The new finding in this study is the zig-zag characteristic of the oxidation rate by O-2 and N2O. It is clear that the N2O oxidation rate is almost independent of the concentration of nitrogen in oxynitride through out the rapid thermal oxidation process, but the O2 oxidation rate is not.
Positive giant magnetoresistance in ferrimagnetic/Cu/ferrimagnetic films
(2001-06-01)
Lai, CH
;
Lin, CC
;
Chen, BM
;
Shieh, HPD
;
Chang, CR
Spin valves composed of ferrimagnetic/Cu/ferrimagnetic layers were fabricated with the magnetization perpendicular to the film planes. By changing the composition of ferrimagnetic layers, both negative and positive giant magnetoresistance (GMR) can be observed in ferrimagnetic spin valves. For samples consisting of both transition-metal (TM-) rich TbFeCo and GdFeCo, negative GMR values were obtained. Due to the high resistivity of amorphous ferrimagnetic films, the shunting effect of Cu led to relatively small MR ratio. The negative MR effect was 1% for 1.7 nm Cu. For spin valves consisting of rare-earth (RE-)rich TbFeCo and TM-rich GdFeCo, positive GMR values were observed. A thin layer of Co was inserted between RE-rich TbFeCo and Cu to manipulate the sign of GMR. (C) 2001 American Institute of Physics.
Magnetic properties and recording characteristics of high magnetization exchange-coupled double-layer TbFeCo for magnetic flux reading optical recording
(2001-07-01)
Chen, BM
;
Lai, CH
;
Shieh, HPD
;
光電工程學系
;
Department of Photonics
The magnetic properties and recording characteristics of exchange-coupled double-layer (ECDL) disks consisting of a transition metal-rich TbFeCo readout layer with high magnetization and a recording layer were studied for magnetic flux reading optical recording. The effective coercivity of ECDL with rare-earth (recording)/transition metal-rich (readout) films could be greatly enhanced from 1.7 to 7.6kOe through exchange coupling between two active layers. Moreover, ECDL disks possess a lower recording bias field (100 Oe) and a lower onset field (- 150 Oe) for thernioniagnetic writing. The enhanced effective coercivity was explained by the Kobayashi model, and the lower bias field and onset field of ECDL disks were analyzed by the modified nucleation field model. The ECDL disks with magnetization over 300 emu/cm(3), high stability and low recording bias field are potentially applicable for magnetic flux readout toward high density recording at a high writing rate.
High-density MIM capacitors using Al2O3 and AlTiOx dielectrics
(2002-04-01)
Chen, SB
;
Lai, CH
;
Chin, A
;
Hsieh, JC
;
Liu, J
We have investigated the electrical characteristics of Al2O3 and AlTiOx MIM capacitors from IF (100 KHz) to RF (20 GHz) frequency range. Record high capacitance density of 0.5 and 1.0 muF/cm(2) are obtained for Al2O3 and AlTiOx MIM capacitors, respectively, and the fabrication process is compatible to existing VLSI backend integration. However, the AlTiOx MIM capacitor has very large capacitance reduction as increasing frequencies. In contrast, good device integrity has been obtained for Al2O3 MIM capacitor as evidenced from the small frequency dependence, low leakage current, good reliability, small temperature coefficient, and low loss tangent.
Frequency-dependent capacitance reduction in high-k AlTiOx and Al2O3 gate dielectrics from IF to RF frequency range
(2002-04-01)
Chen, SB
;
Lai, CH
;
Chan, KT
;
Chin, A
;
Hsieh, JC
We have characterized the capacitance and loss tangent for high-k Al2O3 and AlTiOx gate dielectrics from IF (100 KHz) to RF (20 GHz) frequency range. Nearly the same rate of capacitance reduction as SiO2 was demonstrated individually by the proposed Al2O3 and AlTiOx gate dielectrics as frequency was increased. Moreover, both dielectrics preserve the higher k better than SiO2 from 100 KHz to 20 GHz. These results suggest that both Al2O3 and AlTiOx are suitable for next generation MOSFET application into RF frequency regime.
Formation of Ni germano-silicide on single crystalline Si0.3Ge0.7/Si
(2002-08-01)
Lin, CY
;
Chen, WJ
;
Lai, CH
;
Chin, A
;
Liu, J
We have studied the Ni and Co germano-silicide on Si0.3Ge0.7/Si. The Ni germano-silicide shows a low sheet resistance of 4-6 Omega/square on both P+N and N+P junctions, which is much smaller than Co germano-silicide. In addition, small junction leakage currents of 3 x 10(-8) A/cm(2) and 2 x 10(-7) A/cm(2) are obtained for Ni germano-silicide on P+ N and N+ P junctions, respectively. The good germano-silicide integrity is due to the relatively uniform thickness as observed by cross-sectional TEM.
RF noise in 0.18-mu m and 0.13-mu m MOSFETs
(2002-12-01)
Huang, CH
;
Lai, CH
;
Hsieh, JC
;
Liu, J
;
Chin, A
We have studied the gate finger number and gate ength dependence on minimum noise figure (NFmin) in deep submicrometer MOSFETs. A lowest NFmin. of 0.93 dB is measured in 0.18-mum MOSFET at 5.8 GHz as increasing finger number to 50 fingers, but increases abnormally when above 50. The scaling gate length to 0.13 mum shows larger NFmin than the 0.18-mum case at the same finger number. From the analysis of a well-calibrated device model, the abnormal finger number dependence is due to the combined effect of reducing gate resistance and increasing substrate loss as increasing finger number. The scaling to 0.13-mum MOSFET gives higher NFmin due to the higher gate resistance and a modified T-gate structure proposed to optimize the NFmin for further scaling down of the MOSFET.
High interfacial exchange energy in TbFeCo exchange-bias films
(2003-05-15)
Lin, CC
;
Lai, CH
;
Jiang, RF
;
Shieh, HPD
;
光電工程學系
The exchange-bias films of ferrimagnetic/ferrimagnetic, ferromagnetic/ferromagnetic, and ferromagnetic/antiferromagnetic bilayers were fabricated to investigate their interfacial exchange energy Deltasigma. Deltasigma of TbFeCo bilayers is larger than 5 erg/cm(2) at room temperature. By varying the composition of TbFeCo layers, both positive and negative exchange bias have been observed. A highly uncompensated-spin interface model was proposed to explain the strong exchange interaction in TbFeCo bilayers. Due to the characteristics of highly uncompensated-spin interface at TbFeCo bilayers, the exchange coupling field in TbFeCo bilayers exhibited less dependence on interfacial roughness than that in IrMn/NiFe bilayers. In addition, by adjusting the composition of TbFeCo, the anisotropy of pinning layer can be manipulated and exhibits strong effects on exchange bias of TbFeCo bilayers. (C) 2003 American Institute of Physics.
Thickness dependence of Co anisotropy in TbFe/Co exchange-coupled bilayers
(2004-06-01)
Lin, CC
;
Lai, CH
;
Wei, DH
;
Hsu, YJ
;
Shieh, HPD
The orientation of element-specific moments was determined by using x-ray magnetic circular dichroism spectroscopy to explore exchange anisotropy of TbFe/Co bilayers. Perpendicular anisotropy of 15 Angstrom Co was induced by TbFe through exchange coupling, resulting in the out-of-plane Co moments. With increasing the thickness, Co moments were gradually tilted to the in-plane orientation because of increasing planar anisotropy. In the bilayer with thick Co, interfacial Fe moments were unidirectionally aligned in the plane, leading to in-plane exchange bias of Co. The coercivity and exchange bias field of Co in the bilayers exhibited a strong dependence on Co thickness. (C) 2004 American Institute of Physics.
RF MIM capacitors using high-K Al2O3 and AlTiOx dielectrics
(2002)
Chen, SB
;
Lai, CH
;
Chin, A
;
Hsieh, JC
;
Liu, J
Record high capacitance density of 0.5 and 1.0 muF/cm(2) are obtained for Al2O3 and AlTiOx MIM capacitors respectively, with loss tangent < 0.01 and process compatible to existing VLSI back-end integration. However, the AlTiOx MINI capacitor has large capacitance reduction as increasing frequencies. In contrast, the Al2O3 MINI capacitor has good device integrity of low leakage current of 4.3x10(-8) A/cm(2), small frequency-dependent capacitance reduction, and good reliability.

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