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Author: search.filters.author.Lai, YLSubject: search.filters.subject.Au/Mo/Ti/Ge/Pd metallization

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    Excellent Au/Ge/Pd ohmic contacts to n-type GaAs using Mo/Ti as the diffusion barrier
    (1996-04-01)
    Chai, CY
    ;
    Huang, JA
    ;
    Lai, YL
    ;
    Wu, JW
    ;
    Chang, CY
    Au/Ge/Pd metallization system using Mo/Ti as the diffusion barrier between the Au overlayer and the Ge/Pd underlayer has been performed for the first time to achieve excellent ohmic contacts to n(+)-GaAs with the Si-doping concentration of about 2 x 10(18) cm(-3). The minimum specific contact resistivity as low as 1.2 x 10(-7) Ohm . cm(2) can be obtained after the rapid thermal annealing at 325 degrees C for 60 s, which is much lower than those of the conventional Au/Ge/Pd metallization systems. Furthermore, the available annealing temperature range for such low specific contact resistivities is also significantly extended from 325 degrees C to 400 degrees C. The improvement is attributed to the effective retardation of As-outdiffusion by the Mo/Ti barrier.
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    Au/Ge/Pd ohmic contacts to n-GaAs with the Mo/Ti diffusion barrier
    (1996-12-01)
    Chai, CY
    ;
    Huang, JA
    ;
    Lai, YL
    ;
    Wu, JW
    ;
    Chang, CY
    The influences of the As-outdiffusion and Au-indiffusion on the performances of the Au/Ge/Pd/n-GaAs ohmic metallization systems are clarified by investigating three different types of barrier metal structures Au/Ge/Pd/GaAs, Au/Ti/Ge/Pd/GaAs, and Au/Mo/Ti/Ge/Pd/GaAs. The results indicate? that As-outdiffusion leads to higher specific contact resistivity, whereas Au-indiffusion contributes to the turnaround of the contact resistivity at even higher annealing temperature. For Au/Mo/Ti/Ge/Pd/n-GaAs samples, they exhibit the smoothest surface and the lowest specific contact resistivity with the wildest available annealing temperature,range, Moreover, Auger electron spectroscopy depth profiles show that the existing Ti oxide for the Mo/Ti bilayer can very effectively retard Au-indiffusion, reflecting the onset of the turnaround point at much higher annealing temperature.