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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Lai, YLSubject: search.filters.subject.PHS

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    High-power-density and high-efficiency atomic-planar-doped AlGaAs/InGaAs quantum-well power high-electron-mobility transistors for 2.4 V medium-power wireless communication applications
    (1997-03-01)
    Lai, YL
    ;
    Chang, EY
    ;
    Chang, CY
    ;
    Liu, TH
    ;
    Wang, SP
    A high-power-density and high-efficiency molecular-beam-epitaxy-grown atomic-planar-doped AlGaAs/InGaAs quantum-well power high-electron-mobility transistor (HEMT) was developed for low-voltage medium-power wireless communication applications. The HEMT exhibited a maximum drain current of 420 mA/mm and a maximum transconductance of 275 mS/mm. A two-dimensional electron gas with a high sheet charge density and a high electron mobility in the InGaAs quantum well contributed to the high current density and high transconductance of the HEMT and enhanced the device power performance at low operating voltage. An output power density of 177 mW/mm and a power-added efficiency of 61% were achieved by the 2 mm HEMT at a drain voltage of 2.4 V and a frequency of 900 MHz. At 2.1 V drain voltage and 2.4 GHz, frequency, the device demonstrated an output power of 24.4 dBm and a power-added efficiency of 57.4%. An adjacent channel leakage power of -55 dBc was attained for the 1.9-GHz pi/4-shifted quadrature phase shift keying modulation when the output power was 22.2 dBm and the drain voltage was 2.4 V.