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Author: search.filters.author.Lai, Yu-HongSubject: search.filters.subject.muscovite

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Now showing 1 - 3 of 3
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    Giant Resistivity Change of Transparent ZnO/Muscovite Heteroepitaxy
    (2020-05-13)
    Yen, Min
    ;
    Lai, Yu-Hong
    ;
    Zhang, Chun-Li
    ;
    Cheng, Hou-Yung
    ;
    Hsieh, Yi-Ting
    The piezoresistive effect has shown a remarkable potential for mechanical sensor applications and been sought for its excellent performance. A great attention was paid to the giant piezoresistive effect and sensitivity delivered by silicon-based nanostructures. However, low thermal stability and complicated fabrication process hinder their practical applications. To overcome these issues and enhance the functionalities, we envision the substantial piezopotential in a zinc oxide (ZnO)/muscovite (mica) heteroepitaxy system based on theoretical consideration and realize it in practice. High piezoresistive effect with giant change of resistivity (-80 to 240%) and large gauge factor (>1000) are demonstrated through mechanical bending. The detailed features of heteroepitaxy, electrical transport, and strain are probed to understand the mechanism of such a giant resistivity change. In addition, a bending model is established to reveal the distribution of strain. Finally, we demonstrate a flex sensor featuring high sensitivity, optical transparency, and two-segment sensing with a great potential toward practical applications. Such an oxide heteroepitaxy exhibits excellent piezoresistive properties and mechanical flexibility. In the near future, the importance of flex sensors will emerge because of the precise control in the automation industries, and our results lead to a new design in the field of flex sensors.
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    Heteroepitaxy of Co-Based Heusler Compound/Muscovite for Flexible Spintronics
    (2019-09-25)
    Chen, Yi-Cheng
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    Yen, Min
    ;
    Lai, Yu-Hong
    ;
    Markou, Anastasios
    ;
    Zhang, Liguo
    Materials with high spin-polarization play an important role in the development of spintronics. Co-based Heusler compounds are a promising candidate for practical applications because of their high Curie temperature and tunable half-metallicity. However, it is a challenge to integrate Heusler compounds into thin film heterostructures because of the lack of control on crystallinity and chemical disorder, critical factors of novel behaviors. Here, muscovite is introduced as a growth substrate to fabricate epitaxial Co2MnGa films with mechanical flexibility. The feature of heteroepitaxy is evidenced by the results of X-ray diffraction and transmission electron microscopy. Moreover, high chemical ordering with superior properties is delivered according to the observation of large Hall conductivity (680 Omega(-1) cm(-1)) and highly saturated magnetic moment (similar to 3.93 mu(B)/f.u.), matching well with bulk crystals. Furthermore, the excellence of magnetic and electrical properties is retained under the various mechanical bending conditions. Such a result suggests that the development of Co2MnGa/muscovite heteroepitaxy provides not only a pathway to the thin film heterostructure based on high-quality Heusler compounds but also a new aspect of spintronic applications on flexible substrates.
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    Oxide Heteroepitaxy-Based Flexible Ferroelectric Transistor
    (2019-07-24)
    Tsai, Meng-Fu
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    Jiang, Jie
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    Shao, Pao-Wen
    ;
    Lai, Yu-Hong
    ;
    Chen, Jhih-Wei
    With the rise of Internet of Things, the presence of flexible devices has attracted significant attention owing to design flexibility. A ferroelectric field-effect transistor (FeFET), showing the advantages of high speed, nondestructive readout, and low-power consumption, plays a key role in next-generation technology. However, the performance of these devices is restricted since conventional flexible substrates show poor thermal stability to integrate traditional ferroelectric materials, limiting the compatibility of wearable devices. In this study, we adopt flexible muscovite mica as a substrate due to its good thermal properties and epitaxial integration ability. A flexible FeFET composed of oxide heteroepitaxy on muscovite is realized by combining an aluminum-doped zinc oxide film as the semiconductor channel layer and a Pb(Zro7Ti0.3)03 film as the ferroelectric gate dielectric. The excellent characteristics of the transistor together with superior thermal stability and mechanical flexibility are demonstrated through various mechanical bending and temperature measurements. The on/off current ratio of the FeFET is higher than 103, which based on the field effect in the transfer curve. The smallest bending radius that can be achieved is 5 mm with a cyclability of 300 times and a retention of 100 h. This study opens an avenue to use oxide heteroepitaxy to construct a FeFET for next-generation flexible electronic systems.