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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Lan, WHSubject: search.filters.subject.GaN

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Now showing 1 - 3 of 3
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    Beryllium-implanted P-type GaN with high carrier concentration
    (2001-05-01)
    Yu, CC
    ;
    Chu, CF
    ;
    Tsai, JY
    ;
    Lin, CF
    ;
    Lan, WH
    We report the results of beryllium implantation in Mg-doped GaN to obtain a high hole concentration and lower activation energy for Mg. The metal organic chemical vapor deposition (MOCVD)-grown Mg-doped GaN samples were implanted with Be ions at two different energies of 50 keV and 150 keV and a dose of 10(14) cm(-2). The implemented samples were subsequently annealed at 1100 degreesC for 60 s. The annealed samples showed an increase of hole concentration by three orders of magnitude from the non-implanted value of 5.5 x 10(16) to 8.1 x 10(19) cm(-3) as determined by Hall measurement. The activation energy of Mg dopants for the implanted annealed samples estimated from the temperature dependence of the photoluminescence data is about 170 meV, which is nearly 30% lower than that for the as-grown samples.
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    GaN-based light-emitting diodes with Ni/AuBe transparent conductive layer
    (2003-10-01)
    Chen, LC
    ;
    Hsu, CY
    ;
    Lan, WH
    ;
    Teng, SY
    ;
    材料科學與工程學系
    Ni/AuBe as p-type ohmic contact to p-GaN in the heat treatment process are reported. By selection of an optimum condition, the best construction of Ni/AuBe bi-layers is 5 nm/5 nm thick. The light-transmission is about 75% for 470 nm blue light and the lowest specific contact resistance obtained is 2 x 10(-3) Omega cm(2) examined by transmission line model after heat treatment process at 500 degreesC alloying temperature during 10 min in nitrogen ambient. The Be atom may plays an important role in the formation of good ohmic contacts. On the other hand, Ni/AuBe bi-layers are also applied to GaN-based light-emitting diodes (LEDs) as p-type ohmic contact electrode. The typical I-V characteristics of the GaN-based LEDs with 5 nm/5 nm-thick Ni/AuBe TCL exhibit a forward-bias voltage of 3.41 V at injection Current of 20 mA. (C) 2003 Elsevier Ltd. All rights reserved.
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    Thermal annealing effect of indium tin oxide contact to GaN light-emitting diodes
    (2005-10-01)
    Hsu, CY
    ;
    Lan, WH
    ;
    Wu, YCS
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    We have fabricated GaN-based light-emitting diodes (LEDs) using transparent indium tin oxide (ITO) for p-type contacts. The current-voltage (I-V) characteristics of the devices have been studied. When annealed at 700 degrees C, the p-n junction of the diodes became very leaky, and even electrical short circuits have been observed. According to scanning electron microscopy (SEM) and energy-dispersive X-ray spectrometer analyses (EDS), it was found that indium (In) diffused into the LED structure with defects such as threading dislocations (TDs) or V-pits. The defects provide leakage paths to cause short circuits in p-n junctions at high annealing temperatures.