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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Lan, WHSubject: search.filters.subject.molecular beam epitaxy

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    Characteristics of nonalloyed pseudomorphic high electron mobility transistors using InAs/InxGa1-xAs (x=-> 0) AlyGa1-yAs (y=0 -> 0.3) contact structures
    (1997-06-01)
    Chen, SS
    ;
    Lin, CC
    ;
    Lan, WH
    ;
    Tu, SL
    ;
    Peng, CK
    A molecular beam epitaxy InAs/InxGa1-xAs (x = 1 --> 0)/AlyGa1-yAs (y = 0 --> 0.3) heterojunction was used as an ohmic contact structure to the GaAs-based pseudomorphic high electron mobility transistors (PHEMTs). This nonalloyed PHEMT had a specific contact resistance r(c) of 1.05 x 10(-7) Omega . cm(2) and an extrinsic transconductance g(me) of 272 mS/mm for devices with 1 mu m gate-length, microwave measurements shelved a current gain cut-off frequency f(t) of 22 GHz and a maximum oscillation frequency f(max) of 43 GHz. These results are comparable to our best conventional PHEMTs' alloyed at 450 degrees C and 2 min duration. Meanwhile, a small-signal equivalent circuit model of the nonalloyed PHEMT has also been demonstrated.
  • Thumbnail Image
    Item type:Item,
    Optical properties of Zn1-xCdxSe epilayers grown on (100)GaAs by molecular beam epitaxy
    (2004-08-01)
    Kuo, MC
    ;
    Chiu, KC
    ;
    Shih, TH
    ;
    Lai, YJ
    ;
    Yang, CS
    Zn1-xCdxSe epilayers were grown on (100) GaAs substrates by molecular beam epitaxy. Lattice constants of the epilayers were measured by (004) rocking curve X-ray diffraction. A full width at half maximum of 475 to 2100 arcsec was obtained. The dependence of the energy gap on temperature, measured by the photoluminescence (PL) spectra, was fitted by Varshni's [Y. P. Varshni: Physica 34 149 (1967)] and O'Donnell's [R. P. O'Donnell and X. Chen: Appl. Phys. Lett. 58 2924 (1991)] models. The fitting parameters beta (161 K to 368K) and (hv) (13 meV to 24 meV), related to phonon energy, were obtained from Varshni and O'Donnell fits, respectively. The activation energies calculated from the integrated PL intensity versus inverse temperature decrease as the Cd content increases. The broadening of the PL linewidth with temperature was fitted by Gamma(T) = Gamma(0) + Gamma(a)T + Gamma(LOI)/[exp(homega(LOI)/kT) - 1] + Gamma(LO2)/[exp(homega(LO2)/kT) - 1] + Gamma(i)exp(-/kT). The impurity binding energy, (E-b), was found to decrease as the Cd composition increases.
  • Thumbnail Image
    Item type:Item,
    Characteristics of nonalloyed pseudomorphic high electron mobility transistors using InAs/InxGa1-xAs (x=-> 0) AlyGa1-yAs (y=0 -> 0.3) contact structures
    (1997-06-01)
    Chen, SS
    ;
    Lin, CC
    ;
    Lan, WH
    ;
    Tu, SL
    ;
    Peng, CK
    A molecular beam epitaxy InAs/InxGa1-xAs (x = 1 --> 0)/AlyGa1-yAs (y = 0 --> 0.3) heterojunction was used as an ohmic contact structure to the GaAs-based pseudomorphic high electron mobility transistors (PHEMTs). This nonalloyed PHEMT had a specific contact resistance r(c) of 1.05 x 10(-7) Omega . cm(2) and an extrinsic transconductance g(me) of 272 mS/mm for devices with 1 mu m gate-length, microwave measurements shelved a current gain cut-off frequency f(t) of 22 GHz and a maximum oscillation frequency f(max) of 43 GHz. These results are comparable to our best conventional PHEMTs' alloyed at 450 degrees C and 2 min duration. Meanwhile, a small-signal equivalent circuit model of the nonalloyed PHEMT has also been demonstrated.