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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Lee, C. P.Subject: search.filters.subject.indium compounds

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Now showing 1 - 3 of 3
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    Characteristics of In(Ga)As quantum ring infrared photodetectors
    (2009-02-01)
    Ling, H. S.
    ;
    Wang, S. Y.
    ;
    Lee, C. P.
    ;
    Lo, M. C.
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    電子工程學系及電子研究所
    Characteristics of In(Ga)As quantum ring infrared photodetectors (QRIPs) were investigated under normal incidence configuration. Compared with quantum dot infrared photodetectors (QDIPs), QRIPs showed wider photocurrent spectra, more stable responsivity with temperature change, and lower dark current activation energy. The wide detection band comes from the transitions from the quantum ring (QR) ground states to different excited states. The shallow confinement states generate higher dark current and enhance the carrier flow between the QRs within the same QR layer. This carrier flow averages out the repulsive potential and makes QRIPs behave similarly to the quantum well infrared photodetectors instead of QDIPs. With an Al(0.27)Ga(0.73)As current blocking layer, the performance of QRIPs was greatly enhanced.
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    Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring
    (2009-05-04)
    Lin, C. H.
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    Lin, H. S.
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    Huang, C. C.
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    Su, S. K.
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    Lin, S. D.
    We present detailed experimental results of the temperature dependence of continuous wave and time-resolved photoluminescence (PL) spectroscopy in self-assembled InAs/GaAs quantum dot and quantum ring nanostructures. A dramatic increase in PL decay time of the excited and ground states is observed in InAs quantum rings at high temperature. We speculate that the longer PL lifetime in quantum rings is due to the interplay among the dark states, ground states, and the reduced wave function overlapping between electrons and holes. A rate equation model is proposed to interpret the observed temperature dependence of the ground state exciton lifetime.
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    Shape dependent carrier dynamics in InAs/GaAs nanostructures
    (2009-12-01)
    Lin, C. H.
    ;
    Ling, H. S.
    ;
    Su, S. K.
    ;
    Lin, S. D.
    ;
    Lee, C. P.
    We present systematic experimental studies of the temperature dependence of continuous wave and time-resolved photoluminescence spectroscopy in self-assembled InAs/GaAs nanostructures as the shape of quantum structures evolved from dot to ring. The carrier dynamics show strong dependence on the geometrical shape of the nanostructures under investigation. An increase in photoluminescence decay time of the excited and ground states is observed as the shape of nanostructures changed from dot, volcano, to ring. It is attributed to the carrier thermalization between the dark and ground states. The photoluminescence excitation spectra of the quantum rings reveal resonances related to the dark states. A rate equation model is proposed to interpret the observed carrier dynamics.