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Author: search.filters.author.Lee, CPSubject: search.filters.subject.quantum dots

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    Photoluminescence study of high-quality InGaAs/GaAs quantum dots on (111)B GaAs substrates
    (1999-01-01)
    Tsai, FY
    ;
    Lee, CP
    ;
    電子工程學系及電子研究所
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    Department of Electronics Engineering and Institute of Electronics
    We present a simple in situ method to fabricate high-quality InGaAs/GaAs quantum dots on (111)B GaAs substrates. The mechanism of the quantum dot formation is not strain relaxation but the growth characteristic of (111)B GaAs under low substrate temperatures. When the growth is performed at low temperatures, the layer-by-layer growth mode is replaced by island growth and therefore quantum dots are formed. The formation of the quantum dots was verified by atomic force microscope (AFM) images and the shift of photoluminescence (PL). The PL emission from the quantum dots was very strong and the full-width at half-maximum (FWHM) of the emission peak was as small as 7.7 meV, indicating excellent quality and very uniform dot formation. The effect of nominal thickness on the quantum dot formation has been investigated.
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    Spin-orbit interaction and energy states in semiconductor quantum dots
    (2001-05-01)
    Voskoboynikov, O
    ;
    Lee, CP
    ;
    Tretyak, O
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    We present a theoretical study of the impact of the spin-orbit interaction on electron energy states in small cylindrical quantum dots. In our calculations, we use the effective one electronic band Hamiltonian and the spin dependent boundary conditions. It has been found that the spin-orbit interaction can modify the energy spectrum of narrow gap semiconductor quantum dots. The modification consists of the energy state spin splitting that strongly depends on the dot size. The spin splitting demonstrates a non-monotonic dependence on the dot size and can provide a situation when only the lower spin split states with angular quantum number l =1 are bound in the dot. (C) 2001 Elsevier Science B.V. All rights reserved.
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    Spin-dependent electron scattering from quantum dots and antidots in two-dimensional channels
    (2002-01-01)
    Voskoboynikov, O
    ;
    Huang, HC
    ;
    Lee, CP
    ;
    Tretyak, O
    ;
    電子工程學系及電子研究所
    Electron elastic scattering from two-dimensional circular quantum dots (antidots) when the spin-orbit interaction plays an important role is studied theoretically. The investigation is based on the effective one electronic band Hamiltonian and the spin-dependent boundary conditions. It was found a large left-right spin-dependent asymmetry in the scattering cross section for two-dimensional electrons. In a case of GaAs InAs antidots the asymmetry reaches similar to 10% for back-scattered electrons. (C) 2002 Elsevier Science B.V. All rights reserved.
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    Effect of shape and size on electron transition energies of InAs semiconductor quantum dots
    (2002-04-01)
    Li, YM
    ;
    Voskoboynikov, O
    ;
    Lee, CP
    ;
    Sze, SM
    ;
    Tretyak, O
    We present a theoretical study of the electron energy states in three-dimensional narrow gap semiconductor quantum (Jots with different shapes under an external magnetic field. The problem is solved by using the effective one-electronic-band Hamiltonian, the energy- and position-dependent electron effective mass approximation and the Ben Daniel-Duke boundary condition. We investigate small InAs/GaAs quantum dots with disk, lenticular, and conical shapes. Electron energy dependence on volume is expressed as V-gamma where the exponent gamma depends on the dot shapes and can vary over a wide range. The most stable against the dot size deviations (among dots of the same base radius) is the energy spectra of the conical dots. In addition, this type of dot also has the weakest diamagnetic shift. Contrarily, quantum dots with cylindrical shapes show a wide deviation in energy and a relatively strong diamagnetic shift.
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    Ion-channeling studies of InAs/GaAs quantum dots
    (2005-12-01)
    Niu, H
    ;
    Chen, CH
    ;
    Wang, HY
    ;
    Wu, SC
    ;
    Lee, CP
    Determination of the strains in and around the quantum dots is important both to assess the results of the epitaxially grown thin film and to explain the optical performance of quantum dots samples. A series of InAs/GaAs quantum dots samples were fabricated by MBE in Stranski-Krastanov growth mode. The preliminary results of ion-channeling observations along < 001 > growth direction and < 011 > direction will be presented and discussed briefly. (c) 2005 Elsevier B.V. All rights reserved.