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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Lee, CSSubject: search.filters.subject.Schottky

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Now showing 1 - 3 of 3
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    Study of titanium tungsten nitride and tungsten nitride Schottky contacts on n-GaN
    (2003-07-01)
    Lee, CS
    ;
    Chang, EY
    ;
    Chang, L
    ;
    Fang, CY
    ;
    Huang, YL
    The Schottky diode behaviors of the TiWNx and the WNx Schottky contacts to n-GaN were investigated at different annealing temperatures. Both TiWNx and WNx films were deposited by the reactive DC sputtering method. The WNx/n-GaN contact exhibited excellent electrical characteristics even after rapid-thermal annealing up to 850degreesC for 10s. The ideality factor and barrier height remained 1.09 and 0.8OeV, respectively, after 850degreesC annealing. However, the TiWNx/n-GaN contact was thermally stable only up to 650degreesC annealing; the values of the ideality factor and the barrier height were 1.14 and 0.76 eV, respectively, after 650degreesC annealing and started to degrade when annealed at higher temperatures. The deterioration of the TiWNx/n-GaN contact at higher temperatures was due to the inter-diffusion of the TiWN film and the GaN material.
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    Item type:Item,
    Study of Ti/W/Cu, Ti/Co/Cu, and Ti/Mo/Cu multilayer structures as Schottky metals for GaAs diodes
    (2004-07-01)
    Chang, HC
    ;
    Lee, CS
    ;
    Chen, SH
    ;
    Chang, EY
    ;
    He, J
    Schottky structures with copper and refractory metals as diffusion barrier for GaAs Schottky diodes were evaluated. These structures have lower series resistances than the conventionally used Ti/Pt/Au structure. Based on the electrical and material characteristics, the Ti/W/Cu and Ti/Mo/Cu Schottky structures are thermally stable up to 400degreesC; the Ti/Co/Cu Schottky structure is thermally stable up to 300degreesC. Overall, the copper-metallized Schottky structures have excellent electrical characteristics and thermal stability, and can be used as the Schottky metals for GaAs devices.
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    AIGaN Schottky characteristics after hybrid photo-enhanced wet and inductively coupled plasma etch
    (2001)
    Huang, WJ
    ;
    Fang, CY
    ;
    Wong, JS
    ;
    Lee, CS
    ;
    Chang, EY
    AlGaN Schottky contact characteristics after hybrid photo-enhanced wet etch and Inductively coupled plasma etch (ICP) is studied. AlGaN was grown by MOCVD on sapphire substrate. KOH solution and 100mW/cm(2) UV illumination by Hg are lamp was used for photo-enhanced wet etch. Gas mixture of Cl-2 and N-2 was used for ICP etch. The Schottky metal used in this study is Ni/Au (100nm/100nm) and the Ohmic metal used is Al (100nm). Typical etch rates are 0.28nm/min and 265nm/min with a roughness of 0.6nm and 1.17nm for wet and dry etch respectively. The ICP process etches more rapidly but the etched surfaces are rougher when compared to the wet-etch process. After ICP etch at 600 watt for 60sec, the schottky diode has an ideality factor n=2.6, and the barrier height phi(B)=0.65 eV However, for the ICP etched sample followed by photo-enhanced wet chemical etch for 30mins, the sample has an ideality factor n=0.99, and the barrier height phi(B)=0.86 eV, and the breakdown voltage is recovered from 4V to 7.5V The study indicates that the wet chemical etch can remove the damage caused by ICP etching. Overall, the hybrid dry/wet etch process is a high etch rate process and cause very low damages on the etched surface.