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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Lee, HYSubject: search.filters.subject.X-ray scattering

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    X-ray scattering study of crystallization behavior in homoepitaxial growth of SrTiO3 films
    (2002-10-15)
    Lee, HY
    ;
    Chang, WD
    ;
    Hsu, CH
    ;
    Liang, KS
    ;
    Lee, JY
    X-ray reflectivity and grazing incidence crystal truncation rod (CTR) measurements were employed to characterize the microstructure and crystallization behavior of homoepitaxial SrTiO3 (STO) films deposited on polished SrTiO3 (0 0 1) substrates by pulse laser deposition technique. X-ray scattering results indicate that room temperature grown STO film has a density approximately 11.1% lower than that of bulk STO and shows poor epitaxial relation with the substrate. Subsequent annealing at 760 degreesC for 20 s appeared to transform the film into two-layer structure, with the density of the layer right above the substrate approaching to its bulk value, while the density of the top 15.5 Angstrom thick layer reducing to near 45% of bulk STO. The annealing process also leads to an increase of lateral lattice constant together with the growth of domain size. The appearance of interference fringes of the CTR after annealing, which is also observed at the film grown at 760 degreesC, clearly demonstrates the development of epitaxy upon short time annealing. (C) 2002 Elsevier Science B.V. All rights reserved.
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    Composition determination of semiconductor quantum wires by X-ray scattering
    (2005-02-28)
    Hsu, CH
    ;
    Tang, MT
    ;
    Lee, HY
    ;
    Huang, CM
    ;
    Liang, KS
    Self-assembled semiconductor nano-structures, e.g. quantum dots and wires, have recently attracted intensive interests due to their potential applications in optoelectronic industry. Strain field, compositional profile, size, and shape are the key factors determining the physical properties of these nano-structures. However, due to their mesoscopic size, it is a challenge to accurately determine those geometric and chemical parameters. In this work, we present the structural and compositional investigation of GaAs quantum wires grown on InP(0 0 1) substrates by grazing incidence X-ray scattering. In particular, we applied resonant X-ray scattering to determine the compositional distribution within the wires. With properly chosen diffraction peak and X-ray energy range, the profile of energy scan is highly sensitive to the composition of the region with selected lattice constant. As compared to other composition determination methods, which rely on the intensity ratio either between a strong and a weak diffraction or between the same Bragg diffraction collected at different energies, the profile of energy scan is not affected by the significant intensity modulation introduced by inter-wire correlation. Therefore, this method can be applied to systems of various surface morphologies and ordered structures and still provides compositional information with high accuracy and good resolution. (C) 2004 Elsevier B.V. All rights reserved.