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Author: search.filters.author.Lee, Hsin-YiSubject: search.filters.subject.X-ray scattering

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    In situ Al-doped ZnO films by atomic layer deposition with an interrupted flow
    (2015-09-01)
    Huang, Jheng-Ming
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    Ku, Ching-Shun
    ;
    Lin, Chih-Ming
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    Chen, San-Yuan
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    Lee, Hsin-Yi
    In situ aluminum-doped ZnO (AZO) films were grown on glass substrates by atomic layer deposition (AID) with an interrupted flow at temperatures in range 200-280 degrees C; the optimal temperature, 260 degrees C, depended on the electrical properties. To assess the effect of the ratio of pulses of diethylzinc (DEZn) and trimethylaluminium (TMA) on the structural, optical and electrical properties, we grew AZO films with various pulse ratios of DEZn:TMA in a range from 3:1 to 10:1 at 260 degrees C. These properties and the content of Al were investigated with X-ray diffraction, X-ray reflectivity (XRR), a high-resolution transmission electron microscope (HRTEM), a secondary-ion mass spectrometer (SIMS), transmission spectra, Hall measurements and X-ray photoelectron spectra (XPS). The electrical resistivity was least, 5.7 x 10(-4) Omega cm, for ALD-AZO films with pulse ratio 6:1; the carrier mobility was 8.80 cm(2) V-1 s(-1) and optical transmittance up to 94%. The epitaxial AZO films grown in situ also on m-plane sapphire exhibited the two-fold symmetry of ZnO (110) in the orthorhombic crystal system. All results show that a novel in situ doping method with an interrupted flow controls the Al content of AZO films more easily, and is more usefully applicable for a structure with a large aspect ratio for an advanced photoelectric device. (C) 2015 Elsevier B.V. All rights reserved.
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    Fabrication and ferroelectric properties of BiFeO3/LaNiO3 artificial superlattice structures grown by radio-frequency magnetron-sputtering
    (2013-02-01)
    Liu, Yen-Ting
    ;
    Chiu, Shang-Jui
    ;
    Lee, Hsin-Yi
    ;
    Chen, San-Yuan
    ;
    材料科學與工程學系
    Symmetric superlattice structures of multiferroic BiFeO3 and conductive LaNiO3 sublayers were grown on a Nb-doped SrTiO3 substrate with radio-frequency magnetron-sputtering. The formation of a superlattice structure was confirmed from the appearance of satellite lines on both sides of the main line in the X-ray diffraction pattern. X-ray measurements show that these superlattice films become subject to greater tensile stress along the c-axis and to increased compressive stress parallel to the surface plane with a decreasing thickness of the sublayer. The smaller is the thickness of the sublayer, the greater is the crystalline quality and the strain state. The hysteresis loops show a large leakage current at frequencies of 0.5 and 1 kHz; the polarization decreases with an increasing frequency. (C) 2012 Elsevier B.V. All rights reserved.