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Author: search.filters.author.Lee, MCSubject: search.filters.subject.GaN

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Now showing 1 - 6 of 6
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    Long-term photocapacitance decay behavior in undoped GaN
    (2001-10-01)
    Chung, HM
    ;
    Pan, YC
    ;
    Chuang, WC
    ;
    Chen, NC
    ;
    Tsai, CC
    We have measured the dynamic response of the photocapacitance of a Schottky diode made of an undoped GaN epilayer grown by metalorganic vapor phase epitaxy. The measurements were performed after the suspension of a white light for a specified "waiting" time, t. The results indicate that the capacitance exhibits a logarithmic function of t from which a time constant of approximately 34.5 s and a cross-sectional area of less than 2.89 x 10(-27) cm(2) were retrieved. These are interpreted as the characteristic time and the cross-sectional area of electron capture by the traps associated with dislocations formed in the epifilm, respectively.
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    Growth temperature reduction for isoelectronic As-doped GaN
    (2003-03-01)
    Lee, WH
    ;
    Huang, HY
    ;
    Chen, WC
    ;
    Lee, CF
    ;
    Chen, WK
    As-doped GaN films were grown at different temperatures by atmospheric metalorganic chemical vapor deposition. A higher electron Hall mobility, narrower line width in photoluminescence, and longer spatial correlation length of the filmes were obtainable at low growth temperatures compared to undoped GaN grown at the same temperatures as a result of isoelectronic As-doping.
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    The electronic structure and optical properties of phosphorus implanted GaN films
    (2000)
    Shu, CK
    ;
    Lee, WH
    ;
    Huang, HY
    ;
    Chuang, CH
    ;
    Chen, WK
    We have studied optical and electronicc transition properties of GaN layers grown by MOCVD which are implanted by isoelectronic impurities of phosphorus (P). The P-implanted samples were treated by rapid thermal annealing to recover implantation-induced damages. A strong emission band around 430 nm were observed in P-implanted sample due to the recombination of bound exciton to P-hole isoelectronic traps. From the Arrhenius plot, the hole binding energy about 180 meV localized at the P-isoelectronic trap and the exciton localization energy of 28 meV were obtained. According to first-principle total-energy calculations, we suggest that the implantation likely induces N-I or P-related defects. From the PLE, we found that the absorption by band-to-band and shallow donors dominates the yellow luminescence (YL) and the implantation of P has induced localized states that not only increase the YL but also suppress the transition from the free electron-hole pairs to the deep-levels.
  • Thumbnail Image
    Item type:Item,
    Long-term photocapacitance decay behavior in undoped GaN
    (2000)
    Chung, HM
    ;
    Pan, YC
    ;
    Chung, WC
    ;
    Chen, NC
    ;
    Tsai, CC
    We have employed the photocapacitance measurement to examine the physical properties of GaN Schottky diode made from the undoped epilayer grown by metalorganic vapor phase epitaxy. The resulted transient capacitance spectrum shows that the diode exhibits a characteristic of long-term logarithmic-type decaying behavior, which, we believe, is correlated closely to the linear arranged traps close to the core of the threading edge dislocations.
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    Effects in carrier dynamics of Isolectronic In doped in GaN films grown by metalorganic vapor phase epitaxy
    (2000)
    Huang, HY
    ;
    Shu, CK
    ;
    Lin, WC
    ;
    Liao, KC
    ;
    Chuang, CH
    Time-resolved photoluminescence spectra were used to characterize isoelectronically doped GaN:In films. Our results indicate that the recombination lifetime of donor-bound-exciton transition of pure GaN exhibits strong dependence on temperature. When In is doped into GaN, the recombination lifetime decreases sharply from 68 ps to 30 ps, irregardless of measured temperature and In doping concentration. The cause for this appearance is not clear at present. It might be related to the isoelectronic In impurity itself in GaN, which creates shallow energy levels that predominate the recombination process.
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    Crystalline structure changes in GaN films grown at different temperatures
    (1997-05-15)
    Lin, HC
    ;
    Ou, J
    ;
    Chen, WK
    ;
    Chen, WH
    ;
    Lee, MC
    Thin GaN films were grown on (0001) sapphire at various temperatures between 520 and 1050 degrees C using metalorganic chemical vapor deposition (MOCVD). Optical properties and crystalline structures of the films were investigated by means of photoluminescence, Raman scattering, and X-ray diffraction. A noticeable structure transition occurred at around 750 degrees C with higher growth temperatures favoring the hexagonal structure and lower ones the cubic. Defect formation was also seen to be temperature dependent. The yellow luminescence which was clearly observed in our 700-850 degrees C films was attributable to the cubic and hexagonal structure mixing. The drastic reduction of yellow luminescence and the substantial enhancement of near band edge emission in the 950-1050 degrees C films indicated that this temperature range is optimum for growing high quality wurtzite films.