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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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1997 - 19994

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Author: search.filters.author.Lee, MCSubject: search.filters.subject.InN

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Now showing 1 - 4 of 4
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    Growth and X-ray characterization of an InN film on sapphire prepared by metalorganic vapor phase epitaxy
    (1997-12-15)
    Chen, WK
    ;
    Pan, YC
    ;
    Lin, HC
    ;
    Ou, J
    ;
    Chen, WH
    We report the successful growth of an InN film by metalorganic vapor phase epitaxy. The film quality is found to be strongly dependent on the growth temperature and the TMIn reactant flow rate. The best quality epilayer was obtained at 375 degrees C under a high V/III ratio growth environment. It exhibits a FWHM of the X-ray rocking curve as narrow as 96 arcsec: which explains the superior crystalline quality of our epitaxial film.
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    Item type:Item,
    Raman and X-ray studies of InN films grown at different temperatures by metalorganic vapor phase epitaxy
    (1998-09-01)
    Chen, WK
    ;
    Lin, HC
    ;
    Pan, YC
    ;
    Ou, J
    ;
    Shu, CK
    We used Raman scattering and X-ray diffraction (XRD) methods to investigate the properties of InN films deposited at temperatures ranging from 325 to 600 degrees C by metalorganic vapor phase epitaxy (MOVPE). Significant line broadening, softening and intensity evolution were observed from films at growth temperatures between 375 and 450 degrees C. This can be attributed to the formation of mixed hexagonal and cubic structures and related dislocation defects. As the growth temperature was further increased, the hexagonal phase tvas found to be dominant in the deposited InN film.
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    Item type:Item,
    Influence of sapphire nitridation on properties of indium nitride prepared by metalorganic vapor phase epitaxy
    (1999-02-01)
    Pan, YC
    ;
    Lee, WH
    ;
    Shu, CK
    ;
    Lin, HC
    ;
    Chiang, CI
    Indium nitride films have been successfully grown on (0001) sapphire substrates by metalorganic vapor phase epitaxy (MOVPE) using TMIn and NH3 as source precursors. Experimental results indicated that pregrowth treatments, such as buffer layer growth, nitridation temperature and nitridation duration have dramatic effects on the growth of the InN films. For films nitridated at 1,000 degrees C for 40 min without any buffer layer growth, we obtained an InN film quality with Hall mobility, carrier concentration and line width of Raman E-2 mode of 270 cm(2)/V.s, 5 x 10(19) cm(-3) and 4.5 cm(-1), respectively, which is among the best quality ever reported for such type of film grown by MOVPE.
  • Thumbnail Image
    Item type:Item,
    Growth and X-ray characterization of an InN film on sapphire prepared by metalorganic vapor phase epitaxy
    (1997-12-15)
    Chen, WK
    ;
    Pan, YC
    ;
    Lin, HC
    ;
    Ou, J
    ;
    Chen, WH
    We report the successful growth of an InN film by metalorganic vapor phase epitaxy. The film quality is found to be strongly dependent on the growth temperature and the TMIn reactant flow rate. The best quality epilayer was obtained at 375 degrees C under a high V/III ratio growth environment. It exhibits a FWHM of the X-ray rocking curve as narrow as 96 arcsec: which explains the superior crystalline quality of our epitaxial film.