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Author: search.filters.author.Lee, MCSubject: search.filters.subject.luminescence

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    Optical and electrical investigations of isoelectronic In-doped GaN films
    (2000)
    Shu, CK
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    Lee, WH
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    Pan, YC
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    Chen, CC
    ;
    Lin, HC
    The optical and electrical properties of isoelectronic In-doped GaN films grown by metalorganic vapor phase epitaxy (MOVPE) were investigated by X-ray, photoluminescence (PL), Hall and Raman measurements. As a result, adequate In-doping quantity causes not only a reduction of yellow luminescence and unintentional background concentration, but an enhanced mobility and decrease in the widths. The improved crystalline and optical qualities of GaN films may be attributed to the decrease in defects. (C) 2000 Elsevier Science Ltd. All rights reserved.
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    Luminescence intensity reduction in Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy
    (2001-04-01)
    Shu, CK
    ;
    Chen, HH
    ;
    Lee, WH
    ;
    Pan, YC
    ;
    Huang, HY
    Photoluminescence dynamic responses of a heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy have been investigated. As the probe power density increased from 2.5 to 925 W/cm(2), a Mg-related emission band shifted from 2.82 to 3.16 eV revealing characteristics of donor-acceptor pair recombination. The intensity evolution also showed slow decay that suggests the metastable emission behavior. A simple potential barrier model was proposed to occur between the Mg related deep levels and common Mg acceptor level, which impedes electron relaxation and thus slows down the luminescence decay. From the variation of decay time constant with temperature. a barrier energy was deduced to be about 69 meV which is very close to the electrical result of 68 meV.
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    Photoluminescence studies of In-doped GaN : Mg films
    (2005-10-01)
    Chang, FC
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    Chou, WC
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    Chen, WH
    ;
    Lee, MC
    ;
    Chen, WK
    Photoluminescence (PL) studies of In-doped GaN:Mg films revealed that the Mg-related emission at 3.1 eV is enhanced by more than one order of magnitude on the shoulder of the broad band centered at 2.8eV for GaN:Mg after an optimal In concentration was added into the films. This enhancement of the 3.1 eV band is believed to be associated with the reduction in the number of self-compensation centers. A slow decay in PL intensity evolution was also observed, which may be ascribed to a local energy barrier that impedes carriers that relax into the valence band. The temperature dependences of the decay time constants were measured and a barrier energy as high as similar to 103 +/- 7 meV was obtained for In-doped GaN:Mg as compared with 69 8 meV for GaN:Mg.