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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Lee, P. T.Has files: No

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Now showing 1 - 5 of 5
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    Item type:Item,
    Flat band voltage control on low V-t metal-gate/high-kappa CMOSFETs with small EOT
    (2009-07-01)
    Chin, Albert
    ;
    Chang, M. F.
    ;
    Lin, S. H.
    ;
    Chen, W. B.
    ;
    Lee, P. T.
    The unwanted high threshold voltage (V-t) is the major challenge for metal-gate/high-kappa CMOs especially at small equivalent-oxide-thickness (EOT). We have investigated the high V-t issue that is due to flat-band voltage (V-fb) roll-off at smaller EOT. A mechanism of charged oxygen vacancies formed by interface reaction was proposed to explain the V-fb roll-off effect. This interface reaction can be decreased by inserting a thin interfacial SiON and using novel low temperature process. The self-aligned and gate-first metal-gate/high-kappa CMCSFETs using these methods have achieved low V-t and good control of V-fb roll-off at small 0.6-1.2 nm EOT. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved,
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    Item type:Item,
    Tunable nanoblock lasers and stretching sensors
    (2016)
    Lu, T. W.
    ;
    Wang, C.
    ;
    Hsiao, C. F.
    ;
    Lee, P. T.
    ;
    光電工程學系
    Reconfigurable, reliable, and robust nanolasers with wavelengths tunable in the telecommunication bands are currently being sought after for use as flexible light sources in photonic integrated circuits. Here, we propose and demonstrate tunable nanolasers based on 1D nanoblocks embedded within stretchable polydimethylsiloxane. Our lasers show a large wavelength tunability of 7.65 nm per 1% elongation. Moreover, this tunability is reconfigurable and reliable under repeated stretching/relaxation tests. By applying excessive stretching, wide wavelength tuning over a range of 80 nm (spanning the S, C, and L telecommunication bands) is successfully demonstrated. Furthermore, as a stretching sensor, an enhanced wavelength response to elongation of 9.9 nm per % is obtained via the signal differential from two nanoblock lasers positioned perpendicular to each other. The minimum detectable elongation is as small as 0.056%. Nanoblock lasers can function as reliable tunable light sources in telecommunications and highly sensitive on-chip structural deformation sensors.
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    Item type:Item,
    Hybrid White Light-emitting Diodes by Organic-Inorganic materials
    (2015)
    Chen, K. J.
    ;
    Lai, Y. C.
    ;
    Lin, B. C.
    ;
    Lin, C. C.
    ;
    Chiu, S. H.
    This study demonstrated the high uniformity hybrid white light-emitting didoes with polyfluoren (PFO) polymer and quantum dot (QD) with different CCT range from 3000K to 9000K.
  • Thumbnail Image
    Item type:Item,
    Flat band voltage control on low V(t) metal-gate/high-kappa CMOSFETs with small EOT
    (2009-07-01)
    Chin, Albert
    ;
    Chang, M. F.
    ;
    Lin, S. H.
    ;
    Chen, W. B.
    ;
    Lee, P. T.
    The unwanted high threshold voltage (V(t)) is the major challenge for metal-gate/high-kappa CMOs especially at small equivalent-oxide-thickness (EOT). We have investigated the high V(t) issue that is due to flat-band voltage (V(fb)) roll-off at smaller EOT. A mechanism of charged oxygen vacancies formed by interface reaction was proposed to explain the V(fb) roll-off effect. This interface reaction can be decreased by inserting a thin interfacial SiON and using novel low temperature process. The self-aligned and gate-first metal-gate/high-kappa CMCSFETs using these methods have achieved low V(t) and good control of V(fb) roll-off at small 0.6-1.2 nm EOT. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved,
  • Thumbnail Image
    Item type:Item,
    Super-high Density Si Quantum Dot Thin Film for Photovoltaic Properties Enhancement
    (2013)
    Kuo, K. Y.
    ;
    Huang, P. R.
    ;
    Chen, Y. J.
    ;
    Lee, P. T.
    ;
    光電工程學系
    A gradient Si-rich oxide multilayer deposition structure is proposed to achieve super-high density Si quantum dot (QD) thin film while preserving QD size control ability for better photovoltaic properties.