<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

Filters

20091

Settings

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Lee, P. T.Subject: search.filters.subject.CMOs

Search Results

Now showing 1 - 1 of 1
  • Thumbnail Image
    Item type:Item,
    Flat band voltage control on low V-t metal-gate/high-kappa CMOSFETs with small EOT
    (2009-07-01)
    Chin, Albert
    ;
    Chang, M. F.
    ;
    Lin, S. H.
    ;
    Chen, W. B.
    ;
    Lee, P. T.
    The unwanted high threshold voltage (V-t) is the major challenge for metal-gate/high-kappa CMOs especially at small equivalent-oxide-thickness (EOT). We have investigated the high V-t issue that is due to flat-band voltage (V-fb) roll-off at smaller EOT. A mechanism of charged oxygen vacancies formed by interface reaction was proposed to explain the V-fb roll-off effect. This interface reaction can be decreased by inserting a thin interfacial SiON and using novel low temperature process. The self-aligned and gate-first metal-gate/high-kappa CMCSFETs using these methods have achieved low V-t and good control of V-fb roll-off at small 0.6-1.2 nm EOT. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved,