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學術出版;;Publications

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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Lei, TFSubject: search.filters.subject.EDTA

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    Novel cleaning solutions for polysilicon film post chemical mechanical polishing
    (2000-07-01)
    Pan, TM
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    Lei, TF
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    Chen, CC
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    Chao, TS
    ;
    Liaw, MC
    Novel cleaning solutions were developed for post-CMP process, surfactant tetra methyl ammonium hydroxide (TMAH) and/or chelating agent ethylene diamine tetra acetic acid (EDTA) were added into the diluted ammonium hydroxide (NH4OH+H2O) alkaline aqueous solution to enhance removal of metallic and organic contamination, From the experimental result, it is found that the particle and metal removal efficiency and the electrical characteristics are significantly improved for post-CMP cleaning.
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    Item type:Item,
    Optimum conditions for novel one-step cleaning method for pre-gate oxide cleaning using robust design methodology
    (2000-10-01)
    Pan, TM
    ;
    Lei, TF
    ;
    Chao, TS
    ;
    Liaw, MC
    ;
    Lu, CP
    A novel one-step cleaning method has been developed for pre-gate-oxide cleaning to replace the conventional RCA two-step cleaning process. Tetramethyl ammonium hydroxide (TMAH) and ethylenediamine tetraacetic acid (EDTA) are added into the RCA SC-1 cleaning solution to enhance cleaning efficiency. We adapt a robust design methodology (Genichi Taguchi method) to analyze the results of our experiments. Using this novel method, it is found that the optimum conditions are A(1)B(2)C(1)D(1) (A(1): TMAH : NH4OH = 1 : 50, B-2: EDTA concentration is 100 ppm, C-1: cleaning time is 5 min, and D-1: cleaning temperature is 60 degreesC). This novel one-step cleaning method is very promising for future large-sized silicon wafer cleaning processes because it has the advantages of reduced processing time and temperature, cost reduction due to reduced chemical usage and improved performance.
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    Item type:Item,
    Comparison of novel cleaning solutions, with various chelating agents for post-CMP cleaning on poly-Si film
    (2001-11-01)
    Pan, TM
    ;
    Lei, TF
    ;
    Ko, FH
    ;
    Chao, TS
    ;
    Chiu, TH
    In this study, various cleaning solutions containing chelating agents with carboxyl acid group (-COOH), such as ethylenediaminetetraacetic acid, citric acid and oxalic acid, were developed for post-poly-Si CMP cleaning. The chelating agent and tetramethylammonium hydroxide (TMAH) were simultaneously added into 2% ammonium hydroxide alkaline solution to promote the removal efficiency on particles and metallic impurities. The effectiveness of various cleaning recipes and their interaction mechanism with poly-Si surface were studied. We could explain the surface behavior of various cleaning solutions by the different molecular size and charge of chelating agents. Based on the mechanism, the behavior of surface particle and metallic impurity can be realized. The co-existence of TMAH with citric acid or oxalic acid in the alkaline cleaning solutions can significantly enhance the electrical property for the capacitor.