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Author: search.filters.author.Lei, TFSubject: search.filters.subject.electrical stress

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Now showing 1 - 3 of 3
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    Item type:Item,
    Mechanism of on-current and off-current instabilities under electrical stress in polycrystalline silicon thin-film transistors
    (2005)
    De Wang, S
    ;
    Chang, TY
    ;
    Lo, WH
    ;
    Lei, TF
    ;
    電子工程學系及電子研究所
    The On-current (I(on)) and Off-current (I(off)) instabilities of polycrystalline silicon thin-film transistors (poly-Si TFTs) were investigated under various electrical stress conditions. The stress-induced device degradation was studied by measuring the dependences of I(on) and I(off) on the drain/gate voltages. Using this technique, dissimilar variations of I(on) and I(off) after stress were observed. The differences can be attributed to the variances in the amount of charges trapped in the gate oxide and the spatial distributions of the trap states generated in the poly-Si channel. These results suggested a comprehensive model for the I(on) and I(off) instabilities of poly-Si TFTs.
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    Item type:Item,
    Drain/gate-voltage-dependent on-current and off-current instabilities in polycrystalline silicon thin-film transistors under electrical stress
    (2005-09-01)
    Wang, SD
    ;
    Chang, TY
    ;
    Lo, WH
    ;
    Sang, JY
    ;
    Lei, TF
    The On-current (I(on)) and Off-current (I(off)) instabilities of polycrystalline silicon thin-film transistors (poly-Si TFTs) were investigated under various stress conditions. The stress-induced device degradation was studied by measuring the dependences Of I(on) and I(off) on the drain/gate voltages. From the results, dissimilar variations in I(on) and I(off) were observed. The differences can be attributed to the variances in the amount of trap charges in the gate oxide and the spatial distributions of the trap states generated in the poly-Si channel. A comprehensive model for the degradation Of I(on) and I(off) in poly-Si TFTs under various electrical stress conditions was suggested.
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    Item type:Item,
    Electrical characteristics and reliability of multi-channel polycrystalline silicon thin-film transistors
    (2006-04-01)
    Shieh, MS
    ;
    Sang, JY
    ;
    Chen, CY
    ;
    Wang, SD
    ;
    Lei, TF
    We demonstrate the fabrication process and the electrical characteristics of n-channel polycrystalline silicon thin-film transistors (poly-Si TFTs) with different numbers of channel stripes.-The device's electrical characteristics, such as on-current, threshold voltage, and subthreshold swing, were improved by increasing the number of channel stripes due to the enhancement of gate control. However, the electric field strength near the drain side was enlarged in multi-channel structures, causing severe impact ionization. The degradation of device's reliability under various electrical stress conditions was suggested.