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Author: search.filters.author.Lei, TFSubject: search.filters.subject.field-induced drain

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    A novel thin-film transistor with self-aligned field induced drain
    (2001-01-01)
    Lin, HC
    ;
    Yu, CM
    ;
    Lin, CY
    ;
    Yeh, KL
    ;
    Huang, TY
    In this letter, a novel thin-film transistor with a self-aligned field-induced-drain (SAFID) structure is reported for the first time. The new SAFID TFT features a self-aligned sidewall spacer located on top of the drain offset region to set its effective length, and a bottom gate (or field plate) situated under the drain offset region to electrically induce the field-induced-drain (FID). So, unlike the conventional off-set-gated TFTs with their effective FID length set by two separate photolithographic masking layers, the new SAFID is totally immune to photomasking misalignment errors, while enjoying the low off-state leakage as well as high turn-on characteristics inherent in the FID structure. Polycrystalline silicon TFTs with the new SAFID structure have been successfully fabricated with significant improvement in the on/off current ratio.
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    Characteristics of polycrystalline silicon thin-film transistors with electrical source/drain extensions induced by a bottom sub-gate
    (2002-05-01)
    Yu, M
    ;
    Lin, HC
    ;
    Chen, GH
    ;
    Huang, TY
    ;
    Lei, TF
    Characteristics of polycrystalline silicon thin-film transistors (TFT) with source/drain extensions induced by a bottom sub-gate were explored, high on/off current ratio up to 10(7) could be achieved for both n- and p-channel devices. Nevertheless, the performance is significantly degraded by a marked increase of off-state leak-age current when the channel length is scaled below 1 mum. Moreover, a hump in the subthreshold current-voltage regime is observed. After careful analysis, it is found that the leakage current is strongly dependent on the field strength and is not a thermally activated process. A leakage path along the bottom interface of the poly-Si channel layer is proposed to explain these results.
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    Item type:Item,
    Self-aligned fabrication of thin-film transistors with field-induced drain
    (2002-08-01)
    Yu, CM
    ;
    Lin, HC
    ;
    Lin, CY
    ;
    Yeh, KL
    ;
    Huang, TY
    Thin-film transistor (TFT) devices with either a top or a bottom sub-gate were fabricated and characterized. The top sub-gate scheme allows the self-aligned formation of main-gate with respect to the sub-gate. On the other hand, the bottom sub-gate scheme features a self-aligned field-induced drain with a sidewall spacer located on its top to set the effective field-induction-drain (FID) length. Unlike the conventional TFTs, the FID serves to distribute the high drain electric field and thereby eliminates gate-induced drain leakage-like off-state leakage current. Superior device performance is realized with the bottom sub-gate structure. (C) 2002 Elsevier Science Ltd. All rights reserved.