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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Li, Chun-HsingSubject: search.filters.subject.interconnect

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Now showing 1 - 5 of 5
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    A Flip-Chip-Assembled W-Band Receiver in 90-nm CMOS and IPD Technologies
    (2019-04-01)
    Li, Chun-Hsing
    ;
    Hsieh, Wan-Ting
    ;
    Chiu, Te-Yen
    ;
    交大名義發表
    ;
    National Chiao Tung University
    A flip-chip-assembled W-band receiver composed of a 90-nm CMOS chip and an integrated-passive-device (IPD) carrier is presented in this paper. The chip which integrates a low-noise amplifier, a single-sideband mixer, a frequency doubler (FD), and a wide-band variable-gain amplifier, is flip-chip packaged to the IPD carrier through a low-loss interconnect. The simulated loss of the interconnect without any compensation network is only 0.95 dB at 94 GHz. The FD can provide differential output without any additional lossy balun required, effectively increasing the FD output power, and hence relaxing the local oscillator generation circuit design. The experimental results show that the proposed packaged receiver can provide a variable gain from 11.3 to 48.2 dB, while having an input 1-dB compression point from -43.7 to -29 dBm as the RF frequency is 90 GHz. The intermediate bandwidth and minimum noise figure can be 1.0 GHz and 7.8 dB, respectively. The proposed receiver only consumes 73.9 mW from a 1.2-V supply. As compared with prior works, the proposed receiver exhibits higher gain, lower noise, and lower power dissipation even though a less-advanced 90-nm CMOS technology is adopted. To the best of the authors' knowledge, this is the first W-band CMOS receiver assembled on an IPD carrier reported thus far.
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    A Low-Cost Broadband Bondwire Interconnect for Heterogeneous System Integration
    (2013)
    Li, Chun-Hsing
    ;
    Ko, Chun-Lin
    ;
    Kuo, Chien-Nan
    ;
    Kuo, Ming-Ching
    ;
    Chang, Da-Chiang
    A low-cost broadband interconnect, composed of bondwires and transmission lines, is proposed for heterogeneous system integration. By designing the length and the characteristic impedance of the transmission lines, the bondwire effect can be reduced to provide an interconnect with good return loss and low insertion loss. In this work, the chip and the carrier are realized in 90-nm CMOS and GIPD process, respectively. Measured results show that the return loss and the insertion loss are better than 10 dB and 1.1 dB, respectively, from DC to 45.2 GHz.
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    A Broadband Interconnect for THz Heterogeneous System Integration
    (2013)
    Li, Chun-Hsing
    ;
    Wu, Jan-Jr
    ;
    Kuo, Chien-Nan
    ;
    Cheng, Yu-Ting
    ;
    Kuo, Ming-Ching
    A broadband interconnect for THz heterogeneous system integration is proposed using a resonator coupling technique. Two resonators, deployed on a chip and a carrier, respectively, are coupled through the electromagnetic field to provide a low-loss interconnect in a broadband manner. Simulation results indicate an insertion loss of 0.32 dB at 170 GHz while covering 3-dB bandwidth from 100 to 344 GHz. Measurement can be conducted to verify its performance only from 140 GHz to 220 GHz, due to equipment limit. The measured minimum insertion loss is 0.47 dB at 164 GHz.
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    A Low-Cost Broadband Bondwire Interconnect for THz Heterogeneous System Integration
    (2015)
    Li, Chun-Hsing
    ;
    Lai, Chih-Wei
    ;
    Yan, Tzu-Chao
    ;
    Kuo, Chien-Nan
    ;
    電機工程學系
    A low-cost broadband bondwire interconnect is proposed for THz heterogeneous system integration. A transversal path composed of two transmission lines and a bondwire is introduced to effectively reduce the bondwire effect of an original signal path consisted of a single bondwire only. Simulation results indicate that the return loss and insertion loss can be better than 15 dB and 2.3 dB from dc to 456 GHz, respectively. Measured interconnect loss is around 0 dB to 1.5 dB from 320 to 340 GHz.
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    A Low-Cost DC-to-84-GHz Broadband Bondwire Interconnect for SoP Heterogeneous System Integration
    (2013-12-01)
    Li, Chun-Hsing
    ;
    Ko, Chun-Lin
    ;
    Kuo, Chien-Nan
    ;
    Kuo, Ming-Ching
    ;
    Chang, Da-Chiang
    A low-cost broadband bondwire interconnect is proposed for heterogeneous system integration. Transmission lines are incorporated with bondwires to form a two-path structure, which can effectively reduce the bondwire effect. Theoretical analysis is provided using a graphical method and it shows that the interconnect can give widest operation bandwidth from dc up to a maximum frequency f(max) if the length of the transmission lines is designed at an optimal electrical length theta(max) . In particular, theta(max) only depends on the characteristic impedance of the transmission lines. The achievable f(max) is limited by the bondwire inductance, i.e., smaller bondwire inductance is preferred to have wider operation bandwidth. An interconnect from a 0.18-mu m CMOS chip to a glass-integrated-passive-device carrier is designed to verify the proposed concept. Measured results show that the insertion loss and the return loss can be better than 3.0 and 13.4 dB, respectively, from dc to 84 GHz. The proposed interconnect shows around 3.2 times bandwidth of a single bondwire alone. To the best of authors' knowledge, this work demonstrates the bondwire interconnect with the widest operation bandwidth for heterogeneous system integration by using system-on-package reported thus far.