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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Li, YMSubject: search.filters.subject.electronic structure

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Now showing 1 - 3 of 3
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    Electron energy level calculations for cylindrical narrow gap semiconductor quantum dot
    (2001-11-01)
    Li, YM
    ;
    Liu, JL
    ;
    Voskoboynikov, O
    ;
    Lee, CP
    ;
    Sze, SM
    Three computational techniques are presented for approximation of the ground state energy and wave function of an electron confined by a disk-shaped InAs quantum dot (QD) embedded in GaAs matrix. The problem is treated with the effective one electronic band Hamiltonian, the energy and position dependent electron effective mass approximation, and the Ben-Daniel Duke boundary conditions. To solve the three dimensional (3D) Schrodinger equation, we employ (i) the adiabatic approximation, (ii) the adiabatic approximation with averaging, and (iii) full numerical solution. It is shown that the more efficient approximations (i) and (ii) can only be used for relatively large QD sizes. The full numerical method gives qualitative as well as quantitative trends in electronic properties with various parameters. (C) 2001 Elsevier Science B.V. All rights reserved.
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    A computational method for energy level spin splitting simulation in InAs/GaAs semiconductor quantum dots
    (2002-05-01)
    Li, YM
    ;
    Voskoboynikov, O
    ;
    Lee, CP
    ;
    Sze, SM
    ;
    Tretyak, O
    An impact of the spin-orbit interaction on the electron quantum confinement is considered theoretically for narrow gap semiconductor cylindrical quantum dots. To study the phenomena for InAs quantum dot embedded into GaAs semiconductor matrix, the effective one electronic band Hamiltonian, the energy position dependent electron effective mass approximation, and the spin-dependent Ben Daniel-Duke boundary conditions axe considered, formulated and solved numerically. To solve the nonlinear Schrodinger equation, we propose a nonlinear iterative algorithm. This calculation algorithm not only converges for all simulation cases but also has a good convergent rate. With the developed quantum dot simulator, we study the effect of the spin-orbit interaction for narrow gap InAs/GaAs semiconductor cylindrical quantum dots. From the numerical calculations, it has been observed that the spin-orbit interaction leads to a sizeable spin-splitting of the electron energy states with nonzero angular momentum. Numerical evidence is presented to show the splitting result is strongly dependent on the quantum dot size.
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    An iterative method for single and vertically stacked semiconductor wuantum dots simulation
    (2005-10-01)
    Li, YM
    ;
    電信工程研究所
    ;
    友訊交大聯合研發中心
    ;
    Institute of Communications Engineering
    ;
    D Link NCTU Joint Res Ctr
    We present in this paper a computational effective nonlinear iterative method for calculating the electron energy spectra in single and vertically stacked InAs/GaAs semiconductor quantum dots. The physical model problem is formulated with the effective one electronic band Hamiltonian, the energy- and position-dependent electron effective mass approximation, and the Ben Daniel-Duke boundary conditions. The multishift QR algorithm is implemented in the nonlinear iterative method for solving the corresponding nonlinear eigenvalue problem. This method converges monotonically when solving the nonlinear Schrodinger equation for all quantum dot simulations. Numerical results show that the electron energy spectra are significantly dependent on the number of coupled layers. For the excited states, the layer dependence effect has been found to be weaker than that for the ground state. (c) 2005 Elsevier Ltd. All rights reserved.