<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

Filters

19982

Settings

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Lin, CFSubject: search.filters.subject.device reliability

Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Item type:Item,
    Process optimization of plasma-enhanced chemical vapor deposited passivation thin films for improving nonvolatile memory IC performance
    (1998-12-01)
    Lin, CF
    ;
    Tseng, WT
    ;
    Feng, MS
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    Characteristics of plasma-enhanced chemical vapor deposited (PECVD) SiO2/SiNx passivation layers are modified to improve and optimize electrical performances such as program/erase cycle and hot carrier reliability of floating-gate nonvolatile memory devices. SiH4/N2O gas mixtures are utilized as precursors for oxide CVD process. Higher SiH4/N2O flow rate ratios render the resulting oxide films more silicon-rich, as manifested by their higher refractive index (RI) and wet etch rates. These modifications in film characteristics also correspond to increased program/erase cycles and lower % hot-carrier linear drain current (I-dlin) degradation An increase in RI from 1.520 to 1.675 translates to a rise in program/erase cycles from 17.3 K to 32 K and a fall in I-dlin from 8.2% to 4.9%. Further improvement in device performance is fulfilled by modifying the stoichiometry of the overlying nitride passivation layer. Water diffusion from oxide and hydrogen release from nitride are both responsible for hot carrier drain current degradation and loss in program/erase cycles. The utilization of a high-RI oxide in conjunction with a low hydrogen content nitride would give rise to the optimal device reliability.
  • Thumbnail Image
    Item type:Item,
    Process optimization of plasma-enhanced chemical vapor deposited passivation thin films for improving nonvolatile memory IC performance
    (1998-12-01)
    Lin, CF
    ;
    Tseng, WT
    ;
    Feng, MS
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    Characteristics of plasma-enhanced chemical vapor deposited (PECVD) SiO2/SiNx passivation layers are modified to improve and optimize electrical performances such as program/erase cycle and hot carrier reliability of floating-gate nonvolatile memory devices. SiH4/N2O gas mixtures are utilized as precursors for oxide CVD process. Higher SiH4/N2O flow rate ratios render the resulting oxide films more silicon-rich, as manifested by their higher refractive index (RI) and wet etch rates. These modifications in film characteristics also correspond to increased program/erase cycles and lower % hot-carrier linear drain current (I-dlin) degradation An increase in RI from 1.520 to 1.675 translates to a rise in program/erase cycles from 17.3 K to 32 K and a fall in I-dlin from 8.2% to 4.9%. Further improvement in device performance is fulfilled by modifying the stoichiometry of the overlying nitride passivation layer. Water diffusion from oxide and hydrogen release from nitride are both responsible for hot carrier drain current degradation and loss in program/erase cycles. The utilization of a high-RI oxide in conjunction with a low hydrogen content nitride would give rise to the optimal device reliability.