<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Lin, CHSubject: search.filters.subject.field emission

Search Results

Now showing 1 - 5 of 5
  • Thumbnail Image
    Item type:Item,
    Field emission, structure, cathodoluminescence and formation studies of carbon and Si-C-N nanotubes
    (2002-03-01)
    Chang, HL
    ;
    Lin, CH
    ;
    Kuo, CT
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    Catalyst growth carbon and Si-C-N nanotubes have been synthesized successfully by microwave plasma chemical vapor deposition (MPCVD) method using CH4 + H-2 or CH4 + N-2 as gas sources, Si columns as additional Si solid sources, and Fe, Fe-Y, Co-Ni as catalysts. Nanotubes consisting of Si, C and N were made under process gases of CH4 + N-2, and with or without additional Si columns. Well-aligned and nested nanotubes were observed dependent on the catalyst materials. Besides, Si-C-N nanotubes were observed as bamboo-Eke structure. The as-grown nanotubes were purified in an air furnace to investigate their CL signal shift for potential application involving blue light emission. The field emission results indicate that the emission current densities can be above 10 mA/cm(2) at 10 V/mum, and aligned nanotubes belong to better current stability at a constant electric field than nested nanotubes. Nanotubes with a low I-D/I-G ratio (=0.23) via Raman analysis are achieved. The mechanisms of formation for carbon nanotubes and Si-C-N nanotubes are also discussed. (C) 2002 Elsevier Science B.V. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Growth of the large area horizontally-aligned carbon nanotubes by ECR-CVD
    (2002-12-02)
    Hsu, CM
    ;
    Lin, CH
    ;
    Chang, HL
    ;
    Kuo, CT
    ;
    材料科學與工程學系
    For potential applications of carbon nanotubes (CNTs) as connectors in microelectronic devices, the process to synthesize the large area horizontally-aligned CNTs on 100 mm (4 inch) Si wafers was developed, using electron cyclotron resonance chemical vapor deposition, with CH, and H, as the source gases and Co as the catalyst. The results show that vertical and horizontal CNTs can be obtained by manipulating the electric field applied on the substrate and flow direction of the gases. In the present deposition conditions, the horizontal CNTs show better field emission properties than vertical CNTs. This may be due to the blocking effect of catalysts at the tips and to the diminishment of the effective emission area from defects of vertical CNTs body. (C) 2002 Elsevier Science B.V. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Iron and cobalt silicide catalysts-assisted carbon nanostructures on the patterned Si substrates
    (2002-12-02)
    Chang, HL
    ;
    Lin, CH
    ;
    Kuo, CT
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    Catalyst-assisted carbon nanotubes (CNTs) and carbon nano-rods were synthesized on the patterned or un-patterned Si wafer by microwave plasma chemical vapor deposition, using iron or cobalt silicide catalysts. Controllable carbon nanostructures were achieved by manipulating carbon and nitrogen concentration in the source gases, catalyst materials, and patterned wafer application. CNTs were synthesized under a high ratio of CH4/H-2 = 0.1, while carbon nano-rods were synthesized under a low ratio of CH4/H-2=0.01. Introducing N-2 gas into CH4/H-2 source gases gives rise to bamboo-like CNTs formation. Selective CNTs depositions were applied on (a) parallel Fe-coated line arrays, (b) CoSix-coated hole arrays. This is a novel method that is compatible with Si microelectronic device manufacturing. The field emission results indicate that the emission current density can be above 1 mA/cm(2) at 3.97 V/mum, and hollow like CNTs belong to better emission current than bamboo-like CNTs. Growth models of different carbon nanostructures are proposed. (C) 2002 Elsevier Science B.V. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Comparisons on properties and growth mechanisms of carbon nanotubes fabricated by high-pressure and low-pressure plasma-enhanced chemical vapor deposition
    (2004-11-01)
    Lin, CH
    ;
    Lee, SH
    ;
    Hsu, CM
    ;
    Kuo, CT
    ;
    材料科學與工程學系
    Effects of plasma pressure and the presence of nitrogen on growth of carbon nanotubes (CNTs) and their properties were studied by using microwave plasma chemical vapor deposition (MPCVD) (pressure=600-3300 Pa) and electron cyclotron resonance chemical vapor deposition (ECR-CVD) (pressure=0.3-0.6 Pa) systems. CH4/H-2 and CH4/N-2 were used as source gases, and Co as the catalyst. The structures and properties of CNTs were characterized by using field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), Raman spectra, and field emission I-V measurements. The results show that. CNTs made by higher plasma pressure system have a higher growth rate (typically 1-3 mum/min), smaller tube diameter, better field emission properties, and better tube quality. The growth rate is related to the availability of carbon source. The morphology change from spaghetti-like to well-aligned CNTs is discussed in terms of directed ions. The change in field emission properties is reasoned in terms of geometric enhancement factor and screening effect for different tube morphologies. The presence of nitrogen plasma can have the following effects: increasing tube diameter, increasing straightness of CNTs, forming of bamboo-like CNTs, deterioration of field emission properties, and shifting of Raman peak toward lower-frequency side (or increasing residual tensile stress). (C) 2004 Elsevier B.V. All rigths reserved.
  • Thumbnail Image
    Item type:Item,
    Structure and property features of the catalyst-assisted carbon nanostructures on Si wafer by catalyst ion implantation and ECR-CVD
    (2005-03-01)
    Lin, CC
    ;
    Lo, PY
    ;
    Lin, CH
    ;
    Kuo, CT
    ;
    材料科學與工程學系
    Experiments to examine effects of ion-implanted catalyst on the structure and property features of carbon nanotubes (CNTs) and nanostructures on Si wafer were conducted by electron cyclotron resonance chemical vapor deposition (ECR-CVD) with CH4 and H-2 as source gases, under both ion-implanted and PVD-coated catalysts with different H-plasma pretreatment conditions. The deposited CNTs and substrates at every processing step were characterized by FESEM, TEM, SIMS, XRD and Raman spectroscopy. The results show that the growth mechanism of the CNTs under condition with the ion-implanted catalyst is different from that with the PVD-coated catalyst. It results in a greater hollow size of the tubes for the former condition. Furthermore, under conditions of a higher catalyst dosage and higher H-plasma concentration pretreatment, it indicates better field emission properties, more Co-silicide formation and more percentage of base-growth CNTs due to an increase in the amount of Co source and process temperature. The main effect of the implanted catalyst is essentially to enhance the adhesion strength of CNTs with the substrate through the Co-silicide formation and embedding the catalyst into the substrate, as shown by XRD and SIMS analyses. Additionally, it is also favor to form CNTs with a lower I-D/I-G ratio and so a lower defect density. Under the present conditions, the best field emission properties are: turn-on voltage similar to 6 V/mu m and current density > 0.72 mA/cm(2). In summary, the structure, growth mode, adhesion strength with the substrate, defect density and field emission properties of CNTs can be manipulated by changing the ion-implantation dosages and H-plasma pretreatment conditions, which may not be able to be produced by other methods. (c) 2005 Elsevier B.V. All rights reserved.