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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Lin, CLSubject: search.filters.subject.CVD

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Now showing 1 - 3 of 3
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    Electronic properties of phosphorus-doped triode-type diamond field emission arrays
    (2001-11-01)
    Chen, CF
    ;
    Tsai, CL
    ;
    Lin, CL
    ;
    材料科學與工程學系
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    Department of Materials Science and Engineering
    In this work, we present a novel scheme that involves a new fabrication process of gate structure metal-insulator-semiconductor (MIS) diode using IC technology. We use a bias-assisted microwave plasma chemical vapor deposition (BAMPCVD) system to synthesize P-doped and B-doped diamond. Based on our experimental results, it showed dendrite-like diamond with non-doped and nanotube-like diamond with B- or P- doping. Doping phosphorus or boron can enhance its electric characteristic by reducing the turn-on voltage and enhancing the emission current density. The turn-on voltage of non-doped, B-doped and P-doped is 15, 8 and 5 V, respectively. The field emission current (I-a) of non-doped, B-doped and P-doped is 4 muA (at 45 V), 76 muA (at 77 V) and 322 muA (at 120 V), respectively. (C) 2001 Elsevier Science B.V. All rights reserved.
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    Chemically vapor deposited Cu films on Ar-plasma-treated TiN substrate
    (2002-01-01)
    Lin, CL
    ;
    Chen, PS
    ;
    Chen, MC
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    Chemically vapor deposited (CVD) Cu films on TiN substrates with and without Ar plasma treatment prior to Cu film deposition and the effects of postdeposition thermal annealing were investigated. Cu films deposited on an Ar-plasma-treated TiN substrate have a number of favorable properties over films deposited on a TiN substrate without the plasma treatment. These include a smoother film surface, regular arrangement of Cu grains, and markedly increased ( 111)-preferred orientation. The postdeposition thermal annealing enhanced the (111)-preferred orientation and decreased the resistivity of the as-deposited Cu films. A combined process including Ar plasma substrate treatment prior to Cu film deposition and postdeposition thermal annealing at an appropriate temperature in N-2 ambient is proposed in order to achieve low-resistivity and highly (111)-oriented Cu film deposition. In this way, Cu films with a resistivity of 1.90muOhm.cm and a Cu(111)/Cu(200) peak ratio of 7.08 were obtained.
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    Study of carbon nanoemitters using CO2-CH4 gas mixtures in triode-type field emission arrays
    (2002-03-01)
    Chen, CF
    ;
    Tsai, CL
    ;
    Lin, CL
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    In this study. we used methane/carbon dioxide gas mixtures to deposit nanoemitters on the gate-structured metal-insulator-semiconductor (MIS) diodes. Due to the nanoemitters growing in a high carbon concentration gas source of CH4/CO2, the growth rate is better than conventional mixtures by using hydrocarbons diluted in hydrogen. Moreover, the bias also promotes the growth rate in the CH4/CO2 gas mixtures. In addition, selected area deposition (SAD) of emitters was successfully achieved by using the Pt layer as inhibitor in the bias assisted microwave plasma chemical vapor deposition (BAMPCVD). The field emission. current and the current density of nanoemitters on field emission arrays (FEAs) are 154 LA and 490 mA cm(-2), respectively. This may be due to the following reasons: (I) short gate-emitter spacing; (II) small gate aperture; and (III) emitter with a sharp feature. (C) 2002 Elsevier Science B.V. All rights reserved.