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Low-Power and Highly Reliable Multilevel Operation in ZrO2 1T1R RRAM
(2011-08-01)
Wu, Ming-Chi
;
Lin, Yi-Wei
;
Jang, Wen-Yueh
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
The Ti/ZrO2/Pt resistive memory devices with one transistor and one resistor (1T1R) architecture are successfully fabricated in this letter. The tested devices show low operation current (20 mu A), low switching voltage (set/reset, 0.8/-1 V), and reliable data retention for low-resistance state (LRS) with a 20-mu A set current at 80 degrees C (over ten years) via an excellent current limiter, namely, a metal-oxide-semiconductor field-effect transistor (MOSFET). In addition, multilevel storage characteristics are also demonstrated by modulating the amplitude of the MOSFET gate voltage. The various LRS levels obtained are possibly attributed to the formation of different numbers and sizes of conducting filaments consisting of oxygen vacancies caused by an external electric field. Moreover, reproducible resistive switching characteristics up to 2000 switching cycles are achieved in the same device. Our 1T1R ZrO2-based resistive switching access memory with low-power and highly reliable multilevel operation has high potential for practical applications.
3D resistive RAM cell design for high-density storage class memory-a review
(2016-06)
Hudec, Boris
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Hsu, Chung-Wei
;
Wang, I-Ting
;
Lai, Wei-Li
;
Chang, Che-Chia
In this article, we comprehensively review recent progress in the ReRAM cell technology for 3D integration focusing on a material/device level. First we briefly mention pioneering work on high-density crossbar ReRAM arrays which paved the way to 3D integration. We discuss the two main proposed 3D integration schemes-3D horizontally stacked ReRAM vs 3D Vertical ReRAM and their respective advantages and disadvantages. We follow with the detailed memory cell design on important work in both areas, utilizing either filamentary or interface-limited switching mechanisms. We also discuss our own contributions on HfO2-based filamentary 3D Vertical ReRAM as well as TaOx/TiO2 bilayer-based self-rectifying 3D Vertical ReRAM. Finally, we summarize the present status and provide an outlook for the nearterm future.
Resistive switching mechanisms of V-doped SrZrO3 memory films
(2006-09-01)
Lin, Chun-Chieh
;
Tu, Bing-Chung
;
Lin, Chao-Cheng
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
The resistive switching behaviors of sputtered V-doped SrZrO3 (V:SZO) memory films were investigated in this letter. The current states of the memory films were switched between high current state (H-state) and low current state (L-state). The resistance ratio of the two current states was over 1000 at a read voltage. The switching mechanism from L- to H-state corresponds to the formation of current paths. However, this mechanism from H- to L-state is thought to be due to the fact that the defects present in the V:SZO film randomly trap electrons, and hence, the current paths are ruptured. The conduction mechanism of the H-state is dominated by ohmic conduction, whereas the L-state conduction is dominated by Frenkel-Poole emission. The polarity direction of the resistive switching is an intrinsic property of the SrZrO3 oxides. The V:SZO films with high uniformity and good stability are expected to be used in nonvolatile memory.
Voltage-polarity-independent and high-speed resistive switching properties of v-doped SrZrO3 thin films
(2007-12-01)
Lin, Chun-Chieh
;
Lin, Chih-Yang
;
Lin, Meng-Han
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
In this paper, nonpolar resistive switching behavior is reported for the first time in a SZO-based memory device. The electrode materials used which have different conductivities affect the resistive switching properties of the device. The A1/V:SZO-LNO/Pt device shows nonpolar switching behavior, whereas the A1/V:SZO/LNO device has bipolar switching property. The resistance ratios of these two devices are quite distinct owing to the difference between the resistance of low resistance states. The A1/V:SZO-LNO/Pt device with lower resistive switching voltages (+/- 7 V turn on and 2 V turn off) and higher resistance ratio (10(7)) is more suitable for practical applications compared to the A1/V:SZO/LNO device. The switching speed of the A1/V:SZO-LNO/Pt device is 10 ns, which is the fastest speed that has ever been reported. The conduction mechanisms, nondestructive readout property, retention time, and endurance of this device are also reported in this paper.
Improvement of resistive switching characteristics in SrZrO3 thin films with embedded Cr layer
(2008-10-01)
Lin, Chih-Yang
;
Lin, Meng-Han
;
Wu, Ming-Chi
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
The stabilization of the resistive switching properties is necessary to realize the memory application of the SrZrO3 (SZO)-based resistive switching devices. During continuous resistive switching cycle, broad variations of the resistive switching parameters of the SZO-based memory devices can be improved by a thin embedded Cr layer. The Cr metal layer is proposed to diffuse into and dope the SZO thin film to produce the space charge region, further reducing the effective resistive switching region. Hence, the good stabilization of the resistive switching properties can be obtained in the SZO films with embedded Cr layer.
Resistive switching properties of SrZrO(3)-based memory films
(2007-04-01)
Lin, Chun-Chieh
;
Lin, Chao-Cheng
;
Tu, Bing-Chung
;
Yu, Jung-Sheng
;
Lin, Chen-Hsi
The resistive switching properties of the sputter-deposited SrZrO(3) (SZO) memory films were investigated in this study. The resistive switching behaviors of the SZO film can be improved by doping with vanadium oxide. The conduction mechanisms of the high and low current states of the 0.3% V-doped SZO (V:SZO) film are ohmic conduction and Frenkel-Poole emission, respectively, which implies the bulk effect of the memory film. The resistive ratio of two current states of the 0.3% V:SZO film remains 1000 times after applying 100 voltage sweeping cycles. Furthermore, the 0.3% V:SZO film shows stable resistive switching properties when measurement is performed at 100 degrees C. The band modulation of the SZO/LNO interface is proposed to explain the forming process of the SZO films. The 0.3% V:SZO memory film has excellent properties, such as high stability, good endurance, and long retention time, which make it a good candidate for next-generation nonvolatile memory application.
Stable resistive switching behaviors of sputter deposited V-doped SrZrO3 thin films
(2007-12-03)
Lin, Chun-Chieh
;
Yu, Jung-Sheng
;
Lin, Chih-Yang
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
The influences of doping concentration and element on the resistive switching properties of SZO-based memory devices are investigated in this study. The sputter-deposited LNO bottom electrode and SZO resistive layer exhibit (100)-preferred orientation, and the LNO film annealed at 600 degrees C performs smooth surface and high conductivity. The 0.3% V:SZO memory device depicts the good switching behaviors including high resistance ratio, high endurance, long retention time, and non-destructive readout property. The turn-on voltage is slightly dependent on the SZO thickness, while the turn-off voltage is almost irrelative to the thickness. Besides, the switching properties of MoO3-, MoO2-, and Cr2O3-doped SZO devices are also studied. The results demonstrate that the resistive switching is an intrinsic property of the SZO film, but proper doping concentration and element can improve and stabilize the resistive switching behaviors. (C) 2007 Elsevier B.V. All rights reserved.
Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films
(2007-12-15)
Lin, Chih-Yang
;
Lin, Chun-Chieh
;
Huang, Chun-Hsing
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
Hysteretic I-V characteristics of the SrZrO3 (SZO) thin films with various Mo-doping concentrations were investigated in the study. The 0.2 mol% Mo-doping SZO-based memory device showed excellent resistive switching characteristics, and the resistive switching can be operated over 300 times during successive operation. Both high and low conductive states were stable over 10(4) s. Multi-bit behavior was investigated by dc voltage sweeping with different spans of voltage scan for OFF-process and by various OFF-pulse voltages as well. The endurance test can be over 1000 times with no data loss found. The experimental results showed high potential for nonvolatile memory application. (c) 2007 Published by Elsevier B.V.

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