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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Lin, Chien-ChungSubject: search.filters.subject.light-emitting diodes

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Now showing 1 - 4 of 4
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    The Photothermal Stability Study of Quantum Dots Embedded in Sodium Chlorides
    (2020-01-01)
    Huang, Yu-Ming
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    Hsu, Shun-Chieh
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    Li, Ning
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    Yu, Chung-Ping
    ;
    Ke, Li-Ann
    An efficient and useful method for the incorporation of colloidal quantum dots (QDs) into ionic matrices is demonstrated. We prepared three different synthesis methods, which are traditional saturated-salt water, methanol-assisted, and ethanol-assisted methods. The continuous thermal and photonic stress tests indicate that the high temperature, instead of photonic excitation stress, is more detrimental to the illumination capability of the quantum dots. While the traditional saturated-salt water synthesis and methanol-assisted method are quite effective in low temperature and low photon excitation intensity, the quantum dots sealed by the ethanol-assisted method cannot hold under all conditions. An over-1000-h aging test can provide crucial information for the longevity of these quantum dots, and more than 10,000 h of lifetime can be expected.
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    Luminous efficiency enhancement of white light-emitting diodes by using a hybrid phosphor structure
    (2015-02-19)
    Lin, Bing-Cheng
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    Huang, Jhih-Kai
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    Chen, Kuo-Ju
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    Chiu, Sheng-Huan
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    Tu, Zong-Yi
    This paper presents a "hybrid" structure for the coating of yellow YAG: Ce3(+) phosphor on blue GaN-based light-emitting diodes (LEDs). The luminous efficiency of the hybrid phosphor structure improved by 5.9% and 11.7%, compared with the conventional remote and conformal phosphor structures, respectively, because of the increased intensity of the yellow component. The hybrid structure also has an advantage in the phosphor usage reduction for the LEDs. Furthermore, the electric intensity of the hybrid phosphor structure was calculated for various thicknesses by conducting TFCalc32 simulation, and the enhanced utilization of blue rays was verified. Finally, the experimental results were consistent with the simulation results performed using the Monte-Carlo method. (C) 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
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    Resonant-Enhanced Full-Color Emission of Quantum-Dot-Based Display Technology Using a Pulsed Spray Method
    (2012-12-19)
    Chen, Kuo-Ju
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    Chen, Hsin-Chu
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    Tsai, Kai-An
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    Lin, Chien-Chung
    ;
    Tsai, Hsin-Han
    Colloidal quantum-dot light-emitting diodes (QDLEDs) with the HfO2/SiO2-distributed Bragg reflector (DBR) structure are fabricated using a pulsed spray coating method. Pixelated RGB arrays, 2-in. wafer-scale white light emission, and an integrated small footprint white light device are demonstrated. The experimental results show that the intensity of red, green, and blue (RGB) emission exhibited considerable enhancement because of the high reflectivity in the UV region by the DBR structure, which subsequently increases the use in the UV optical pumping of RGB QDs. A pulsed spray coating method is crucial in providing uniform RGB layers, and the polydimethylsiloxane (PDMS) film is used as the interface layer between each RGB color to avoid cross-contamination and self-assembly of QDs. Furthermore, the chromaticity coordinates of QDLEDs with the DBR structure remain constant under various pumping powers in the large area sample, whereas a larger shift toward high color temperatures is observed in the integrated device. The resulting color gamut of the proposed QDLEDs covers an area 1.2 times larger than that of the NTSC standard, which is favorable for the next generation of high-quality display technology.
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    Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Crown-Shaped Patterned Sapphire Substrates
    (2012-07-15)
    Chiu, Ching-Hsueh
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    Hsu, Lung-Hsing
    ;
    Lee, Chia-Yu
    ;
    Lin, Chien-Chung
    ;
    Lin, Bo-Wen
    In this letter, we report the high performance GaN-based light-emitting diodes (LEDs) with embedded air void array grown by metal-organic chemical vapor deposition. The donut-shaped air void was formed at the interface between crown-shaped patterned sapphire substrates (CPSS) and the GaN epilayer by conventional photolithography. The transmission electron microscopy images demonstrate that the threading dislocations were significantly suppressed by epitaxial lateral overgrowth (ELOG). The Monte Carlo ray-tracing simulation reveals that the light extraction of the air-voids embedded LED was dramatically increased due to a strong light reflection and redirection by the air voids.