<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Lin, Chih-YangSubject: search.filters.subject.RRAM

Search Results

Now showing 1 - 6 of 6
  • Thumbnail Image
    Item type:Item,
    A characteristic improved technique and analysis with plasma treatment to the electrode on oxide-based resistive random access memory
    (2020-03-15)
    Lin, Chih-Yang
    ;
    Chang, Ting-Chang
    ;
    Pan, Chih-Hung
    ;
    Chen, Min-Chen
    ;
    Xu, You-Lin
    A technique was proposed to concentrate the distribution of set voltages. After a plasma treatment, the stability of the high-resistive state (HRS) increased, and the distribution of set voltages was more concentrated at 0.8 V, with a sufficient HRS/LRS resistive ratio (similar to 100x). In addition, the surface of the TiN electrode became rougher, causing oxygen to enter the TiN electrode and form a TiON layer, which acts as an oxygen reservoir. The reservoir is confirmed and the conduction model is supported by both electrical and material analyses. We propose that the observed improvement is due to the difference in the TiN electrode surface. (C) 2019 Published by Elsevier B.V.
  • Thumbnail Image
    Item type:Item,
    Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devices
    (2008-12-25)
    Lin, Chih-Yang
    ;
    Lee, Dai-Ying
    ;
    Wang, Sheng-Yi
    ;
    Lin, Chun-Chieh
    ;
    Tseng, Tseung-Yuen
    Resistive switching characteristics of Pt/Ti/Al2O3/Pt memory devices annealed at various temperatures including 400 degrees C, 500 degrees C and 600 degrees C for 1 h under ambient condition were investigated in the study. The Al2O3 thin films annealed at up to 600 degrees C for 1 h remain amorphous phase based on the X-ray diffraction (XRD) analyses. As increasing annealing temperature, the forming voltage (activating the pristine device) of the memory device decreases in contrast to the rising trend of the turn-on voltage (switching from high to low resistance state). However, the turn-off voltage (switching from low to high resistance state) is almost uninfluenced by thermal annealing. These phenomena might be attributed to the interdiffusion between Ti and Al2O3, based on the analyzed results of secondary ion mass spectroscopy (SIMS) and high resolution transmission electron microscope (HR-TEM). Moreover, the thermal annealing process eventually creates high conducting paths with a high density of oxygen vacancies between the two electrodes. (c) 2008 Elsevier B.V. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Reproducible resistive switching behavior in sputtered CeO2 polycrystalline films
    (2008-12-25)
    Lin, Chih-Yang
    ;
    Lee, Dai-Ying
    ;
    Wang, Sheng-Yi
    ;
    Lin, Chun-Chieh
    ;
    Tseng, Tseung-Yuen
    Sputter-deposited CeO2 film in the metal-insulator-metal structure exhibits repeatable resistive switching behavior under voltage sweep. Based on the X-ray diffraction patterns and the cross-sectional scanning electron microscope image, the CeO2 film is polycrystalline with columnar grains perpendicular to the bottom electrode. Moreover, due to the symmetric device structure of Pt/CeO2/Pt, the resistive switching behavior is independent of bias polarity so that both positive and negative voltages can switch the device from high conducting state (ON-state) into low conducting state (OFF-state) and then back to ON-state, which is named non-polar resistive switching. The resistance ratio between two memory states is about five orders of magnitude, which is stable over 10(4) S at 0.3 V stress. in addition, the resistance ratio decreases with increasing the current compliance during forming process. The stability of ON-state, OFF-state, and as-deposited film state (the state before performing forming process) against temperature is also investigated in this study, showing that the OFF-state is less stable. (C) 2008 Elsevier B.V. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Improved resistive switching properties of Ti/ZrO2/Pt memory devices for RRAM application
    (2011-07-01)
    Wang, Sheng-Yu
    ;
    Tsai, Chen-Han
    ;
    Lee, Dai-Ying
    ;
    Lin, Chih-Yang
    ;
    Lin, Chun-Chieh
    In this study, we have investigated the effect of current compliance during forming process on resistive switching (RS) characteristics of the Ti/ZrO2/Pt device. The higher the current compliance is, the larger RS operation voltage is needed. The Ti/ZrO2/Pt device with high device yield can be operated over 10,000 RS cycles by sweeping dc voltage. and the on and off two memory states exhibit good stability under 0.3 V stress voltage. Moreover, the data retention of both memory states is over 10(5) s. As applying +6-V 10-ns and -3-V 10-ns voltage pulses on the device, there are operation errors observed during continuous write-read-erase-read cycles until increasing the pulse width to 50 ns. Nondestructive readout tests are also performed on the Ti/ZrO2/Pt device before and after 10(3) pulse cycles without any obvious degradation observed. Compared with reported ZrO2-based memory devices, our Ti/ZrO2/Pt device exhibits better RS properties and has a high potential for memory application. (C) 2011 Elsevier B.V. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride-Oxidation on Indium Tin Oxide Electrode by Supercritical CO2 Fluid
    (2015-06-01)
    Chang, Kuan-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Chang, Ting-Chang
    ;
    Zhang, Rui
    ;
    Chen, Kai-Huang
    Supercritical carbon dioxide (SCCO2) fluid technology was applied to indium-tin-oxide (ITO) electrode to improve the resistive switching characteristic of silicon oxide RRAM through hydride oxidation for the first time. We found device power consumption can be effectively reduced so that side effects can be also restricted under device operation. By applying SCCO2 fluid, more oxygen ions will be introduced into the ITO electrode and thus the participation of net oxygen ions in the RRAM redox reaction will increase. Fourier transform spectroscopy and X-ray photoelectron spectroscopy were used to confirm hydride oxidation on ITO electrode. Combined with the current fitting results, we proposed a reaction model to explain the improvement of resistive switching in RRAM by SCCO2 fluids.
  • Thumbnail Image
    Item type:Item,
    Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory
    (2015-06-01)
    Lin, Chih-Yang
    ;
    Chang, Kuan-Chang
    ;
    Chang, Ting-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Pan, Chih-Hung
    We have previously investigated the automatic current compliance property for indium tin oxide (ITO) resistance random access memory (RRAM). Traditionally, for the purpose of protecting RRAM, it is necessary to set equipment current compliance during the set and forming processes of RRAM devices. ITO RRAM devices, however, have an intrinsic capability to limit their current. This letter examines this ITO RRAM current compliance in depth by applying a varied stop-voltage measurement method, where different negative stop voltages were adopted to manipulate oxygen ions. Combined with material analysis and conduction current fitting, a model was established.