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Author: search.filters.author.Lin, Chih-YangSubject: search.filters.subject.resistive switching

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Now showing 1 - 6 of 6
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    Effect of top electrode material on resistive switching properties of ZrO2 film memory devices
    (2007-05-01)
    Lin, Chih-Yang
    ;
    Wu, Chen-Yu
    ;
    Wu, Chung-Yi
    ;
    Lee, Tzyh-Cheang
    ;
    Yang, Fu-Liang
    The influence of top electrode material on the resistive switching properties of ZrO2 -based memory film using Pt as a bottom electrode was investigated in this letter. In comparison with Pt/ZrO2/Pt and Al/ZrO2/Pt devices, the Ti/ZrO2/Pt device exhibits different resistive switching current-voltage (I-V) curve, which can be traced and reproduced by a dc voltage more than 1000 times only showing a little decrease of resistance ratio between high and low resistance states. Furthermore, the broad dispersions of resistive switching characteristics in the Pt/ZrO2/Pt and Al/ZrO2/Pt devices are generally observed during successive resistive switching, but those dispersions are suppressed by the device using Ti as a top electrode. The reliability results, such as cycling endurance and continuous readout test, are also presented. The write-read-erase-read operations can be over 104 cycles without degradation. No data loss is found upon successive readout after performing various endurance cycles.
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    Voltage-polarity-independent and high-speed resistive switching properties of v-doped SrZrO3 thin films
    (2007-12-01)
    Lin, Chun-Chieh
    ;
    Lin, Chih-Yang
    ;
    Lin, Meng-Han
    ;
    Lin, Chen-Hsi
    ;
    Tseng, Tseung-Yuen
    In this paper, nonpolar resistive switching behavior is reported for the first time in a SZO-based memory device. The electrode materials used which have different conductivities affect the resistive switching properties of the device. The A1/V:SZO-LNO/Pt device shows nonpolar switching behavior, whereas the A1/V:SZO/LNO device has bipolar switching property. The resistance ratios of these two devices are quite distinct owing to the difference between the resistance of low resistance states. The A1/V:SZO-LNO/Pt device with lower resistive switching voltages (+/- 7 V turn on and 2 V turn off) and higher resistance ratio (10(7)) is more suitable for practical applications compared to the A1/V:SZO/LNO device. The switching speed of the A1/V:SZO-LNO/Pt device is 10 ns, which is the fastest speed that has ever been reported. The conduction mechanisms, nondestructive readout property, retention time, and endurance of this device are also reported in this paper.
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    Improvement of resistive switching characteristics in SrZrO3 thin films with embedded Cr layer
    (2008-10-01)
    Lin, Chih-Yang
    ;
    Lin, Meng-Han
    ;
    Wu, Ming-Chi
    ;
    Lin, Chen-Hsi
    ;
    Tseng, Tseung-Yuen
    The stabilization of the resistive switching properties is necessary to realize the memory application of the SrZrO3 (SZO)-based resistive switching devices. During continuous resistive switching cycle, broad variations of the resistive switching parameters of the SZO-based memory devices can be improved by a thin embedded Cr layer. The Cr metal layer is proposed to diffuse into and dope the SZO thin film to produce the space charge region, further reducing the effective resistive switching region. Hence, the good stabilization of the resistive switching properties can be obtained in the SZO films with embedded Cr layer.
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    Memory effect of RF sputtered ZrO2 thin films
    (2007-12-03)
    Lin, Chih-Yang
    ;
    Wu, Chung-Yi
    ;
    Wu, Chen-Yu
    ;
    Lin, Chun-Chieh
    ;
    Tseng, Tseung-Yuen
    Electrical properties of RF sputtered ZrO2 Memory thin films were investigated in this study. The device with structure AI/ZrO2/Pt shows a reproducible resistive switching behavior traced over 100 times at room temperature. Moreover, by using various top electrodes, such as Pt, Cu, Ni, Ag, Ti, and even W-probe, the resistive switching phenomenon can be observed in ZrO2-based memory with Pt bottom electrode, indicating that the ZrO2 bulk dominates the resistive switching. The bias polarity dependent resistive switching behavior is demonstrated in the Ti/ZrO2/Pt device, which might be due to interface reaction between Ti and ZrO2 film. The resistance value of high conductive state in the Ti/ZrO2/Pt device decreases with increasing current compliance implying the possibility for multi-bit storage. Besides, the Ti/ZrO2/Pt device can be operated over 2000 resistive switching cycles at 85 degrees C by sweeping DC voltage, and the two memory states demonstrate good stability under read voltage stress at room temperature and 95 degrees C. The write-read-erase-read operations can be over 10(3) cycles at 85 degrees C. No data loss is found upon successive readout before and after performing 10(3) endurance cycles at 85 degrees C. According to above experimental results, the ZrO2 thin film has high potential for nonvolatile memory application. (C) 2007 Elsevier B.V. All rights reserved.
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    Stable resistive switching behaviors of sputter deposited V-doped SrZrO3 thin films
    (2007-12-03)
    Lin, Chun-Chieh
    ;
    Yu, Jung-Sheng
    ;
    Lin, Chih-Yang
    ;
    Lin, Chen-Hsi
    ;
    Tseng, Tseung-Yuen
    The influences of doping concentration and element on the resistive switching properties of SZO-based memory devices are investigated in this study. The sputter-deposited LNO bottom electrode and SZO resistive layer exhibit (100)-preferred orientation, and the LNO film annealed at 600 degrees C performs smooth surface and high conductivity. The 0.3% V:SZO memory device depicts the good switching behaviors including high resistance ratio, high endurance, long retention time, and non-destructive readout property. The turn-on voltage is slightly dependent on the SZO thickness, while the turn-off voltage is almost irrelative to the thickness. Besides, the switching properties of MoO3-, MoO2-, and Cr2O3-doped SZO devices are also studied. The results demonstrate that the resistive switching is an intrinsic property of the SZO film, but proper doping concentration and element can improve and stabilize the resistive switching behaviors. (C) 2007 Elsevier B.V. All rights reserved.
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    Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films
    (2007-12-15)
    Lin, Chih-Yang
    ;
    Lin, Chun-Chieh
    ;
    Huang, Chun-Hsing
    ;
    Lin, Chen-Hsi
    ;
    Tseng, Tseung-Yuen
    Hysteretic I-V characteristics of the SrZrO3 (SZO) thin films with various Mo-doping concentrations were investigated in the study. The 0.2 mol% Mo-doping SZO-based memory device showed excellent resistive switching characteristics, and the resistive switching can be operated over 300 times during successive operation. Both high and low conductive states were stable over 10(4) s. Multi-bit behavior was investigated by dc voltage sweeping with different spans of voltage scan for OFF-process and by various OFF-pulse voltages as well. The endurance test can be over 1000 times with no data loss found. The experimental results showed high potential for nonvolatile memory application. (c) 2007 Published by Elsevier B.V.