學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Search Results

Now showing 1 - 10 of 48

Amphiregulin promotes cisplatin chemoresistance by upregulating ABCB1 expression in human chondrosarcoma
(2020-05-31)
Huang, Yu-Wen
;
Lin, Chih-Yang
;
Tsai, Hsiao-Chi
;
Fong, Yi-Chin
;
Han, Chien-Kuo
Chondrosarcomas are well known for their resistance to chemotherapeutic agents, including cisplatin, which is commonly used in chondrosarcomas. Amphiregulin (AR), a ligand of epidermal growth factor receptor (EGFR), plays an important role in drug resistance. We therefore sought to determine the role of AR in cisplatin chemoresistance. We found that AR inhibits cisplatin-induced cell apoptosis and promotes ATP-binding cassette subfamily B member 1 (ABCB1) expression, while knockdown of ABCB1 by small interfering RNA (siRNA) reverses these effects. High phosphoinositide 3-kinase (PI3K), Akt and nuclear factor kappa-light-chain-enhancer of activated B cells (NF-kappa B) phosphorylation levels were observed in cisplatin-resistant cells. Pretreating chondrosarcoma cells with PI3K, Akt and NF-kappa B inhibitors or transfecting the cells with p85, Akt and p65 siRNAs potentiated cisplatin-induced cytotoxicity. In a mouse xenograft model, knockdown of AR expression in chondrosarcoma cells increased the cytotoxic effects of cisplatin and also decreased tumor volume and weight. These results indicate that AR upregulates ABCB1 expression through the PI3K/Akt/NF-kappa B signaling pathway and thus contributes to cisplatin resistance in chondrosarcoma.
High-Precision Symmetric Weight Update of Memristor by Gate Voltage Ramping Method for Convolutional Neural Network Accelerator
(2020-03-01)
Chen, Jia
;
Pan, Wen-Qian
;
Li, Yi
;
Kuang, Rui
;
He, Yu-Hui
Memristor emerges as the key enabler for neural network accelerator. Here, we demonstrate high-precision symmetric weight update in a one transistor one resistor (1T1R) structure Ti/HfO2/TiN memristor using a gate voltage ramping method, with over 120-level states and low variation (< 4%). Incorporating all experimental non-idealities, the proposed mixed hardware-software convolutional neural network demonstrates over 92.79% online learning accuracy (against software equivalent 98.45%) for MNIST recognition task. The network also shows robustness to input image noises, array yield, and retention issues.
Abnormal High Resistive State Current Mechanism Transformation in Ti/HfO2/TiN Resistive Random Access Memory
(2020-02-01)
Zhou, Kuan-Ju
;
Chang, Ting-Chang
;
Lin, Chih-Yang
;
Chen, Chun-Kuei
;
Tseng, Yi-Ting
In this letter, the electrical characteristics of Ti/HfO2/TiN resistive random access memory (RRAM) were thoroughly investigated. An abnormal current degradation was seen in the DC sweeping cycle. Both the on-state and off-state current clearly exhibited degradation with time. Next, current fitting analysis was used to investigate the carrier transport mechanisms. The results indicate that the on-state carrier transport mechanism changed from space-charge-limited current into hopping conduction after cycle sweeping. However, the off-state current changes from Schottky thermal emission to hopping conduction. Based on comparisons of different Schottky distances and Schottky barriers, physical models were proposed to explain the abnormal current degradation behavior. Finally, COMSOL electric field simulations were used to show the electric field distribution around the conducting filament (CF), and the conducting model was subsequently verified.
A characteristic improved technique and analysis with plasma treatment to the electrode on oxide-based resistive random access memory
(2020-03-15)
Lin, Chih-Yang
;
Chang, Ting-Chang
;
Pan, Chih-Hung
;
Chen, Min-Chen
;
Xu, You-Lin
A technique was proposed to concentrate the distribution of set voltages. After a plasma treatment, the stability of the high-resistive state (HRS) increased, and the distribution of set voltages was more concentrated at 0.8 V, with a sufficient HRS/LRS resistive ratio (similar to 100x). In addition, the surface of the TiN electrode became rougher, causing oxygen to enter the TiN electrode and form a TiON layer, which acts as an oxygen reservoir. The reservoir is confirmed and the conduction model is supported by both electrical and material analyses. We propose that the observed improvement is due to the difference in the TiN electrode surface. (C) 2019 Published by Elsevier B.V.
Efficient Triple Output Network for Vertebral Segmentation and Identification
(2019-01-01)
Chuang, Cheng-Hung
;
Lin, Chih-Yang
;
Tsai, Yuan-Yu
;
Lian, Zhen-You
;
Xie, Hong-Xia
Precise vertebral segmentation provides the basis for spinal image analyses and interventions, such as vertebral compression fracture detection and other abnormalities. Deep learning is a popular and useful paradigm for medical image process. In this paper, we proposed an iterative vertebrae instance segmentation model, which has good generalization ability for segmenting all types of vertebrae, including cervical, thoracic, and lumbar vertebrae. In experimental results, our model not only used 17% less memory but also achieves better performance on vertebrae segmentation compared to existing methods. The existing method provides only two output for segmentation and classification respectively. However, with more memory available, our model is capable of providing third output for accurate anatomical prediction under the same amount of memory.
Investigating Material Changes at Different Gadolinium Doping Power Levels in Indium-Tin Oxide Intended for Use as an Insulator in Resistive Switching Memory
(2019-06-01)
Lin, Chun-Chu
;
Chen, Po-Hsun
;
Chen, Min-Chen
;
Chang, Ting-Chang
;
Lin, Chih-Yang
This paper investigates material modifications induced by cosputtering indium-tin oxide (ITO) with gadolinium (Gd) at two different power levels. In addition, resistance switching (RS) properties were also verified for use as an insulator in resistive random access memory (RRAM). Comparison of scanning electron microscope (SEM) measurements for the two different cosputtering powers indicated significant changes of the ITO surface. Transparency was also verified by an N&K analyzer measurement, with results indicating a constant in transparency induced by the lower power Gd doping, indicating potential for transparent applications. Furthermore, the mole fraction ratio defined by X-ray photoelectron spectroscopy reveals a Gd2O3 peak, a likely reason for the ITO thin film becoming less conductive. This ITO/Gd:ITO/TiN RRAM can exhibit stable and robust RS characteristics at a lower forming voltage. In addition, lower operating voltages, including both SET and RESET voltages, can be obtained. Reliability tests including endurance and retention were carried out to confirm its RS stability. The RS mechanism of this ITO/Gd:ITO/TiN device was also investigated with the current-voltage (I-V) fitting method. Moreover, temperature effects were also applied to verify the high-resistance state (HRS) mechanism. Finally, a conduction model was proposed to clarify the RS characteristics and confirm that the ITO/Gd:ITO/TiN device is appropriate for data storage.
Phomaketide A Inhibits Lymphangiogenesis in Human Lymphatic Endothelial Cells
(2019-04-01)
Tai, Huai-Ching
;
Lee, Tzong-Huei
;
Tang, Chih-Hsin
;
Chen, Lei-Po
;
Chen, Wei-Cheng
Lymphangiogenesis is an important biological process associated with cancer metastasis. The development of new drugs that block lymphangiogenesis represents a promising therapeutic strategy. Marine fungus-derived compound phomaketide A, isolated from the fermented broth of Phoma sp. NTOU4195, has been reported to exhibit anti-angiogenic and anti-inflammatory effects. However, its anti-lymphangiogenic activity has not been clarified to date. In this study, we showed that phomaketide A inhibited cell growth, migration, and tube formation of lymphatic endothelial cells (LECs) without an evidence of cytotoxicity. Mechanistic investigations revealed that phomaketide A reduced LECs-induced lymphangiogenesis via vascular endothelial growth factor receptor-3 (VEGFR-3), protein kinase C (PKC), and endothelial nitric oxide synthase (eNOS) signalings. Furthermore, human proteome array analysis indicated that phomaketide A significantly enhanced the protein levels of various protease inhibitors, including cystatin A, serpin B6, tissue factor pathway inhibitor (TFPI), and tissue inhibitor matrix metalloproteinase 1 (TIMP-1). Importantly, phomaketide A impeded tumor growth and lymphangiogenesis by decreasing the expression of LYVE-1, a specific marker for lymphatic vessels, in tumor xenograft animal model. These results suggest that phomaketide A may impair lymphangiogenesis by suppressing VEGFR-3, PKC, and eNOS signaling cascades, while simultaneously activating protease inhibitors in human LECs. We document for the first time that phomaketide A inhibits lymphangiogenesis both in vitro and in vivo, which suggests that this natural product could potentially treat cancer metastasis.
LiSiOX-Based Analog Memristive Synapse for Neuromorphic Computing
(2019-04-01)
Chen, Jia
;
Lin, Chih-Yang
;
Li, Yi
;
Qin, Chao
;
Lu, Ke
The progress in the neuromorphic computing hinges on the development of nanoscale analog artificial synapses. Here, we report a LiSiOX (LSO)-based memristive synapse with 100-level conductance states under identical pulses, representing synaptic potentiation and depression behaviors. The superior analog behaviors originate from the dynamic evolution of an electro-thermal modulation region with the motion of lithium and oxygen ions. A three-layer perceptron was constructed in simulation with LSO synapses, and a 91.97% recognition accuracy was achieved for handwritten digits. Moreover, the influences of several critical parameters, including device variability and weight precision, on the accuracy have been investigated. This letter provides guidelines for the optimization of synaptic device in robust memristive neural network.
Electrical properties and fatigue behaviors of ZrO2 resistive switching thin films
(2008-01-01)
Lin, Chih-Yang
;
Wang, Sheng-Yi
;
Lee, Dai-Ying
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
The resistive switching mechanisms of ZrO2 memory films are proposed to explain why resistive switching characteristics of Ti/ZrO2/Pt device are more stable than those of Pt/ZrO2/Pt and Al/ZrO2/Pt devices in this study. Different from the Pt/ZrO2/Pt and the Al/ZrO2/Pt devices, the carrier conduction mechanisms in the Ti/ZrO2/Pt device obey space charge limited current theory, which may be caused by the formation of the interface layer between Ti and ZrO2. Moreover, the resistive switching mechanisms are proposed to be related to the filament formation/rupture theory and oxygen ion migration. The location where filament formation/rupture takes place should be confined near the interface between Ti and ZrO2, leading to the stable resistive switching characteristics and a better endurance performance. During successive resistive cycles at room temperature and 150 degrees C, the fatigue behaviors are observed due to the degradation of both two memory states, which might be related to the transformation of the interface layers between Ti and ZrO2 and the coalescence of ZrOx clusters. (C) 2008 The Electrochemical Society.
Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devices
(2008-12-25)
Lin, Chih-Yang
;
Lee, Dai-Ying
;
Wang, Sheng-Yi
;
Lin, Chun-Chieh
;
Tseng, Tseung-Yuen
Resistive switching characteristics of Pt/Ti/Al2O3/Pt memory devices annealed at various temperatures including 400 degrees C, 500 degrees C and 600 degrees C for 1 h under ambient condition were investigated in the study. The Al2O3 thin films annealed at up to 600 degrees C for 1 h remain amorphous phase based on the X-ray diffraction (XRD) analyses. As increasing annealing temperature, the forming voltage (activating the pristine device) of the memory device decreases in contrast to the rising trend of the turn-on voltage (switching from high to low resistance state). However, the turn-off voltage (switching from low to high resistance state) is almost uninfluenced by thermal annealing. These phenomena might be attributed to the interdiffusion between Ti and Al2O3, based on the analyzed results of secondary ion mass spectroscopy (SIMS) and high resolution transmission electron microscope (HR-TEM). Moreover, the thermal annealing process eventually creates high conducting paths with a high density of oxygen vacancies between the two electrodes. (c) 2008 Elsevier B.V. All rights reserved.

學術出版;;Publications

Browse

Filters

Settings

Sort By

Results per page

🏛️國立陽明交通大學機構典藏

Search Results