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Author: search.filters.author.Lin, Chun-ChiehSubject: search.filters.subject.resistive random access memory (RRAM)

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Now showing 1 - 4 of 4
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    Resistive switching mechanisms of V-doped SrZrO3 memory films
    (2006-09-01)
    Lin, Chun-Chieh
    ;
    Tu, Bing-Chung
    ;
    Lin, Chao-Cheng
    ;
    Lin, Chen-Hsi
    ;
    Tseng, Tseung-Yuen
    The resistive switching behaviors of sputtered V-doped SrZrO3 (V:SZO) memory films were investigated in this letter. The current states of the memory films were switched between high current state (H-state) and low current state (L-state). The resistance ratio of the two current states was over 1000 at a read voltage. The switching mechanism from L- to H-state corresponds to the formation of current paths. However, this mechanism from H- to L-state is thought to be due to the fact that the defects present in the V:SZO film randomly trap electrons, and hence, the current paths are ruptured. The conduction mechanism of the H-state is dominated by ohmic conduction, whereas the L-state conduction is dominated by Frenkel-Poole emission. The polarity direction of the resistive switching is an intrinsic property of the SrZrO3 oxides. The V:SZO films with high uniformity and good stability are expected to be used in nonvolatile memory.
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    Voltage-polarity-independent and high-speed resistive switching properties of v-doped SrZrO3 thin films
    (2007-12-01)
    Lin, Chun-Chieh
    ;
    Lin, Chih-Yang
    ;
    Lin, Meng-Han
    ;
    Lin, Chen-Hsi
    ;
    Tseng, Tseung-Yuen
    In this paper, nonpolar resistive switching behavior is reported for the first time in a SZO-based memory device. The electrode materials used which have different conductivities affect the resistive switching properties of the device. The A1/V:SZO-LNO/Pt device shows nonpolar switching behavior, whereas the A1/V:SZO/LNO device has bipolar switching property. The resistance ratios of these two devices are quite distinct owing to the difference between the resistance of low resistance states. The A1/V:SZO-LNO/Pt device with lower resistive switching voltages (+/- 7 V turn on and 2 V turn off) and higher resistance ratio (10(7)) is more suitable for practical applications compared to the A1/V:SZO/LNO device. The switching speed of the A1/V:SZO-LNO/Pt device is 10 ns, which is the fastest speed that has ever been reported. The conduction mechanisms, nondestructive readout property, retention time, and endurance of this device are also reported in this paper.
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    Resistive switching properties of SrZrO(3)-based memory films
    (2007-04-01)
    Lin, Chun-Chieh
    ;
    Lin, Chao-Cheng
    ;
    Tu, Bing-Chung
    ;
    Yu, Jung-Sheng
    ;
    Lin, Chen-Hsi
    The resistive switching properties of the sputter-deposited SrZrO(3) (SZO) memory films were investigated in this study. The resistive switching behaviors of the SZO film can be improved by doping with vanadium oxide. The conduction mechanisms of the high and low current states of the 0.3% V-doped SZO (V:SZO) film are ohmic conduction and Frenkel-Poole emission, respectively, which implies the bulk effect of the memory film. The resistive ratio of two current states of the 0.3% V:SZO film remains 1000 times after applying 100 voltage sweeping cycles. Furthermore, the 0.3% V:SZO film shows stable resistive switching properties when measurement is performed at 100 degrees C. The band modulation of the SZO/LNO interface is proposed to explain the forming process of the SZO films. The 0.3% V:SZO memory film has excellent properties, such as high stability, good endurance, and long retention time, which make it a good candidate for next-generation nonvolatile memory application.
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    Stable resistive switching behaviors of sputter deposited V-doped SrZrO3 thin films
    (2007-12-03)
    Lin, Chun-Chieh
    ;
    Yu, Jung-Sheng
    ;
    Lin, Chih-Yang
    ;
    Lin, Chen-Hsi
    ;
    Tseng, Tseung-Yuen
    The influences of doping concentration and element on the resistive switching properties of SZO-based memory devices are investigated in this study. The sputter-deposited LNO bottom electrode and SZO resistive layer exhibit (100)-preferred orientation, and the LNO film annealed at 600 degrees C performs smooth surface and high conductivity. The 0.3% V:SZO memory device depicts the good switching behaviors including high resistance ratio, high endurance, long retention time, and non-destructive readout property. The turn-on voltage is slightly dependent on the SZO thickness, while the turn-off voltage is almost irrelative to the thickness. Besides, the switching properties of MoO3-, MoO2-, and Cr2O3-doped SZO devices are also studied. The results demonstrate that the resistive switching is an intrinsic property of the SZO film, but proper doping concentration and element can improve and stabilize the resistive switching behaviors. (C) 2007 Elsevier B.V. All rights reserved.