<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Lin, GraySubject: search.filters.subject.photonic crystals

Search Results

Now showing 1 - 6 of 6
  • Thumbnail Image
    Item type:Item,
    Relationship between Threshold Gain and Bragg Detuning in Photonic-Crystal Surface-Emitting Lasers
    (2019-01-01)
    Li, Zong-Lin
    ;
    Lin, Shen-Chieh
    ;
    Chen, Yu-Chen
    ;
    Lin, Gray
    ;
    電子工程學系及電子研究所
    The device characteristics of GaSb-based mid-infrared (MIR) photonic-crystal (PC) surface-emitting lasers (SELs) were investigated with respect to depths of etched PC holes. Measurement of below-threshold emission spectra identifies the bandgap as well as band-edge modes. The bandgap separation, which is a function of feedback coupling, increases with increasing depth. From within, the Bragg frequencies and their detuning from lasing frequencies can be determined. Moreover, with increasing depth, the threshold pumping density decreases exponentially to a saturation level, which is assigned to minimum device modal gain of certain value. The relative threshold gain is then plotted as a function of normalized frequency detuning. The gain-detuning relationship of PCSELs is similar to that of one-dimensional (1D) distributed feedback (DFB) lasers.
  • Thumbnail Image
    Item type:Item,
    Quantum-Dot Photonic-Crystal Surface-Emitting Lasers with Bottom Distributed Bragg Reflector
    (2018-09-01)
    Hsu, Ming-Yang
    ;
    Lin, Gray
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    Quantum-dot (QD) photonic-crystal (PC) surface-emitting laser (SEL) devices with bottom distributed Bragg reflector (DBR) were fabricated based on vertical-cavity SEL structure with top DBR completely removed. Two-dimensional (2D) PCs were deeply etched through QD multilayers to yield strong diffraction coupling. Room-temperature optically pumped lasing emissions at 1194 nm and 1296 nm were demonstrated for two lattice periods of 360 nm and 395 nm, respectively. Two lasing wavelengths separated over 100 nm; however, there were less than two times difference in threshold power densities while slope efficiencies were comparable. The unique spectral gain characteristics of QDs were considered in interpretation of gain-cavity detuning. Moreover, simulation revealed the sub-cavity should be designed so that its resonant wavelength is in phase with lasing wavelength.
  • Thumbnail Image
    Item type:Item,
    Mid-Infrared Photonic-Crystal Surface-Emitting Lasers with InGaAs/GaAsSb 'W'-Type Quantum Wells Grown on InP Substrate
    (2018-12-01)
    Li, Zong-Lin
    ;
    Kang, Yuan-Chi
    ;
    Lin, Gray
    ;
    Lee, Chien-Ping
    ;
    電子工程學系及電子研究所
    InP-based InGaAs/GaAsSb 'W'-type quantum well (QW) photonic-crystal (PC) surface-emitting lasers (SELs) of 2.2 mu m wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Photonic-crystal surface-emitting laser (PCSEL) devices are investigated in terms of PC parameters of etch depth, lattice period, and filling factor. The lasing emissions cover wavelengths from 2182 nm to 2253 nm. The temperature-dependent lasing characteristics are also studied in terms of lattice period. All PCSELs show consistent lasing wavelength shift against temperature at a rate of 0.17 nm/K. The characteristic temperatures of PCSELs are extracted and discussed with respect to wavelength detuning between QW gain peak and PC cavity resonance.
  • Thumbnail Image
    Item type:Item,
    Effect of Etching Depth on Threshold Characteristics of GaSb-Based Middle Infrared Photonic-Crystal Surface-Emitting Lasers
    (2019-03-14)
    Li, Zong-Lin
    ;
    Lin, Shen-Chieh
    ;
    Lin, Gray
    ;
    Cheng, Hui-Wen
    ;
    Sun, Kien-Wen
    We study the effect of etching depth on the threshold characteristics of GaSb-based middle infrared (Mid-IR) photonic-crystal surface-emitting lasers (PCSELs) with different lattice periods. The below-threshold emission spectra are measured to identify the bandgap as well as band-edge modes. Moreover, the bandgap separation widens with increasing etching depth as a result of enhanced diffraction feedback coupling. However, the coupling is nearly independent of lattice period. The relationship between threshold gain and Bragg detuning is also experimentally determined for PCSELs and is similar to that calculated theoretically for one-dimensional distributed feedback lasers.
  • Thumbnail Image
    Item type:Item,
    Continuous-Wave Lasing of 1.3-mu m Quantum-Dot Photonic-Crystal Surface-Emitting Lasers
    (2018-01-01)
    Hsu, Ming-Yang
    ;
    Lin, Gray
    ;
    Pan, Po-Chou
    ;
    Chen, Yu-Chen
    ;
    電子工程學系及電子研究所
    Fabrication of electrically injected quantum-dot photonic-crystal (PC) surface-emitting lasers (SELs) is simplified by deposition of indium-tin-oxide over "PC slab-on-substrate" structure. Temperature-insensitive threshold current behavior is exhibited for negatively detuned PCSEL where continuous-wave lasing emission at 1308.4 nm is demonstrated for the first time.
  • Thumbnail Image
    Item type:Item,
    Photonic Crystal Surface Emitting Lasers With Quantum Dot Active Region
    (2017-10-15)
    Chen, Tzu-Shan
    ;
    Li, Zong-Lin
    ;
    Hsu, Ming-Yang
    ;
    Lin, Gray
    ;
    Lin, Sheng-Di
    GaAs-based InAs/InGaAs/GaAs quantum dot (QD) photonic crystal (PC) surface emitting lasers of 1.3 mu m wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Laser devices are characterized in terms of PC parameters and temperature-dependent measurements are also carried out. The impact of wavelength detuning between PC resonant wavelength and QD gain peak is manifested in the experiments. Moreover, simplified simulation reveals that etched PC depth plays an even more critical role in active region of QD compared to that of quantum well.