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Quantum-Dot Photonic-Crystal Surface-Emitting Lasers with Bottom Distributed Bragg Reflector
(2018-09-01)
Hsu, Ming-Yang
;
Lin, Gray
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Quantum-dot (QD) photonic-crystal (PC) surface-emitting laser (SEL) devices with bottom distributed Bragg reflector (DBR) were fabricated based on vertical-cavity SEL structure with top DBR completely removed. Two-dimensional (2D) PCs were deeply etched through QD multilayers to yield strong diffraction coupling. Room-temperature optically pumped lasing emissions at 1194 nm and 1296 nm were demonstrated for two lattice periods of 360 nm and 395 nm, respectively. Two lasing wavelengths separated over 100 nm; however, there were less than two times difference in threshold power densities while slope efficiencies were comparable. The unique spectral gain characteristics of QDs were considered in interpretation of gain-cavity detuning. Moreover, simulation revealed the sub-cavity should be designed so that its resonant wavelength is in phase with lasing wavelength.
Digitally Chirped Multilayer Quantum Dot Lasers with Dual-Wavelength Lasing Emissions
(2019-06-01)
Sun, Yi-Jan Leo
;
Hsieh, Pin-Hsien
;
Lin, Gray
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The dual-wavelength lasing emissions of digitally chirped multilayer quantum dot (QD) lasers are investigated both experimentally and theoretically. The two lasing wavelengths are both identified as ground-state (GS) emissions but originated from different stacks of QD multilayers. The lasing spectra exhibited broadening and splitting properties by injecting more current. Moreover, the wavelength-resolved light-current characteristics reveal that first GS lasing intensity upon the threshold of second GS transitions neither saturates nor droops with increasing injection current, but increases with slightly reduced slope efficiency. A theoretical model is developed for digitally chirped multilayer QD lasers. The simulation results qualitatively reproduce the experimental observations.
Chirped multilayer quantum-dot mode-locked lasers with dual-wavelength and ground-state lasing emissions
(2019-01-01)
Chen, Yu-Chen
;
Hsieh, Pin-Hsien
;
Lin, Gray
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Monolithic passively mode-locked lasers are investigated based on chirped multi-layer InAs/InGaAs quantum-dot (QD) structure. The forward and backward tracings of light-current characteristics show two kinks and two hysteresis loops. The optical spectra reveal two lasing wavelengths around 1273 and 1230 nm, which are identified as two ground-state emissions of two differently chirped QD layers. The corresponding radio-frequency (RF) spectra of high-speed detector reveal two RF peaks at 16.21 and 16.03 GHz, which are attributed to fundamental mode-locking of two respective wavelengths. The laser pulses are confirmed by optical autocorrelator to exhibit dual-wavelength mode-locking. The pulsed characteristics of two lasing wavelengths are also discussed in terms of operating conditions. (C) 2019 Society of Photo-Optical Instrumentation Engineers (SPIE)
Photonic Crystal Surface Emitting Lasers With Quantum Dot Active Region
(2017-10-15)
Chen, Tzu-Shan
;
Li, Zong-Lin
;
Hsu, Ming-Yang
;
Lin, Gray
;
Lin, Sheng-Di
GaAs-based InAs/InGaAs/GaAs quantum dot (QD) photonic crystal (PC) surface emitting lasers of 1.3 mu m wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Laser devices are characterized in terms of PC parameters and temperature-dependent measurements are also carried out. The impact of wavelength detuning between PC resonant wavelength and QD gain peak is manifested in the experiments. Moreover, simplified simulation reveals that etched PC depth plays an even more critical role in active region of QD compared to that of quantum well.
Quantum-Dot Surface Emitting Distributed Feedback Lasers Using Indium-Tin-Oxide as Top Claddings
(2016-08-01)
Chang, Ting-Yuan
;
Pan, Chien-Hung
;
Hong, Kuo-Bin
;
Lin, Chien-Hung
;
Lin, Gray
We demonstrate InAs/InGaAs quantum-dot surface emitting distributed feedback (SE-DFB) lasers, using an indium-tin-oxide layer as top cladding, which eliminates the regrowth process used in conventional DFB lasers to greatly simplify laser process. The lasing peak near 1.30 mu m realized using the grating period of 375 nm exhibited a 0.13-nm linewidth and a low-temperature red-shift rate of 0.1 nm/K. The laser had a threshold current density of 210 A/cm(2) and a characteristic temperature of 94.6 K. The surface emitting laser light had the divergence angles of less than 1 degrees and 8 degrees similar to 9 degrees along and perpendicular to the grating direction, respectively.
Relative Intensity Noise Characteristics of Long-Wavelength Quantum Dot Vertical-Cavity Surface-Emitting Lasers
(2008-08-01)
Peng, Peng-Chun
;
Yeh, Chao-En
;
Kuo, Hao-Chung
;
Xuan, Ron
;
Lin, Chun-Ting
In the study we experimentally investigated the relative intensity noise (RIN) characteristics of a quantum-dot vertical-cavity surface-emitting laser (QD VCSEL). The single-mode QD VCSEL grown on a GaAs substrate is a fully doped structure. Additionally. the resonance frequency of the QD VCSEL with external light injection is as high as 19.2 GHz.

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