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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Lin, GraySubject: search.filters.subject.semiconductor lasers

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Now showing 1 - 7 of 7
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    Digitally Chirped Multilayer Quantum Dot Lasers with Dual-Wavelength Lasing Emissions
    (2019-06-01)
    Sun, Yi-Jan Leo
    ;
    Hsieh, Pin-Hsien
    ;
    Lin, Gray
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    The dual-wavelength lasing emissions of digitally chirped multilayer quantum dot (QD) lasers are investigated both experimentally and theoretically. The two lasing wavelengths are both identified as ground-state (GS) emissions but originated from different stacks of QD multilayers. The lasing spectra exhibited broadening and splitting properties by injecting more current. Moreover, the wavelength-resolved light-current characteristics reveal that first GS lasing intensity upon the threshold of second GS transitions neither saturates nor droops with increasing injection current, but increases with slightly reduced slope efficiency. A theoretical model is developed for digitally chirped multilayer QD lasers. The simulation results qualitatively reproduce the experimental observations.
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    Chirped multilayer quantum-dot mode-locked lasers with dual-wavelength and ground-state lasing emissions
    (2019-01-01)
    Chen, Yu-Chen
    ;
    Hsieh, Pin-Hsien
    ;
    Lin, Gray
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    Monolithic passively mode-locked lasers are investigated based on chirped multi-layer InAs/InGaAs quantum-dot (QD) structure. The forward and backward tracings of light-current characteristics show two kinks and two hysteresis loops. The optical spectra reveal two lasing wavelengths around 1273 and 1230 nm, which are identified as two ground-state emissions of two differently chirped QD layers. The corresponding radio-frequency (RF) spectra of high-speed detector reveal two RF peaks at 16.21 and 16.03 GHz, which are attributed to fundamental mode-locking of two respective wavelengths. The laser pulses are confirmed by optical autocorrelator to exhibit dual-wavelength mode-locking. The pulsed characteristics of two lasing wavelengths are also discussed in terms of operating conditions. (C) 2019 Society of Photo-Optical Instrumentation Engineers (SPIE)
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    Continuous-Wave Lasing of 1.3-mu m Quantum-Dot Photonic-Crystal Surface-Emitting Lasers
    (2018-01-01)
    Hsu, Ming-Yang
    ;
    Lin, Gray
    ;
    Pan, Po-Chou
    ;
    Chen, Yu-Chen
    ;
    電子工程學系及電子研究所
    Fabrication of electrically injected quantum-dot photonic-crystal (PC) surface-emitting lasers (SELs) is simplified by deposition of indium-tin-oxide over "PC slab-on-substrate" structure. Temperature-insensitive threshold current behavior is exhibited for negatively detuned PCSEL where continuous-wave lasing emission at 1308.4 nm is demonstrated for the first time.
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    Photonic Crystal Surface Emitting Lasers with InAs/InGaAs/GaAs Quantum Dots
    (2017-01-01)
    Chen, Tzu-Shan
    ;
    Lee, Zong-Lin
    ;
    Hsu, Ming-Yang
    ;
    Lin, Gray
    ;
    Lin, Sheng-Di
    InAs/InGaAs/GaAs quantum-dot (QD) photonic crystal (PC) surface emitting lasers were fabricated and room-temperature lasing emissions were demonstrated by optical pumping for the first time. The etch depth of PC holes is the critical parameter for adjacent diffraction coupling between PC structure and QD gain media.
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    Photonic Crystal Surface Emitting Lasers With Quantum Dot Active Region
    (2017-10-15)
    Chen, Tzu-Shan
    ;
    Li, Zong-Lin
    ;
    Hsu, Ming-Yang
    ;
    Lin, Gray
    ;
    Lin, Sheng-Di
    GaAs-based InAs/InGaAs/GaAs quantum dot (QD) photonic crystal (PC) surface emitting lasers of 1.3 mu m wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Laser devices are characterized in terms of PC parameters and temperature-dependent measurements are also carried out. The impact of wavelength detuning between PC resonant wavelength and QD gain peak is manifested in the experiments. Moreover, simplified simulation reveals that etched PC depth plays an even more critical role in active region of QD compared to that of quantum well.
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    Dual-wavelength mode-locking of novel chirped multilayer quantum-dot lasers
    (2016)
    Chiang, Chun-Ping
    ;
    Lin, Gray
    ;
    Chen, Yu-Chen
    ;
    Cheng, Hsu-Chieh
    ;
    電子工程學系及電子研究所
    Monolithic passively mode-locked lasers are investigated based on chirped multilayer InAs/InGaAs QDs. Three chirped wavelengths, with stacking numbers of 2, 3 and 5 layers, are designed with capped InGaAs thickness of 4, 3 and 1 nm, respectively. The ridge-waveguide devices of 5-mu m width and 3-mm length are fabricated to have absorber-to-gain length ratio of 1:9. A curve tracer is used to analyze the hysteresis on the light-current curve. Two kinks in the L-I curve are observed at threshold current near 50 mA and at higher current of about 150 mA. The lasing wavelength just above threshold is centered at 1268 nm and the RF spectrum of mode-locking is peaked at 13.32 GHz. At well above threshold of 200 mA, another RF peak at 13.21 GHz occurs that corresponds to shorter lasing wavelength around 1233 nm. The two lasing wavelengths are originated from ground-state transitions of two groups of InAs/InGaAs QDs. Simultaneous dual-wavelength mode-locking is therefore achieved at rather low forward current and low reverse bias by incorporating this novel design of QD structure.
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    Tunable multi-wavelength quantum dot external-cavity lasers
    (2013)
    Pai, Chen-Hung
    ;
    Lin, Gray
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    The chirped multilayer quantum-dot (QD) gain media are arranged in Fourier-transform external-cavity laser (FT-ECL) configuration. Novel slit designs select 2, 3, and 4 different wavelengths that are diffracted from the grating for optical feedback. Therefore, the dual-, triple-and quadruple-wavelength ECLs are demonstrated in this study. The resulted multi-wavelength lasing emissions are achieved under injected current of 100 mA (or 1.33 kA/cm(2)) with signal to amplified spontaneous emission (ASE) ratio over 20 dB. Around peak-gain wavelength of 12xx-nm range, the adjacent wavelength separation is over 50 nm for dual-wavelength lasing, up to 13 nm for triple-wavelength lasing, and about 4-5 nm for quadruple-wavelength lasing emissions. To further extend the wavelength separation for dual-wavelength lasing emissions, another modified scheme with two separate external mirrors are adopted and the achieved maximum value is about 126 nm in wavelength separation or over 25 THz in frequency difference. The terahertz (THz) generation by photomixing of dual-wavelength ECLs is also discussed in this study.