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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Lin, Gray

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Now showing 1 - 10 of 38
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    Relationship between Threshold Gain and Bragg Detuning in Photonic-Crystal Surface-Emitting Lasers
    (2019-01-01)
    Li, Zong-Lin
    ;
    Lin, Shen-Chieh
    ;
    Chen, Yu-Chen
    ;
    Lin, Gray
    ;
    電子工程學系及電子研究所
    The device characteristics of GaSb-based mid-infrared (MIR) photonic-crystal (PC) surface-emitting lasers (SELs) were investigated with respect to depths of etched PC holes. Measurement of below-threshold emission spectra identifies the bandgap as well as band-edge modes. The bandgap separation, which is a function of feedback coupling, increases with increasing depth. From within, the Bragg frequencies and their detuning from lasing frequencies can be determined. Moreover, with increasing depth, the threshold pumping density decreases exponentially to a saturation level, which is assigned to minimum device modal gain of certain value. The relative threshold gain is then plotted as a function of normalized frequency detuning. The gain-detuning relationship of PCSELs is similar to that of one-dimensional (1D) distributed feedback (DFB) lasers.
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    Temperature Dependence of Electrically Injected Quantum-Dot Photonic-Crystal Surface-Emitting Lasers
    (2018-01-01)
    Hsu, Ming-Yang
    ;
    Lin, Gray
    ;
    Chen, Yu-Chen
    ;
    Pan, Chien-Hung
    ;
    電子工程學系及電子研究所
    We have simplified fabrication of electrically injected quantum-dot photonic-crystal surface-emitting lasers and demonstrated lasing emissions at 1313 nm. Excellent threshold temperature characteristics was exhibited in range of 20 similar to 45 degrees C with characteristics temperature of almost infinity.
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    Quantum-Dot Photonic-Crystal Surface-Emitting Lasers with Bottom Distributed Bragg Reflector
    (2018-09-01)
    Hsu, Ming-Yang
    ;
    Lin, Gray
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    Quantum-dot (QD) photonic-crystal (PC) surface-emitting laser (SEL) devices with bottom distributed Bragg reflector (DBR) were fabricated based on vertical-cavity SEL structure with top DBR completely removed. Two-dimensional (2D) PCs were deeply etched through QD multilayers to yield strong diffraction coupling. Room-temperature optically pumped lasing emissions at 1194 nm and 1296 nm were demonstrated for two lattice periods of 360 nm and 395 nm, respectively. Two lasing wavelengths separated over 100 nm; however, there were less than two times difference in threshold power densities while slope efficiencies were comparable. The unique spectral gain characteristics of QDs were considered in interpretation of gain-cavity detuning. Moreover, simulation revealed the sub-cavity should be designed so that its resonant wavelength is in phase with lasing wavelength.
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    Mid-Infrared Photonic-Crystal Surface-Emitting Lasers with InGaAs/GaAsSb 'W'-Type Quantum Wells Grown on InP Substrate
    (2018-12-01)
    Li, Zong-Lin
    ;
    Kang, Yuan-Chi
    ;
    Lin, Gray
    ;
    Lee, Chien-Ping
    ;
    電子工程學系及電子研究所
    InP-based InGaAs/GaAsSb 'W'-type quantum well (QW) photonic-crystal (PC) surface-emitting lasers (SELs) of 2.2 mu m wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Photonic-crystal surface-emitting laser (PCSEL) devices are investigated in terms of PC parameters of etch depth, lattice period, and filling factor. The lasing emissions cover wavelengths from 2182 nm to 2253 nm. The temperature-dependent lasing characteristics are also studied in terms of lattice period. All PCSELs show consistent lasing wavelength shift against temperature at a rate of 0.17 nm/K. The characteristic temperatures of PCSELs are extracted and discussed with respect to wavelength detuning between QW gain peak and PC cavity resonance.
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    Digitally Chirped Multilayer Quantum Dot Lasers with Dual-Wavelength Lasing Emissions
    (2019-06-01)
    Sun, Yi-Jan Leo
    ;
    Hsieh, Pin-Hsien
    ;
    Lin, Gray
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    The dual-wavelength lasing emissions of digitally chirped multilayer quantum dot (QD) lasers are investigated both experimentally and theoretically. The two lasing wavelengths are both identified as ground-state (GS) emissions but originated from different stacks of QD multilayers. The lasing spectra exhibited broadening and splitting properties by injecting more current. Moreover, the wavelength-resolved light-current characteristics reveal that first GS lasing intensity upon the threshold of second GS transitions neither saturates nor droops with increasing injection current, but increases with slightly reduced slope efficiency. A theoretical model is developed for digitally chirped multilayer QD lasers. The simulation results qualitatively reproduce the experimental observations.
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    Chirped multilayer quantum-dot mode-locked lasers with dual-wavelength and ground-state lasing emissions
    (2019-01-01)
    Chen, Yu-Chen
    ;
    Hsieh, Pin-Hsien
    ;
    Lin, Gray
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    Monolithic passively mode-locked lasers are investigated based on chirped multi-layer InAs/InGaAs quantum-dot (QD) structure. The forward and backward tracings of light-current characteristics show two kinks and two hysteresis loops. The optical spectra reveal two lasing wavelengths around 1273 and 1230 nm, which are identified as two ground-state emissions of two differently chirped QD layers. The corresponding radio-frequency (RF) spectra of high-speed detector reveal two RF peaks at 16.21 and 16.03 GHz, which are attributed to fundamental mode-locking of two respective wavelengths. The laser pulses are confirmed by optical autocorrelator to exhibit dual-wavelength mode-locking. The pulsed characteristics of two lasing wavelengths are also discussed in terms of operating conditions. (C) 2019 Society of Photo-Optical Instrumentation Engineers (SPIE)
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    Effect of Etching Depth on Threshold Characteristics of GaSb-Based Middle Infrared Photonic-Crystal Surface-Emitting Lasers
    (2019-03-14)
    Li, Zong-Lin
    ;
    Lin, Shen-Chieh
    ;
    Lin, Gray
    ;
    Cheng, Hui-Wen
    ;
    Sun, Kien-Wen
    We study the effect of etching depth on the threshold characteristics of GaSb-based middle infrared (Mid-IR) photonic-crystal surface-emitting lasers (PCSELs) with different lattice periods. The below-threshold emission spectra are measured to identify the bandgap as well as band-edge modes. Moreover, the bandgap separation widens with increasing etching depth as a result of enhanced diffraction feedback coupling. However, the coupling is nearly independent of lattice period. The relationship between threshold gain and Bragg detuning is also experimentally determined for PCSELs and is similar to that calculated theoretically for one-dimensional distributed feedback lasers.
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    Electrically injected 1.3-mu m quantum-dot photonic-crystal surface-emitting lasers
    (2017-12-25)
    Hsu, Ming-Yang
    ;
    Lin, Gray
    ;
    Pan, Chien-Hung
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    We have fabricated electrically injected InAs/InGaAs/GaAs quantum-dot (QD) photonic-crystal (PC) surface-emitting lasers (SELs) and successfully demonstrated roomtemperature lasing emissions at 1.3-mu m wavelength for the first time. The PCSEL device fabrication was greatly simplified by deposition of transparent conducting layer of indiumtin- oxide over "PC slab-on-substrate" structure. The threshold current density per QD layer was as low as 50 A/cm(2)/layer; however, the optical output was limited to 2 mW. The bandedge lasing mode was identified and near-circular beam with narrow divergence angle less than 2 degrees was achieved. (C) 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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    Continuous-Wave Lasing of 1.3-mu m Quantum-Dot Photonic-Crystal Surface-Emitting Lasers
    (2018-01-01)
    Hsu, Ming-Yang
    ;
    Lin, Gray
    ;
    Pan, Po-Chou
    ;
    Chen, Yu-Chen
    ;
    電子工程學系及電子研究所
    Fabrication of electrically injected quantum-dot photonic-crystal (PC) surface-emitting lasers (SELs) is simplified by deposition of indium-tin-oxide over "PC slab-on-substrate" structure. Temperature-insensitive threshold current behavior is exhibited for negatively detuned PCSEL where continuous-wave lasing emission at 1308.4 nm is demonstrated for the first time.
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    Photonic Crystal Surface Emitting Lasers with InAs/InGaAs/GaAs Quantum Dots
    (2017-01-01)
    Chen, Tzu-Shan
    ;
    Lee, Zong-Lin
    ;
    Hsu, Ming-Yang
    ;
    Lin, Gray
    ;
    Lin, Sheng-Di
    InAs/InGaAs/GaAs quantum-dot (QD) photonic crystal (PC) surface emitting lasers were fabricated and room-temperature lasing emissions were demonstrated by optical pumping for the first time. The etch depth of PC holes is the critical parameter for adjacent diffraction coupling between PC structure and QD gain media.