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Now showing 1 - 10 of 87
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    Photoluminescence studies of GaN films of different buffer layer and doping concentration
    (1998-02-01)
    Shen, CC
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    Shu, CK
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    Lin, HC
    ;
    Ou, J
    ;
    Chen, WK
    Photoluminescence (PL) measurements of GaN films with various buffer thicknesses and Si-doping concentrations have been carried out. PL response of one specific sample was studied for temperature dependence. The results showed that the band gap energy reduction is linearly proportional to the temperature increase with a slope of similar to-4 x 10(-4) eV.K-1 and that the activation energies for donor-bound and acceptor-bound exciton transitions are 15 and 18 meV, respectively. In Si-doped GaN films, the PL data indicated that the reduced gap depends on the third power of carrier concentration as n(1/3). We also obtained a concentration coefficient of 2.34 x 10(-4) eV.cm and a band gap energy of 3.426 eV in the undoped GaN film.
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    Effects of N2O-annealed sacrificial oxide on the short-channel effects of nMOSFETs
    (1998-02-19)
    Jong, FC
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    Huang, TY
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    Chao, TS
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    Lin, HC
    ;
    Wang, MF
    The authors report the effects of N2O-annealed sacrificial oxide on nMOSFETs. It is demonstrated that by adding an N2O-annealing step to the sacrificial. oxide which was stripped off before growing the final gate oxide, the reverse short-channel effects (RSCE) can still be effectively suppressed.
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    Evaluation of plasma charging damage in ultrathin gate oxides
    (1998-03-01)
    Lin, HC
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    Chen, CC
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    Chien, CH
    ;
    Hsein, SK
    ;
    Wang, MF
    Monitoring of plasma charging damage in ultrathin oxides (e.g., <4 nm) is essential to understand its impact on device reliability. However, it is observed that the shift of several device parameters, including threshold voltage, transconductance, and subthreshold swing, are not sensitive to plasma charging and thus not suitable for this purpose. Consequently, some destructive methods, such as the charge-to-breakdown measurement, are necessary to evaluate plasma damage in the ultrathin oxides.
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    An elucidation of solid incorporation of InGaN grown by metalorganic vapor phase epitaxy
    (1998-06-01)
    Ou, J
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    Chen, WK
    ;
    Lin, HC
    ;
    Pan, YC
    ;
    Lee, MC
    We carried out a systematic study on the solid incorporation of InGaN under various growth conditions using metalorganic vapor phase epitaxy (MOVPE). The solid distribution of InGaN was found to be very sensitive to the growth temperature, and the TMGa and TMIn flow rates. Experimental results indicated that at low Ga flow rates InGaN growth is essentially governed by thermodynamic factors, whereas at high growth rate the InGaN solid concentration is determined merely by the vapor composition in the gas phase. In regard to the effect of TMIn flow rates on InGaN growth, it was found that once In droplets form on the surface, the In growth efficiency correspondingly decreases significantly; accounting for the low In solid concentration in InGaN at high TMIn flow rates.
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    Improving radiation hardness of EEPROM/flash cell by N2O annealing
    (1998-07-01)
    Huang, TY
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    Jong, FC
    ;
    Chao, TS
    ;
    Lin, HC
    ;
    Leu, LY
    The effects of an N2O anneal on the radiation effects of a split-gate electrical erasable programmable read only memory (EEPROM)/flash cell with a recently-proposed horn-shaped floating gate were studied. We have found that although the cells appear to survive 1 Mrad(Si) Co-60 irradiation without data retention failure, the write/erase cycling endurance was severely impeded after irradiation. Specifically, the write/erase cycling endurance was degraded to 20 K from the pre-irradiation value of 50 K, However, by adding an N2O annealing step after the interpoly oxidation, the after-irradiation write/erase cycling endurance of the resultant cell can be significantly improved to over 45 K, N2O annealing also improves the after-irradiation program and erase efficiencies. The N2O annealing step therefore presents a potential method for enhancing the robustness of the horn-shaped floating-gate EEPROM/flash cells for radiation-hard applications.
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    Raman and X-ray studies of InN films grown at different temperatures by metalorganic vapor phase epitaxy
    (1998-09-01)
    Chen, WK
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    Lin, HC
    ;
    Pan, YC
    ;
    Ou, J
    ;
    Shu, CK
    We used Raman scattering and X-ray diffraction (XRD) methods to investigate the properties of InN films deposited at temperatures ranging from 325 to 600 degrees C by metalorganic vapor phase epitaxy (MOVPE). Significant line broadening, softening and intensity evolution were observed from films at growth temperatures between 375 and 450 degrees C. This can be attributed to the formation of mixed hexagonal and cubic structures and related dislocation defects. As the growth temperature was further increased, the hexagonal phase tvas found to be dominant in the deposited InN film.
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    The effects of shallow germanium halo doping on N-channel metal oxide semiconductor field effect transistors
    (1999-01-15)
    Wang, MF
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    Chien, CH
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    Chao, TS
    ;
    Lin, HC
    ;
    Jong, FC
    In this paper, we report the use of shallow germanium halo doping on improving the short-channel effects of deep submicron n-channel metal-oxide-semiconductor field effect transistors. It is demonstrated that by adding a shallow (i.e., 10 keV) germanium large-angle-tilt implant (LATID), V-th lowering in short-channel transistors is significantly improved. The improvement is found to increase with increasing germanium dose. A low germanium dose (e.g., 5 x 10(12) cm(-2)) is also found to effectively improve the drain-induced barrier lowering (DIBL) of the short-channel transistors. Our results also show that junction leakage degradation, which has been previously reported to accompany germanium implants using higher energy, can be minimized by the shallow low-dose implant used in this study.
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    Influence of sapphire nitridation on properties of indium nitride prepared by metalorganic vapor phase epitaxy
    (1999-02-01)
    Pan, YC
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    Lee, WH
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    Shu, CK
    ;
    Lin, HC
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    Chiang, CI
    Indium nitride films have been successfully grown on (0001) sapphire substrates by metalorganic vapor phase epitaxy (MOVPE) using TMIn and NH3 as source precursors. Experimental results indicated that pregrowth treatments, such as buffer layer growth, nitridation temperature and nitridation duration have dramatic effects on the growth of the InN films. For films nitridated at 1,000 degrees C for 40 min without any buffer layer growth, we obtained an InN film quality with Hall mobility, carrier concentration and line width of Raman E-2 mode of 270 cm(2)/V.s, 5 x 10(19) cm(-3) and 4.5 cm(-1), respectively, which is among the best quality ever reported for such type of film grown by MOVPE.
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    Oxide thickness dependence of plasma charging damage
    (1999-03-01)
    Lin, HC
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    Chen, CC
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    Wang, MF
    ;
    Hsien, SK
    ;
    Chien, CH
    Charging damage induced in oxides with thickness ranging from 8.7 to 2.5 nm is investigated. Results of charge-to-breakdown (Q(bd)) measurements performed on control devices indicate that the polarity dependence increases with decreasing oxide thickness at both room and elevated temperature (180 degrees C) conditions. As the oxide thickness is thinned down below 3nm, the Q(bd) becomes very sensitive to the stressing current density and temperature. Experimental results show that severe antenna effect would occur during plasma ashing treatment in devices with gate oxides as thin as 2.6 nm. It is concluded that high stressing current level, negative plasma charging, and high process temperature are key factors responsible for the damage. (C) 1999 Elsevier Science Ltd. All rights reserved.
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    Reliability of ultrathin gate oxides for ULSI devices
    (1999-05-01)
    Chang, CY
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    Chen, CC
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    Lin, HC
    ;
    Liang, MS
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    Chien, CH
    Ultrathin gate oxide, which is essential for low supply voltage and high driving capability, is indispensable for the continued scaling of ULSI technologies towards smaller and faster devices. Needless to say, the reliability of ultrathin oxide is of major concerns in the manufacturing of the state-of-the-art metal-oxide-semiconductor devices. This payer reviews the reliability issues regarding ultrathin gate oxide for present and future ULSI technologies. Issues including gate leakage current, time-dependent dielectric breakdown, poly-gate depletion, boron penetration, and plasma process-induced damage will be addressed. Several techniques such as nitrided oxide and alternative processes, which are proposed to improve gate oxide reliabilities, are also discussed. (C) 1999 Elsevier Science Ltd. All rights reserved.