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Resist-related damage on ultrathin gate oxide during plasma ashing
(1997-02-01)
Chien, CH
;
Chang, CY
;
Lin, HC
;
Chang, TF
;
Chiou, SG
This paper presents an important observation of plasma-induced damage on ultrathin oxides during O-2 plasma ashing by metal ''antenna'' structures with photoresist on top of the electrodes, It is found that for MOS capacitors without overlying photoresist during plasma ashing, only minor damage occurs on thin oxides, even for oxide thickness down to 4.2 nm and an area ratio as large as 10(4), In contrast, oxides thinner than 6 nm with resist overlayer suffer significant degradation from plasma charging, This phenomenon is contrary to most previous reports, It suggests that the presence of photoresist will substantially affect the plasma charging during ashing process, especially for devices with ultrathin gate oxides.
Elastic interaction between screw dislocations and a circular surface crack
(1997-03-31)
Lin, KM
;
Lin, HC
;
Chen, KC
;
Chang, HL
;
材料科學與工程學系
The behaviour of a screw dislocation around a circular surface crack was analyzed using the conformal mapping method. The effects of the crack length l and its radius of curvature R on the shielding effect and the strain energy were discussed in detail. It was found that for a dislocation being fixed at a constant distance from the crack tip and located on a plane tangent to crack surface at the tip, there exists a critical crack length l* corresponding to a maximum shielding effect induced by the dislocation on the circular surface crack. The l* increases with R and approaches infinity as the crack becomes planar (i.e. R --> infinity). The shielding effect vanishes as the crack disappears. It increases rapidly with l if 0 < l much less than l*, regardless of R. After reaching the maximum, it decreases slightly for larger R but significantly for smaller R as the crack becomes longer. The shielding is more pronounced for larger R than that for smaller R, with the difference increasing with crack length. As a result, a surface microcrack propagates initially in a rather brittle manner then becomes more ductile. When the crack gets longer, it still keeps ductile for a less curved or a planar crack but becomes relatively brittle for a severely curved crack. In addition, the strain energy is also significantly influenced by crack length and increases rapidly with l when l is rather small, regardless of R. With increasing l, it becomes less affected by l, and the variation with R is still not obvious, with larger R corresponding to a slightly higher strain energy. (C) 1997 Elsevier Science S.A.
The role of resist for ultrathin gate oxide degradation during O-2 plasma ashing
(1997-05-01)
Chien, CH
;
Chang, CY
;
Lin, HC
;
Chiou, SG
;
Huang, TY
During ashing process, resist has been intuitively regarded as a protection layer and deliberately removed in previous studies by wet process prior to plasma exposure in an effort to amplify the damage effect, Recently, we found instead that resist does not simply act as a protection layer, This newly observed phenomenon cannot be explained by the well-known electron shading effect which should not affect the area-intensive antenna structure used in our study, In this letter, we hypothesize that this resist-related charging damage is determined by the plasma potential adjustment difference between those devices with and without resist overlayer, The experimental results show a good correlation with our explanation, To be specific, severe antenna area ratio (ARR) dependent degradation of thin gate oxide is induced during the initial ashing stage while the resist is still on the electrodes, not during the overashing period.
Synthesis of diacetal trioxa-cage compounds via a sequential cyclization reaction of norbornene derivatives induced by electrophiles
(1997-09-05)
Wu, HJ
;
Tsai, SH
;
Chern, JH
;
Lin, HC
;
應用化學系
The synthesis of diacetal trioxa-cage compounds via a sequential cyclization reaction of norbornene derivatives induced by electrophiles in a short sequence is reported. Treatment of the norbornene derivatives 2a-d and 10b with I-2 in aqueous THF in the presence of KI at 25 degrees C regioselectively gave the iodo-cage compounds 3a-d and 11 in 80-90% yields, respectively, via a iodine-induced sequential cyclization reaction. No detectable amount of other regioisomers or monocyclization products was obtained. The synthesis of triora-cages 14a-e was accomplished from 3a-d and 11 in a two-step sequence. Treatment of diacylnorbornenes 15a-f with I-2 in aqueous THF at 25 degrees C regioselectively and stereoselectively gave the sequential cyclization products 16a-f, respectively, which were converted in one step to the diacetal trioxa-cages 24a-f in high yields. The structure of these trioxa-cages was proven by X-ray analysis of the crystalline compound 14e. Other electrophiles, such as bromine, m-CPBA, and Hg(OAc)(2), were also found to be effective for the sequential cyclization reaction. Oxymercuration of 15a-f and 2a-c with Hg(OAc)(2) in aqueous THF followed by reduction with NaBH4 at 25 degrees C gave compounds 28a-f and 30b,d,c in high yields, respectively.
Second-order nonlinearities and crystal structures of methylsulfonyl- and phenylsulfonyl-substituted thiophene imino dyes
(1996-05-07)
Chou, SSP
;
Sun, DJ
;
Lin, HC
;
Yang, PK
;
光電工程研究所
A simple synthesis of sulfone-substituted thiophene imino dyes 5 and 6 and their UV-VIS absorptions, second-order nonlinear optical properties, X-ray crystal structures and thermal stabilities are described.
Growth and X-ray characterization of an InN film on sapphire prepared by metalorganic vapor phase epitaxy
(1997-12-15)
Chen, WK
;
Pan, YC
;
Lin, HC
;
Ou, J
;
Chen, WH
We report the successful growth of an InN film by metalorganic vapor phase epitaxy. The film quality is found to be strongly dependent on the growth temperature and the TMIn reactant flow rate. The best quality epilayer was obtained at 375 degrees C under a high V/III ratio growth environment. It exhibits a FWHM of the X-ray rocking curve as narrow as 96 arcsec: which explains the superior crystalline quality of our epitaxial film.
Photoluminescence studies of GaN films of different buffer layer and doping concentration
(1998-02-01)
Shen, CC
;
Shu, CK
;
Lin, HC
;
Ou, J
;
Chen, WK
Photoluminescence (PL) measurements of GaN films with various buffer thicknesses and Si-doping concentrations have been carried out. PL response of one specific sample was studied for temperature dependence. The results showed that the band gap energy reduction is linearly proportional to the temperature increase with a slope of similar to-4 x 10(-4) eV.K-1 and that the activation energies for donor-bound and acceptor-bound exciton transitions are 15 and 18 meV, respectively. In Si-doped GaN films, the PL data indicated that the reduced gap depends on the third power of carrier concentration as n(1/3). We also obtained a concentration coefficient of 2.34 x 10(-4) eV.cm and a band gap energy of 3.426 eV in the undoped GaN film.
A study on the radiation hardness of flash cell with horn-shaped floating-gate
(1997-09-01)
Huang, TY
;
Jong, FC
;
Chao, TS
;
Lin, HC
;
Leu, LY
The effects of radiation on the characteristics of split-gate electrical erasable programmable read only memory (EEPROM)/flash cells with recently-proposed horn-shaped floating gates are studied in terms of cell read current; data retention, cycling endurance, program/erase efficiency, threshold voltage and junction leakage. Our results show that the cells appear to survive after 1 Mrad (Si) Co-60 irradiation. Moreover, the after-irradiation cell read current actually increases in the ''erase'' (i.e., low-threshold voltage, high-conducting) state (i.e., improves), albeit the cell read current also increases in the ''program'' (i.e., high-threshold voltage, low-conducting) state (i.e., a degradation). Our results also show that, despite an improvement in the initial read current in the ''erase'' state immediately after radiation, the write/erase cycling endurance of the flash cells is significantly impeded after irradiation, due to a much faster ''window closure'' rate in the ''erase'' state, although the cell read current is found to remain relatively stable in the ''program'' state after cycling.
Interfacial abruptness in Si/SiGe heteroepitaxy grown by ultrahigh vacuum chemical vapor deposition
(1997-09-01)
Tsai, WC
;
Chang, CY
;
Jung, TG
;
Chang, TC
;
Lin, HC
High-quality Si/Si1-xGex strained-layer superlattices have been grown in the temperature range 525 degrees C-550 degrees C by ultrahigh vacuum chemical vapor deposition. We employed X-ray reflection and high-resolution double-crystal X-ray diffraction measurements to study the dimensional and compositional variations in a Si/Si1-xGex superlattice. From the X-ray reflection results, the interfacial roughness of Si layers on SiGe, and SiGe layers on Si, is 0.1nm for growth at 525 degrees C and 0.2nm for growth at 550 degrees C. A simple model for estimating the interfacial abruptness of Si/Si1-xGex heterojunctions is proposed. In this model, a transition region with a linearly graded Ge composition is assumed to exist at both Si/Si1-xGex interfaces. The Ge composition x of a Si/Si1-xGex superlattice is found to increase with the growth time at a constant gas phase composition. This phenomenon can be explained by this model, and the thickness of the transition region and the transition time can be extracted from these fitting results. The transition thicknesses are found to be about 0.3-0.7nm for growth at 525 degrees C and 1-1.5nm for growth at 550 degrees C.
Characterization of antenna effect by nondestructive gate current measurement
(1996-08-15)
Lin, HC
;
Chien, CH
;
Huang, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A novel method is proposed for the effective characterization of plasma-charge-induced damage on thin gate oxides. We have found that the gate current measured at V-g(gate voltage) = V-th(threshold voltage) under a low drain bias (e.g., 0.1 V) is a good indicator of the damage. Since the proposed method requires only low bias voltages, it does not cause additional damage to the devices. The proposed gate current measurement is also easy to incorporate to device measurement routines without an extra stressing step, and thus provides a simple and efficient damage indicator for studying plasma-charge-induced damage.

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