學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Search Results

Now showing 1 - 10 of 16

A vector-based spatial model for landfill siting
(1998-02-01)
Lin, HY
;
Kao, JJ
;
環境工程研究所
;
Institute of Environmental Engineering
An inappropriate landfill site may have negative environmental, economic or ecological impacts. Therefore, landfill siting should carefully consider various factors and regulations and evaluate a significant amount of spatial data. However, processing of spatial information for various siting factors is tedious. Digitized data is thus frequently used for improving data processing and analysis efficiency. Vector-based data are composed of points, lines and polygons, which express gee-referenced attributes of the real world. Compared to raster-based data, although describing real world spatial information more precisely, the lack of uniformity makes vector-based data difficult to use with a mathematical optimization model. In this study, a mixed-integer spatial optimization model is developed based on vector-based data to assist decision makers in finding a suitable site from a siting area. Major factors considered in the model include impacts on the environment, economic efficiency, and site compactness. A sample case is provided to demonstrate the effectiveness of the model. (C) 1998 Elsevier Science B.V.
Comparison of N-2 and NH3 plasma passivation effects on polycrystalline silicon thin-film transistors
(1998-07-01)
Lee, YS
;
Lin, HY
;
Lei, TF
;
Huang, TY
;
Chang, TC
The passivation effects of pure N-2 plasma on polycrystalline silicon (poly-Si) thin-film transistors (TFTs) have been studied and compared with those of NH3 plasma. We found that, similar to the recently-proposed NH3 plasma passivation, N-2 plasma passivation can also effectively improve device parameters such as field effect mobility, threshold voltage subthreshold swing, off current, and on/off current ratio. While the improvement of NH3-passivated devices can be attributed to both hydrogen and nitrogen passivation effects, nitrogen passivation alone is mainly responsible for the improvement of N-2-passivated devices. Zn addition, we round that N-2-passivated devices exhibit much better hot-carrier reliability than NH3-passivated devices. The better hot-carrier reliability of N-2-passivated devices can be explained by the formation of strong Si-N bonds which are difficult to break, while effectively eliminating the weaker N-H bonds, which are inevitable in NH3-passivated devices. The results of a Fourier. transform infrared (FTIR) spectrum analysis performed in this study are consistent with this proposition.
Suppression of fluorine penetration by use of in situ stacked chemical vapor deposited tungsten film
(1999-08-01)
Chang, KM
;
Deng, IC
;
Lin, HY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
In this study, amorphous-like tungsten films were deposited by a chemical vapor deposition (CVD) process. The deposited film has shown reduced resistance compared with WSi2, and it also blocked the fluorine atoms from diffusing into the gate oxide. Furthermore, when the amorphous-like tungsten film was deposited prior to a typical CVD tungsten film with a columnar structure, it not only showed excellent barrier characteristics in impeding fluorine impurities, but its resistance was also substantially lower than a single layer of a-W film. It is also found in our work that a bilayer film containing typical CVD tungsten/amorphsus-like CVD tungsten is a better wordline structure due to its extraordinarily low resistivity and low fluorine contamination. (C) 1999 The Electrochemical Society. S0013-4651(98)11-071-6. All rights reserved.
Enhanced spatial model for landfill siting analysis
(1999-09-01)
Lin, HY
;
Kao, JJ
;
環境工程研究所
;
Institute of Environmental Engineering
A landfill siting analysis typically requires evaluating various rules, factors, constraints, and numerous spatial data. A modern geographical information system, although capable of rapidly processing a massive amount of spatial data, lacks the ability to locate an optimal site when compactness and other factors are simultaneously evaluated. A previously developed grid-based model could not be applied to resolve this inability for irregularly shaped spatial data. Therefore, an enhanced spatial siting model is proposed herein for general spatial data. A compactness index is applied to ensure the integrity of selected sites. Two case studies are presented to demonstrate the applicability of the proposed model. The proposed model and two models developed previously are compared in the first case study based on the single factor of land cost. A single factor model is perhaps quite unacceptable with respect to other factors. The second case study is thus presented to demonstrate the flexibility of the model for considering additional factors, land slope, and road network accessibility. Moreover, results obtained from various models and siting factors are compared and discussed.
A novel methodology for extracting effective density-of-states in poly-Si thin-film transistors
(2004)
Lin, HC
;
Yeh, KL
;
Lee, MH
;
Su, YC
;
Huang, TY
A novel methodology that greatly simplifies the procedure of extracting the effective density-of-states (DOS) in polycrystalline-Si thin-film transistors (poly-Si TFTs) is proposed and demonstrated. The characterization is performed on a Schottky barrier (SB) TFT with electrical source/drain extensions induced by a field-plate. Only one single device and two simple subthreshold I-V measurements at room temperature are needed for full band-gap DOS extraction. Impacts of different process treatments are clearly resolved using this methodology.
Two-photon resonance assisted huge nonlinear refraction and absorption in ZnO thin films
(2005-02-01)
Lin, JH
;
Chen, YJ
;
Lin, HY
;
Hsieh, WF
;
光電工程學系
Optical nonlinearities of ZnO thin films, made by laser deposition, were investigated by the Z-scan method using a mode-locked femtosecond Ti:sapphire laser. The measured bound-electron nonlinear index of refraction gamma and the two-photon absorption coefficient beta at near-IR wavelengths show an enormous enhancement compared with measurements on bulk ZnO at 532 nm. The results reveal that two-photon resonance to the band edge and exciton energy level is responsible for the nonlinear absorption and that the free carrier induced the optical nonlinearity. With the excitation wavelength operated between 810 to 840 nm, a negative beta value is measured due to the saturation of linear absorption of the defect states. Finally, we compared the values of beta from the closed aperture Z-scan data (by considering the multi-photon absorption induced thermal nonlinearity) with those obtained from the open aperture Z-scan data. The results show that nonlinear refraction in the near-IR region is dominated by the bound-electron and free-carrier effect, although the thermal optical nonlinearity cannot be completely ignored. (C) 2005 American Institute of Physics.
Grid-based heuristic method for multifactor landfill siting
(2005-10-01)
Lin, HY
;
Kao, JJ
;
環境工程研究所
;
Institute of Environmental Engineering
Siting a landfill requires the processing of a large amount of spatial data. However, the manual processing of spatial data is tedious. A geographical information system (GIS), although capable of handling spatial data in siting analyses, generally lacks an optimization function. Optimization models are available for use with a GIS, but they usually have difficulties finding the optimal site from a large area within an acceptable computational time, and not easily directly available with a raster-based GIS. To overcome this difficulty, this study developed a two stage heuristic method. Multiple factors for landfill siting are considered and a weighted sum is computed for evaluating the suitability of a candidate site. The method first finds areas with significantly high potentialities and then applies a previously developed mixed-integer programming model to locate the optimal site within the potential areas, and can significantly reduce the computational time required for resolving a large siting problem. A case study was implemented to demonstrate the effectiveness of the proposed method, and a comparison with the previously developed model was provided and discussed.
A compact DSP core with static floating-point arithmetic
(2006-02-01)
Lin, TJ
;
Lin, HY
;
Chao, CM
;
Liu, CW
;
Jen, CW
A multimedia system-on-a-chip (SoC) usually contains one or more programmable digital signal processors (DSP) to accelerate data-intensive computations. But most of these DSP cores are designed originally for standalone applications, and they must have some overlapped (and redundant) components with the host microprocessor. This paper presents a compact DSP for multi-core systems, which is fully programmable and has been optimized to execute a set of signal processing kernels very efficiently. The DSP core was designed concurrently with its automatic software generator based on high-level synthesis. Moreover, it performs lightweight arithmetic-the static floating-point (SFP), which approximates the quality of floating-point (FP) operations with the hardware similar to that of the integer arithmetic. In our simulations, the compact DSP and its auto-generated software can achieve 3X performance (estimated in cycles) of those DSP cores in the dual-core baseband processors with similar computing resources. Besides, the 16-bit SFP has above 40 dB signal to round-off noise ratio over the IEEE single-precision FP, and it even outperforms the hand-optimized programs based on the 32-bit integer arithmetic. The 24-bit SFP has above 64 dB quality, of which the maximum precision is identical to that of the single-precision FP. Finally, the DSP core has been implemented and fabricated in the UMC 0.18 mu m 1P6M CMOS technology. It can operate at 314.5 MHz while consuming 52mW average power. The core size is only 1.5 mmx1.5 mm including the 16 KB on-chip memory and the AMBA AHB interface.
Fabrication of thin film transistors by chemical mechanical polished polycrystalline silicon films
(1996-03-01)
Chang, CY
;
Lin, HY
;
Lei, TF
;
Cheng, JY
;
Chen, LP
A top-gate p-channel polycrystalline thin film transistor (TFT) has been fabricated using the polycrystalline silicon (poly-Si) film as-deposited by ultrahigh vacuum chemical vapor deposition (UHV/CVD) and polished by chemical mechanical polishing (CMP), In this process, long-term recrystallization in channel films is not needed. A maximum field effect mobility of 58 cm(2)/V-s, ON/OFF current ratio of 1.110(7), and threshold voltage of -0.54 V were obtained. The characteristics are not poor. In this work, therefore, we have demonstrated a new method to fabricate poly-Si TFT's.
Effect of Ge incorporation on the performance of p-channel polycrystalline Si1-xGex thin-film transistors
(1996-05-01)
Lin, HC
;
Lin, HY
;
Chang, CY
;
電控工程研究所
;
奈米中心
In this study, p-channel polycrystalline silicon-germanium thin-film transistors (poly-Si1-xGex TFTs) with different Ge contents in the channel layer were fabricated and characterized. A novel device process was developed to fabricate the test samples. The device structure utilized the in situ boron-doped poly-Si0.79Ge0.21 with an extremely low resistivity (below 2 m Omega cm) as the source/drain and the undoped poly-Si (or Si1-xGex) as the channel layer. It is observed that the addition of Ge atoms in the channel would significantly increase the amount or trap density at grain boundaries thus degrading the device performance. Based on these results, we recommend the use of poly-Si1-xGex source/drain to reduce the contact resistance but do not recommend that it is appropriate to replace poly-Si as the channel material of TFTs.

學術出版;;Publications

Browse

Filters

Settings

Sort By

Results per page

🏛️國立陽明交通大學機構典藏

Search Results