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Spectral analysis on pounding probability of adjacent buildings
(2001-07-01)
Lin, JH
;
Weng, CC
;
土木工程學系
;
Department of Civil Engineering
Presented herein is a spectral approach to evaluate the seismic pounding probability of two adjacent buildings simulated by multidegree-of-freedom systems and separated by a minimum code-specified separation during a period of time. The analytical approach is based on random vibration theory and total probability theory. Numerical simulations of 36 cases are presented in this study. Results of this investigation reveal that the period ratio of the adjacent buildings plays a major role that affects the pounding risk of adjacent buildings. Also noted is that the effect of period ratio on pounding risk has not yet been taken into account in the seismic pounding related provisions of the Uniform Buildings Code. (C) 2001 Elsevier Science Ltd. All rights reserved.
Cavity configurations for soft-aperture Kerr-lens mode locking and multiple-period bifurcations in Ti : sapphire lasers
(2001-08-01)
Lin, JH
;
Wei, MD
;
Hsieh, WF
;
光電工程學系
;
Department of Photonics
We find that soft-aperture Kerr-lens mode locking (SAKLM) in a Ti:sapphire laser always takes place around certain discrete cavity configurations accompanied by peculiar beam patterns. By correlating the superposition of proper transverse modes to the observed beam patterns and fitting the beat frequencies to the resonance equation, we discovered that the patterns for SAKLM are formed by phase locking of the fundamental mode with specific degenerate transverse modes that occur near different degenerate cavity configurations. As predicted by the stability analysis, period-3 and period-2 SAKLM does occur around the 1/3- and 1/4-degenerate cavity configurations, which cannot be fully explained in terms of total mode locking of TEM00 and TEM01 modes. (C) 2001 Optical Society of America.
A novel high-performance poly-silicon thin film transistor with a self-aligned thicker sub-gate oxide near the drain/source regions
(2001-10-01)
Chang, KM
;
Chung, YH
;
Lin, GM
;
Lin, JH
;
Deng, CG
In this letter, a novel high-performance poly-silicon thin-film transistor (poly-Si TFT) with a self-aligned thicker sub-gate oxide near the drain/source regions is proposed. Poly-Si TFTs with this new structure have been successfully fabricated and the results demonstrate a higher on-off current ratio of 5.9 x 10(6) and also shows the off-state leakage current 100 times lower than those of the conventional ones at V-GS = -15 V and V-DS = 10 V. Only four photo-masking steps are required and fully compatible with the conventional TFT fabrication processes. This novel structure is a good candidate for the further high-performance large-area device applications.
Enhanced degradation in polycrystalline silicon thin-film transistors under dynamic hot-carrier stress
(2001-10-01)
Chang, KM
;
Chung, YH
;
Lin, GM
;
Deng, CG
;
Lin, JH
We address the mechanisms responsible for the enhanced degradation in the polysilicon thin-film transistors under dynamic hot-carrier stress. Unlike the monotonic decrease of maximum transconductance (G(m max)) in static stress, G(m max) in dynamic stress is initially increased due to the channel shortening effect by holes injected into the gate oxide near the drain region and then decreased due to tail states generation at the gate oxide/channel interface and grain boundaries. The threshold voltage variations are dominated by two degradation mechanisms: 1) breaking of weak bonds and 2) breaking of strong bonds to obey the power-time dependence law with a slope of 0.4. The degradation of the sub-threshold slope is attributed to intra-grain bulk states generation.
Probability analysis of seismic pounding of adjacent buildings
(2001-10-01)
Lin, JH
;
Weng, CC
;
土木工程學系
;
Department of Civil Engineering
The need to investigate the level of seismic pounding risk of buildings is apparent in future building code calibrations. In order to provide further insight into the pounding risk of adjacent buildings, this study develops a numerical simulation approach to estimate the seismic pounding risk of adjacent buildings separated by a minimum code-specified separation distance during a certain period of time. It has been demonstrated that the period ratio of adjacent buildings is an important parameter that affects the pounding risk of adjacent buildings. However, there is no specific consideration for the period ratio in the related seismic pounding provisions of the 1997 Uniform Building Code. Results also reveal that, for two adjacent buildings, the probability distribution of required distance to avoid seismic pounding fits very well with the type I extreme value distribution. Copyright (C) 2001 John Wiley & Sons, Ltd.
A study on seismic pounding probability of buildings in Taipei metropolitan area
(2002-03-01)
Lin, JH
;
Weng, CC
;
土木工程學系
;
Department of Civil Engineering
This study investigates the seismic pounding probability of buildings in the Taipei metropolitan area. Detailed procedures of the analytical method are presented. The results indicate that the building separation specified in the Seismic Provisions of the 1997 Taiwan Building Code (TBC'97) generally provides a relatively conservative estimate compared to that specified in the 19,94 Uniform Building Code (UBC'94) for the required distance to avoid pounding. This observation is demonstrated by comparing both the separation distance and/or the pounding probability of adjacent buildings based on the TBC'97 with those based on the UBC'94. The comparison results also reveal that the building separation distance specified by the TBC'97 is 1.6 times that specified by the UBC94 for the same building and site soil condition. If a reduction coefficient of 0.375 is adopted instead of the 0.6 specified in the TBC'97 to consider the effect of vibration phase difference of adjacent buildings, the critical pounding risk of the TBC'97 and the UBC'94 will be similar.
Characterization of the novel polysilicon TFT with a subgate coupling structure
(2002-04-01)
Chang, KM
;
Chung, YH
;
Deng, CG
;
Chung, YF
;
Lin, JH
We have proposed and fabricated a novel polysilicon thin film transistor (poly-Si TFT) with a subgate coupling structure that behaves as an offset gated structure in the OFF state while acting as a conventional nonoffset structure in the ON state. The OFF state leakage current of the new TFT is two orders of magnitude lower than that of the conventional nonoffset TFT, while the ON current of the new TFT is one order of magnitude higher than that of the offset TFT and is almost identical to that of the conventional non-offset TFT. The ON/OFF current ratio of the new TFT is greatly improved by two orders of magnitude. No additional photo-masking steps are required to fabricate the subgate of the new TFT and its fabrication process is fully the same as the conventional nonoffset TFTs.
Interfacial mechanism studies of electroless plated Cu films on a-Ta : N layers catalyzed by PIII
(2002-05-01)
Lin, JH
;
Lee, TL
;
Hsieh, WJ
;
Lin, CC
;
Kou, CS
This study evaluated the interface reaction and crystallography of the electroless plated copper film (similar to0.2 mum thick) catalyzed by plasma immersion ion implanted (PIII) Pd on the 150-Angstrom-thick amorphous tantalum nitride (a-Ta:N) barrier layer. The copper plated specimens were annealed at various temperatures in an ambient atmosphere of 90% nitrogen + 10% hydrogen mixed gases. Sheet resistivity, Auger electron spectroscopy (AES) analyses showed that the PIII Pd atoms were diffused into the copper layer from the interface of a-Ta:N and copper layers after 500 degreesC annealing for 1 h. Results based on x-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) showed a phase transformation from a-Ta:N into crystallized Ta2N phase at annealing. The Cu(111) texture was strengthened at 300degreesC annealing for I h because of the relaxation of the residual stress and recovery of the copper film. The texture was reduced at the 500 degreesC annealing for I h because of the copper grain growth. The adhesion strength of copper films on a-Ta:N barrier layer was enhanced by the annealing because of the interdiffusion of copper layer, Pd clusters and a-Ta:N barrier layer. The annealing temperatures lower than 300 degreesC help to reduce the electric resistivity of copper film, to strengthen the Cu(111) preferred orientation. and to enhance the adhesion strength of copper films on a-Ta:N layer. However, the specimen annealed at 500 'C manifested the diffusion of Pd atoms into the copper film and resulted in a significant increase of the electric resistivity of copper film. (C) 2002 American Vacuum Society.
A new process-variation-immunity method for extracting capacitance coupling coefficients in flash memory cells
(2002-07-01)
Cho, CYS
;
Chen, MJ
;
Lin, JH
;
Chen, CF
;
電子工程學系及電子研究所
Overestimation of capacitance coupling coefficients in flash memory cells is encountered in the subthreshold slope method. By means of a two-parameters subthreshold current model I-D = I-o exp[q(V-GB - nV(SB))/nkT], a mathematical formulation of the subthreshold swing ratio in the subthreshold slope method is constructed to isolate the measurement errors caused by process variations from the errors traditionally caused by bulk capacitance coupling. To minimize the effect of process variations, a new method is developed based on the model. In this method, the control gate voltage shift due to weak body effect is measured in flash memory cells in subthreshold, while the corresponding slope factor n is adequately deduced from threshold voltage versus source-to-substrate bias measurement in dummy devices. The corrected capacitance coupling coefficients show large improvements compared to the design values, and the updated errors are found to be close to that caused solely by bulk capacitance coupling. The method is also fast since only a small source-to-substrate bias of 0.1 V is needed for implementation of weak body effect, and thereby it can be used as an in-line monitor of capacitance coupling coefficients.
Harmonic mode locking and multiple pulsing in a soft-aperture Kerr-lens mode-locked Ti : sapphire laser
(2002-10-15)
Lin, JH
;
Hsieh, WF
;
Wu, HH
;
光電工程學系
;
Department of Photonics
We report the observation of harmonic mode locking and multiple pulse operations in a soft-aperture Kerr-lens mode-locked Ti:sapphire laser by varying the total intra-cavity dispersion. Second, third, and fourth order harmonic mode locking as well as multiple pulsing with interpulse separation ranging from femtosecond to nanosecond are observed. The laser is characterized in these regimes in terms of wavelength, bandwidth, pulsewidth, average and peak powers as functions of group velocity dispersion. By introducing a loss difference term into gain dynamic analysis, we conclude that gain depletion and recovery mechanisms are responsible for the underlying physics of current observations. (C) 2002 Elsevier Science B.V. All rights reserved.

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