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Author: search.filters.author.Lin, Kung-LiangSubject: search.filters.subject.MOCVD

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Now showing 1 - 5 of 5
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    Effect of Multiple AlN Layers on Quality of GaN Films Grown on Si Substrates
    (2014-11-01)
    Binh Tinh Tran
    ;
    Lin, Kung-Liang
    ;
    Sahoo, Kartika Chandra
    ;
    Chung, Chen-Chen
    ;
    Chi-Lang Nguyen
    In this paper, we present the effect of multiple thin high-low-high-temperature AlN (HLHT AlN) nucleation layers on GaN film quality. A 1.9-mu m-thick GaN film gown on Si (111) substrate shows that the multiple HLHT AlN nucleation layers have a significant effect on GaN film quality. This process also plays a very important role in the growth of GaN films on Si (111) substrates. A high quality GaN film with a uniformly faceted surface with very low dislocation densities is obtained at the optimized multiple HLHT AlN nucleation layers 50-nm thick at a temperature of 1010-800-1010 degrees C and a growth pressure of 50 Torr.
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    Growth of GaN films on circle array patterned Si (111) substrates
    (2014-09-01)
    Lin, Kung-Liang
    ;
    Binh Tinh Tran
    ;
    Chung, Chen-Chen
    ;
    Chang, Edward-Yi
    ;
    材料科學與工程學系
    Low stress, low defect density GaN was successfully grown on circle array patterned Si (111) substrate using AlN as the buffer followed by two steps growth of the GaN film. Raman measurement shows a reduction of in plane biaxial stress for the GaN film grown on patterned substrate. The slight blueshifL of PL peaks further provides evidence that the tensile stress in the GaN film was relaxed, It is believed that the grain boundaries of the polycrystalline AlN buffer layer and the dislocations in the GaN film grown helped to relieve the stress induced by the lattice and the thermal coefficient mismatches during growth. (C) 2014 Elsevier By. All rights reserved.
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    Characterization of AlInN Layer Grown on GaN/Sapphire Substrate by MOCVD
    (2013-02-01)
    Huang, Wei-Ching
    ;
    Chang, Edward-Yi
    ;
    Wong, Yuen-Yee
    ;
    Lin, Kung-Liang
    ;
    Hsiao, Yu-Lin
    The AlInN layers have been grown with different growth parameters on GaN/sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The effects of growth parameters such as pressure and temperature on the Al incorporation during AlInN material growth have been investigated. The results showed that lower pressure provides a tendency for higher Al incorporating in the AlInN layer. Besides, as the temperature was increased from 700 degrees C to 780 degrees C, an estimation of 4% reduction on the indium composition has been observed for each 20 degrees C increment. XRD analysis showed that the best crystal quality of AlInN occured at 80% Al composition because of the higher lattice matching with GaN. Based on the above criteria, an Al0.8In0.2N/GaN HEMT device with 2 mu m gate length has also been fabricated. The DC characteristics showed a saturated current, I-dss of 280 mA/mm and transconductance of 140 mS/mm.
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    Fabrication and characterization of n-In0.4Ga0.6N/p-Si solar cell
    (2012-07-01)
    Tran, Binh-Tinh
    ;
    Chang, Edward-Yi
    ;
    Trinh, Hai-Dang
    ;
    Lee, Ching-Ting
    ;
    Sahoo, Kartika Chandra
    Electro-optic characteristics of a fabricated n-In0.4Ga0.6N/p-Si hetero-structure solar cell on Si substrate with Al and ITO (or Ti/Al/Ni/Au) materials for p and n-type contacts were investigated in this letter. The solar cell devices with ITO as n-type contacts were also compared to the solar cell using Ti/Al/Ni/Au as n-type contact in this study. High short-circuit current density observed for solar cell with ITO as n-type contacts due to the increased amount of light reaching the solar cell. The device with ITO contact exhibited an open-circuit voltage (V-oc) of 1.52 V and a short-circuit current density (J(sc)) of 8.68 mA/cm(2) with 54% fill factor. The conversion and external quantum efficiency (EQE) of the solar cell were 7.12 and 20.8%, respectively. Besides, a relationship between V-oc and In content in the InxGa1-xN alloys for this type of solar cell was also derived. (C) 2012 Elsevier B.V. All rights reserved.
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    Effects of Al(x)Ga(1-x)N interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor deposition
    (2010-05-01)
    Lin, Kung-Liang
    ;
    Chang, Edward-Yi
    ;
    Hsiao, Yu-Lin
    ;
    Huang, Wei-Ching
    ;
    Luong, Tien-Tung
    GaN film grown on Si substrate using multilayer AlN/Al(x)Ga(1-x)N buffer is studied by the low-pressure metal-organic chemical-vapor deposition method. The Al(x)Ga(1-x)N films with Al composition varying from 1 to 0.66 were used to accommodate the stress induced between GaN and the Si substrate during GaN growth. The correlation of the Al composition in the Al(x)Ga(1-x)N films with respect to the stress induced in the GaN film grown was studied using high-resolution x-ray diffraction, including symmetrical and asymmetrical omega/2 theta scans and reciprocal space maps. It is found that with proper design of the Al composition in the Al(x)Ga(1-x)N buffer layer, crack-free GaN film can be successfully grown on 6 in. Si (111) substrates using multilayer AlN and Al(x)Ga(1-x)N buffer layers. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3385672]