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Now showing 1 - 10 of 43

Nitride-stressor and quantum-size engineering in Ge quantum-dot photoluminescence wavelength and exciton lifetime
(2020-03-01)
Kuo, Yu-Hong
;
Chiu, Shih-Hsuan
;
Tien, Che-Wei
;
Lin, Sheng-Di
;
Chang, Wen-Hao
We report local nitride-stressor engineering in combination with quantum-size tunability in Ge quantum dots (QDs) for tailoring photoluminescence (PL) wavelength and exciton lifetime. Spherical-shaped Ge QDs with tunable diameters ranging from 25-90 nm embedded within layers of thermally-grown SiO2 and chemical-vapor-deposited Si3N4 were fabricated by thermal oxidation of lithographically-patterned poly-Si0.85Ge0.15 pillars on top of buffer layers of SiO2 and Si3N4, respectively, in a self-organization approach. The effects of local stressors and quantum confinement on the strain and optical properties of Ge QDs were systematically investigated using Raman and PL measurements. We observed that when Ge QD diameter gets smaller than 60 nm, quantum confinement sets in and has a predominant influence on PL wavelength and exciton lifetime. Our self-organized Ge QD/Si3N4 system provides a generic building block for the fabrication of active photonic devices on Si3N4 platform.
Antimonidation of ultrathin epitaxial aluminum nanofilms for metamorphic growth of Sb-based structures on GaAs substrates
(2020-04-01)
Wu, Yu-Hsun
;
Wu, Jenq-Shinn
;
Lin, Sheng-Di
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The narrow-bandgap Sb-based semiconductors find their potential in various kinds of device applications such as high-speed, low-power transistors and mid-infrared diode lasers. However, epitaxial growth on the substrates that are commercially available in large sizes (for example, GaAs and Si) faces the fundamental challenge of lattice mismatch. Different from the conventional metamorphic growth employing a thick buffer, we adopt the approach of transforming an ultrathin epitaxial aluminum (Al) nanofilm into epitaxial AlSb to serve as the template for growth of antimonide structures. It is found that the process named "antimonidation" plays a critical role in Sb-based metamorphic growth. Our experimental results provide practical usefulness for growing semiconductor devices on lattice-mismatched substrates without using thick metamorphic buffer layers. (C) 2020 The Japan Society of Applied Physics
Room-Temperature Macroscopic Coherence of Two Electron-Hole Plasmas in a Microcavity
(2020-04-16)
Jie, Qi
;
Zhang, Keye
;
Lai, Chih-Wei
;
Hsu, Feng-Kuo
;
Zhang, Weiping
Macroscopic coherence of Bose condensates is a fundamental and practical phenomenon in many-body systems, such as the long-range correlation of exciton-polariton condensates with a dipole density typically below the exciton Mott-transition limit. Here we extend the macroscopic coherence of electron-hole-photon interacting systems to a new region in the phase diagram-the high-density plasma region, where long-range correlation is generally assumed to be broken due to the rapid dephasing. Nonetheless, a cooperative state of electron-hole plasma does emerge through the sharing of the superfluorescence field in an optical microcavity. In addition to the in situ coherence of e-h plasma, a long- range correlation is formed between two 8-mu m-spaced plasma ensembles even at room temperature. Quantized and self-modulated correlation modes are generated for e-h ensembles in the plasma region. By controlling the distance between the two ensembles, multiple coupling regimes are revealed, from strong correlation to perturbative phase correlation and finally to an incoherent classical case, which has potential implications for tunable and high-temperature-compatible quantum devices.
Photon-Detection-Probability Simulation Method for CMOS Single-Photon Avalanche Diodes
(2020-01-01)
Hsieh, Chin-An
;
Tsai, Chia-Ming
;
Tsui, Bing-Yue
;
Hsiao, Bo-Jen
;
Lin, Sheng-Di
Single-photon avalanche diodes (SPADs) in complementary metal-oxide-semiconductor (CMOS) technology have excellent timing resolution and are capable to detect single photons. The most important indicator for its sensitivity, photon-detection probability (PDP), defines the probability of a successful detection for a single incident photon. To optimize PDP is a cost- and time-consuming task due to the complicated and expensive CMOS process. In this work, we have developed a simulation procedure to predict the PDP without any fitting parameter. With the given process parameters, our method combines the process, the electrical, and the optical simulations in commercially available software and the calculation of breakdown trigger probability. The simulation results have been compared with the experimental data conducted in an 800-nm CMOS technology and obtained a good consistence at the wavelength longer than 600 nm. The possible reasons for the disagreement at the short wavelength have been discussed. Our work provides an effective way to optimize the PDP of a SPAD prior to its fabrication.
Berezinskii-Kosterlitz-Thouless transition in an Al superconducting nanofilm grown on GaAs by molecular beam epitaxy
(2020-05-15)
Su, Guan-Ming
;
Wu, Bi-Yi
;
Fan, Yen-Ting
;
Kumar, Ankit
;
Chang, Chau-Shing
We have performed extensive transport experiments on a 4 nm thick aluminum (Al) superconducting film grown on a GaAs substrate by molecular beam epitaxy (MBE). Nonlinear current-voltage (I-V) measurements on such a MBE-grown superconducting nanofilm show that V similar to I-3, which is evidence for the Berezinskii-Kosterlitz-Thouless (BKT) transition, both in the low-voltage (T-BKT 1.97 K) and high-voltage regions (T-BKT 2.17 K). In order to further study the two regions where the I-V curves are BKT-like, our experimental data are fitted to the temperature-induced vortices/antivortices unbinding model as well as the dynamical scaling theory. It is found that the transition temperature obtained in the high-voltage region is the correct T-BKT as confirmed by fitting the data to the aforementioned models. Our experimental results unequivocally show that I-V measurements alone may not allow one to determine T-BKT for superconducting transition. Therefore, one should try to fit one's results to the temperature-induced vortices/antivortices unbinding model and the dynamical scaling theory to accurately determine T-BKT in a two-dimensional superconductor.
Topological Transition in a 3nm Thick Al Film Grown by Molecular Beam Epitaxy
(2019-12-27)
Kumar, Ankit
;
Su, Guan-Ming
;
Chang, Chau-Shing
;
Yeh, Ching-Chen
;
Wu, Bi-Yi
We have performed detailed transport measurements on a 3nm thick (as-grown) Al film on GaAs prepared by molecular beam epitaxy (MBE). Such an epitaxial film grown on a GaAs substrate shows the Berezinskii-Kosterlitz-Thouless (BKT) transition, a topological transition in two dimensions. Our experimental data shows that the MBE-grown Al nanofilm is an ideal system for probing interesting physical phenomena such as the BKT transition and superconductivity. The increased superconductor transition temperature (similar to 2.4K) compared to that of bulk Al (1.2K), together with the ultrathin film quality, may be advantageous for future superconductor-based quantum devices and quantum information technology.
Nano- to atomic-scale epitaxial aluminum films on Si substrate grown by molecular beam epitaxy
(2019-10-01)
Tsai, Yi-Hsun
;
Wu, Yu-Hsun
;
Ting, Yen-Yu
;
Wu, Chu-Chun
;
Wu, Jenq-Shinn
We demonstrate nano-to atomic-scale epitaxial aluminum film growth on Si(111) substrate by molecular beam epitaxy. Excellent quality of these aluminum films, including sub-nanometer surface roughness, narrow linewidth of X-ray diffraction peak, clear transmission electron diffraction, and high optical reflectivity in ultra-violet, have been obtained with a reproducible growth recipe. The atomic-scale metallic aluminum film is formed by the self-limiting oxidation on the 3-nm-thick sample in air and the metallic state is confirmed with X-ray photoemission spectroscopy. Our work paves the way to future integration of aluminum-based plasmonic and superconducting devices on Si platform. (c) 2019 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
CMOS Single-Photon Detectors for Vehicle LiDAR - Status and Trends
(2018-01-01)
Lin, Sheng-Di
;
交大名義發表
;
National Chiao Tung University
Time-Correlated Crosstalk Measurements between CMOS Single-Photon Avalanche Diodes
(2018-01-01)
Wu, Dai-Rong
;
Tsai, Chia-Ming
;
Lin, Sheng-Di
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
We investigate time-resolved crosstalk probability between single-photon avalanche diodes in CMOS technology. The time-correlated crosstalk measurements reveal an unusual double-peak feature. This behavior becomes more significant at higher excess bias voltages and shorter device-to-device distance and its physical reason will be discussed.
Epitaxial GaAs and pHEMT on aluminum-transformed AlAs nanofilms
(2018-09-01)
Cheng, Chia-Chu
;
Wu, Chu-Chun
;
Fan, Yen-Ting
;
Wu, Jenq-Shinn
;
Lin, Sheng-Di
Heterogeneous epitaxial growth between semiconductors and metals boosts novel device development and enables various applications. In this work, we have investigated the epitaxial growth of GaAs layers on top of a nanoscale aluminium-transformed AlAs film. The grown GaAs layers are single-crystalline and of highquality, that has been evidenced by using various material characterization methods and by fabricating their high-electron mobility transistors. We found that an intriguing process named as "arsenidation" of aluminium film plays a key role in the successful epitaxy. Our work opens a window for growing semiconductor/metal hetero-structures for various device applications in the future. (C) 2018 Author(s).

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