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Author: search.filters.author.Lin, Wei-HsunSubject: search.filters.subject.indium compounds

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Now showing 1 - 3 of 3
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    Transition mechanism of InAs/GaAs quantum-dot infrared photodetectors with different InAs coverages
    (2010-05-01)
    Tseng, Chi-Che
    ;
    Chung, Tung-Hsun
    ;
    Mai, Shu-Cheng
    ;
    Chao, Kuang-Ping
    ;
    Lin, Wei-Hsun
    In this article, the authors investigate the influences of different InAs coverages on the photoluminescence excitation (PLE) spectra and spectral responses of InAs/GaAs quantum-dot infrared photodetectors (QDIPs). An increase in InAs coverage would lead to an increase in energy separation between heavy-hole state and light-hole state in the wetting layer (WL) region in the QD PLE spectra. The results suggest that most of the strain resulted from the InAs/GaAs lattice mismatch may be accumulated in the WL instead of the QD region. Also observed are the similar energy separations of energy levels responsible for the intraband absorption in the PLE spectra of the QDIPs such that similar detection wavelengths are observed for the devices. [DOI:10.1116/1.3368607]
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    The transition mechanisms of a ten-period InAs/GaAs quantum-dot infrared photodetector
    (2008-11-01)
    Tseng, Chi-Che
    ;
    Chou, Shu-Ting
    ;
    Lin, Shin-Yen
    ;
    Chen, Cheng-Nan
    ;
    Lin, Wei-Hsun
    This study explores the growth and effects of a ten-period InAs/GaAs quantum-dot infrared photodetector (QDIP). With a uniform quantum-dot (QD) size distribution and a QD density of 2.8x10(10) cm(-2), this 10 K photoluminescence spectrum shows a peak energy at 1.07 eV and a narrow full width at half maximum of 31.7 meV. The QDIP exhibits an asymmetric response under different voltage polarities and a high responsivity of 1.7 A/W at -1.1 V. Another noticeable observation in the spectral response of the device is the 6 mu m peak detection wavelength with a high spectral broadening Delta lambda/lambda of 0.67. By analyses of the photoluminescence excitation spectrum and the temperature dependence of spectral response, the wide spectral response of the QDIP is attributed to the summation of transitions between QD excited states and the wetting layer states, instead of transitions between QD ground state and higher excited states.
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    The influence of In composition on InGaAs-capped InAs/GaAs quantum-dot infrared photodetectors
    (2009-09-01)
    Lin, Wei-Hsun
    ;
    Chao, Kuang-Ping
    ;
    Tseng, Chi-Che
    ;
    Mai, Shu-Cheng
    ;
    Lin, Shih-Yen
    The influence of an additional InGaAs-capped layer on the performance of InAs/GaAs quantum-dot infrared photodetectors (QDIPs) is investigated. For the device with a 15% InGaAs-capped layer, a significant response at 7.9 mu m is observed for the QDIP device. The results suggest that with the additional InGaAs-capped layer, the detection wavelengths of the InAs/GaAs QDIPs could be shifted to a longer-wavelength infrared range. A further increase in the In composition will not help to obtain an even longer-wavelength detection, which is attributed to the cancellation of a lower InGaAs state, and InAs-QD bandgap shrinkage resulted from the relaxed compressive strains of the InGaAs layer with a higher In composition.