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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Lin, Yen-KuSubject: search.filters.subject.gate recess

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    High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications
    (2017-06-01)
    Lin, Yen-Ku
    ;
    Noda, Shuichi
    ;
    Huang, Chia-Ching
    ;
    Lo, Hsiao-Chieh
    ;
    Wu, Chia-Hsun
    High-performance GaN metal-oxidesemi-conductor high-electron-mobility transistors (MOSHEMTs) using Al2O3 gate dielectric deposited by atomic layer deposition (ALD) and damage-free neutral beam etch (NBE) gate recess process for millimeter-wave power applications are demonstrated. The high-quality ALD Al2O3 reduces the gate leakage current of the device and the NBE method eliminates the plasma-induced defects in the nitride materials. The MOSHEMT device fabricated exhibits a high maximum drain current density (I-DS,I-max ) of 1.65 A/mm and a high peak extrinsic transconductance (g(m.ext) ) of 653 mS/mm. The MOSHEMT device also demonstrates excellent RF performances, including f(T)/f(MAX) = 183/191 GHz, NFmin = 2.56 dB with G(AS) = 5.61 dB at 54 GHz, and an output power density of 2.7 W/mm associated with a power-added efficiency of 20.9% and a linear power gain of 9.4 dB at 38 GHz. To the best of our knowledge, the noise performance at 54 GHz is the best reported so far for the AlGaN/GaN HEMTs.
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    AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications
    (2016-11)
    Lin, Yen-Ku
    ;
    Noda, Shuichi
    ;
    Lo, Hsiao-Chieh
    ;
    Liu, Shih-Chien
    ;
    Wu, Chia-Hsun
    The electrical performances of gate-recessed AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated using the damage-free neutral beam etching (NBE) method are demonstrated. The NBE method could eliminate the plasma-induced defects generated by irradiating ultraviolet/VUV photons in the conventional inductively coupled plasma reactive ion etching method. The AlGaN/GaN HEMT device fabricated using the new gate recess process exhibited superior electrical performances, including a maximum drain current density (I-DS,I-max) of 1.54 A/mm, low 1/f noise, a current-gain cutoff frequency (f(T)) of 153 GHz, a maximum frequency of oscillation (f(MAX)) of 167 GHz, and a minimum noise figure (NFmin) of 3.28 dB with an associated gain (G(AS)) of 5.06 dB at 54 GHz. Such superior characteristics confirm the inherent advantages of adopting the damage-free NBE process in fabricating GaN devices for millimeter-wave applications.