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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Liu, HSSubject: search.filters.subject.deep levels

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    Deep levels, electrical and optical characteristics in SnTe-doped GaSb Schottky diodes
    (1996-11-01)
    Chen, JF
    ;
    Chen, NC
    ;
    Liu, HS
    ;
    電子物理學系
    ;
    Department of Electrophysics
    The GaSb layers investigated were grown directly on GaAs substrates by molecular beam epitaxy (MBE) using SnTe source as the n-type dopant. By using admittance spectroscopy, a dominant deep level with the activation energy of 0.23-0.26 eV was observed and its concentration was affected by the Sb-4/Ga flux ratio in the MBE growth. A lowest deep-level concentration together with a highest mobility was obtained for GaSb grown at 550 degrees C under a Sb-4/Ga beam equivalent pressure (BEP) ratio around 7, which should correspond to the lowest ratio to maintain a Sb-stabilized surface reconstruction. In the Hall measurement, an analysis of the temperature-dependent mobility shows that the ionized impurity concentration increases proportionally with the sample's donor concentration, suggesting that the ionized impurity was introduced by an SnTe source. In addition, optical properties of an undoped p-, a lightly and heavily SnTe-doped GaSb layers were studied by comparing their photoluminesence spectra at 4.5K.
  • Thumbnail Image
    Item type:Item,
    Deep levels in SnTe-doped GaSb grown on GaAs by molecular beam epitaxy
    (1996-07-01)
    Chen, JF
    ;
    Chen, NC
    ;
    Liu, HS
    ;
    交大名義發表
    ;
    電子物理學系
    A dominant deep level with an activation energy of 0.23-0.26 eV was observed by admittance spectroscopy in SnTe-doped GaSb layers grown directly on GaAs substrates by molecular beam epitaxy (MBE). The Sb-4/Ga Bur ratio was found to affect the Hall mobility and the concentration of the deep level in a similar way, with an optimal beam equivalent pressure ratio of around 7 obtained for GaSb grown at 550 degrees C, which should correspond to the lowest ratio at which a Sb-stabilized surface reconstruction can be maintained. This electron level is commonly detected in n-type (SnTe-, S- and Te-doped) GaSb, but not in undoped p-type GaSb, suggesting that the level is not a simple native defect, but may be connected with the impurity used for n-type doping of GaSb.
  • Thumbnail Image
    Item type:Item,
    Deep levels, electrical and optical characteristics in SnTe-doped GaSb Schottky diodes
    (1996-11-01)
    Chen, JF
    ;
    Chen, NC
    ;
    Liu, HS
    ;
    交大名義發表
    ;
    電子物理學系
    The GaSb layers investigated were grown directly on GaAs substrates by molecular beam epitaxy (MBE) using SnTe source as the n-type dopant. By using admittance spectroscopy, a dominant deep level with the activation energy of 0.23-0.26 eV was observed and its concentration was affected by the Sb-4/Ga flux ratio in the MBE growth. A lowest deep-level concentration together with a highest mobility was obtained for GaSb grown at 550 degrees C under a Sb-4/Ga beam equivalent pressure (BEP) ratio around 7, which should correspond to the lowest ratio to maintain a Sb-stabilized surface reconstruction. In the Hall measurement, an analysis of the temperature-dependent mobility shows that the ionized impurity concentration increases proportionally with the sample's donor concentration, suggesting that the ionized impurity was introduced by an SnTe source. In addition, optical properties of an undoped p-, a lightly and heavily SnTe-doped GaSb layers were studied by comparing their photoluminesence spectra at 4.5K.