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Large Photoresponsivity in the Amorphous-TiO2/SrRuO(3)Heterostructure
(1970-01-01)
Liu, Heng-Jui
;
Huang, Chin-Han
;
Chen, Cheng-Ying
;
Hsiao, Sheng-Wei
;
Chen, You-Sheng
Thin-film heterostructures are effective in enhancing the performance or triggering novel physical phenomena of optoelectronic applications. For example, the epitaxial heterostructures of ultraviolet-light-sensitive TiO(2)with metallic SrRuO(3)can acquire visible-light functionalities using the hot carrier injection mechanism. Therefore, the TiO2/SrRuO(3)heterostructure system has recently attracted increasing interest. Herein, the amorphous-TiO2/SrRuO(3)heterostructure is fabricated and compared to the epitaxial TiO2/SrRuO3. As opposed to the occurrence of the visible-light photovoltaic effect in the epitaxial TiO2/SrRuO3, the amorphous-TiO2/SrRuO(3)heterostructure herein exhibits different optoelectronic functionality, specifically the photoresistor behavior. The amorphous-TiO2/SrRuO(3)heterostructure achieves a photoresponsivity of 6.56 A W(-1)at 1 V. Such a performance is hardly obtained in typical oxide-based photoresistors. The analyses of the crystalline and electronic structures show that it is due to the defect-induced high electron doping in the amorphous TiO(2)with hot carrier injection mechanism. This study discusses the correlation between the hot carrier injection and band diagram, which provides more degrees of freedom in designing potential optoelectronic devices.
Manipulating magnetoelectric energy landscape in multiferroics
(2020-06-05)
Huang, Yen-Lin
;
Nikonov, Dmitri
;
Addiego, Christopher
;
Chopdekar, Rajesh, V
;
Prasad, Bhagwati
Magnetoelectric coupling at room temperature in multiferroic materials, such as BiFeO3, is one of the leading candidates to develop low-power spintronics and emerging memory technologies. Although extensive research activity has been devoted recently to exploring the physical properties, especially focusing on ferroelectricity and antiferromagnetism in chemically modified BiFeO3, a concrete understanding of the magnetoelectric coupling is yet to be fulfilled. We have discovered that La substitutions at the Bi-site lead to a progressive increase in the degeneracy of the potential energy landscape of the BiFeO3 system exemplified by a rotation of the polar axis away from the < 111 > (pc) towards the < 112 > (pc) discretion. This is accompanied by corresponding rotation of the antiferromagnetic axis as well, thus maintaining the right-handed vectorial relationship between ferroelectric polarization, antiferromagnetic vector and the Dzyaloshinskii-Moriya vector. As a consequence, La-BiFeO3 films exhibit a magnetoelectric coupling that is distinctly different from the undoped BiFeO3 films. BiFeO3 has a wide application but the impact of rare-earth substitution for the evolution of the coupling mechanism is unknown. Here, the authors reveal the correlation between ferroelectricity, antiferromagnetism, a weak ferromagnetic moment, and their switching pathways in La-substituted BiFeO3.
Anisotropic superconductivity induced by periodic multiferroic domain patterns
(2019-12-06)
Huang, Yen-Lin
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Huang, Bo-Chao
;
Wang, Yan-Ting
;
Xue, Fei
;
Lin, Jheng-Cyuan
The competition between order parameters, such as ferroelectricity, ferromagnetism, and superconductivity, is one of the most fascinating topics in condensed matter physics. Here, we report intriguing anisotropic superconductivity in YBa2Cu3O7-x films induced by a multiferroic, BiFeO3, with periodic domain patterns. The anisotropic superconductivity was investigated by transport measurements and supported by phase-field simulations, and then the detailed local electronic structures were revealed by cross-sectional scanning tunneling microscopy. We found that the oxygen redistribution in YBa2Cu3O7-x modulated by the ferroelectric polarization in BiFeO3 was the key mechanism driving this anisotropic superconductivity. The presented heteroarchitecture of a high-temperature superconductor and a domain-engineered multiferroic provides a new approach to tune superconductivity and offers potential advantages for the design of future multifunctional devices.
Observation of oxygen pyramid tilting induced polarization rotation in strained BiFeO3 thin film
(1970-01-01)
Song, Dongsheng
;
Liu, Heng-Jui
;
Kovacs, Andras
;
Dunin-Borkowski, Rafal E.
;
Chu, Ying-Hao
Oxygen octahedral tilting has been recognized to strongly interact with spin, charge, orbital, and lattice degrees of freedom in perovskite oxides. Here, we observe a strain-driven stripe-like morphology of two supertetragonal (monoclinic Cc and Cm) phases in the strained BiFeO3/LaAlO3 thin films. The two supertetragonal phases have a similar giant axial ratio but differences in oxygen pyramid tilting mode. Especially, the competition between polar instability and oxygen pyramid tilting is identified using atomically resolved scanning transmission electron microscopy, leading to the polarization rotation across the phase boundary. In addition, microtwins are observed in the Cc phase. Our findings provide new insights of the coupling between ferroelectric polarization and oxygen pyramid tilting in oxide thin films and will help to design novel phase morphology with desirable ferroelectric polarization and properties for new applications in perovskite oxides.
Pulsed laser deposition of complex oxide heteroepitaxy
(2019-08-01)
Huang, Yen-Lin
;
Liu, Heng-Jui
;
Ma, Chun-Hao
;
Yu, Pu
;
Chu, Ying-Hao
The modern studies of complex oxides have been mainly driven by the development of advanced growth and characterization techniques, which provide researchers unprecedented access to new insights and functionalities of these materials. Epitaxial growth of thin films and related architectures offers a pathway to the discovery and stabilization of a wide spectrum of new possibilities in conjunction with the availability of high quality materials that produced with larger lateral sizes and being grown constrainedly. Compared with conventional growth techniques, such as sputtering, spin coating, sol-gel processes, metal-organic chemical vapor deposition, molecular beam epitaxy and so on, no other single advance in the creation of oxide materials has had as pronounced an impact as pulsed laser deposition. In pursuit of the fruitful functionalities and exciting physical phenomena among complex oxides, pulsed laser deposition technique has played an important role to fulfill the flurry of complex oxides in recent decades. In this article, we focus on the details of the growth of epitaxial oxide thin films and the related polymorphs, as well as recent advances in control of the oxide heteroepitaxy via pulsed laser deposition.
Direct observation of weakened interface clamping effect enabled ferroelastic domain switching
(2019-06-01)
Li, Mingqiang
;
Wang, Bo
;
Liu, Heng-Jui
;
Huang, Yen-Lin
;
Zhang, Jingmin
Reversible switching of non-180 degrees ferroelastic domains that largely alters the local strain distribution enables many electromechanical, electromagnetic and electroacoustic applications. However, in thin films, the ferroelastic domain walls are usually believed to be immobile because of the interface clamping and/or dislocation pinning. Here, using in situ and aberration-corrected transmission electron microscopy, we directly observe reversible switching of individual 90 degrees domains in dislocation-free PbTiO3 thin films and uncover the weakened interface clamping effect. We find the tetragonality is suppressed to similar to 1.017 while the polarization vectors rotate 45 degrees in the a-domain near the interface. These huge structural distortions at the interface is mainly responsible for the weakened clamping effect and thus the ability to switch ferroelastic domains. The switching is fully reversible (i.e., either electric field or mechanical stress can re-establish the erased domain) regardless of polarization orientation of the c-domain matrix. Phase-field modeling also shows excellent agreement with experimental observations. Our study reveals the mechanism of controllable and reversible ferroelastic domain switching, enabling the design of new actuators, sensors, and electromagnetic devices. (C) 2019 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Deterministic optical control of room temperature multiferroicity in BiFeO3 thin films
(2019-06-01)
Liou, Yi-De
;
Chiu, Yu-You
;
Hart, Ryan Thomas
;
Kuo, Chang-Yang
;
Huang, Yen-Lin
Controlling ferroic orders (ferroelectricity, ferromagnetism and ferroelasticity) by optical methods is a significant challenge due to the large mismatch in energy scales between the order parameter coupling strengths and the incident photons. Here, we demonstrate an approach to manipulate multiple ferroic orders in an epitaxial mixed-phase BiFeO3 thin film at ambient temperature via laser illumination. Phase-field simulations indicate that a light-driven flexoelectric effect allows the targeted formation of ordered domains. We also achieved precise sequential laser writing and erasure of different domain patterns, which demonstrates a deterministic optical control of multiferroicity at room temperature. As ferroic orders directly influence susceptibility and conductivity in complex materials, our results not only shed light on the optical control of multiple functionalities, but also suggest possible developments for optoelectronics and related applications.
Low-Voltage Operational, Low-Power Consuming, and High Sensitive Tactile Switch Based on 2D Layered InSe Tribotronics
(2019-05-09)
Li, Mengjiao
;
Yang, Feng-Shou
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Hsiao, Yung-Chi
;
Lin, Che-Yi
;
Wu, Hsing-Mei
Electronics based on layered indium selenide (InSe) channels exhibit promising carrier mobility and switching characteristics. Here, an InSe tribotronic transistor (denoted as w/In InSe T-FET) obtained through the vertical combination of an In-doped InSe transistor and triboelectric nanogenerator is demonstrated. The w/In InSe T-FET can be operated by adjusting the distance between two triboelectrification layers, which generates a negative electrostatic potential that serves as a gate voltage to tune the charge carrier transport behavior of the InSe channel. Benefiting from the surface charging doping of the In layer, the w/In InSe T-FET exhibits high reliability and sensitivity with a large on/off current modulation of 10(6) under a low drain-source voltage of 0.1 V and external frictional force. To demonstrate its function as a power-saving tactile sensor, the w/In InSe T-FET is used to sense INSE in Morse code and power on a light-emitting diode. This work reveals the promise of 2D material-based tribotronics for use in nanosensors with low power consumption as well as in intelligent systems.
Tetragonal BiFeO3 on yttria-stabilized zirconia
(2015-11-01)
Liu, Heng-Jui
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Du, Yu-Hao
;
Gao, Peng
;
Huang, Yen-Chin
;
Chen, Hsiao-Wen
High structural susceptibility of multiferroic BiFeO3 (BFO) makes it a potential replacement of current Pb-based piezoelectrics. In this study, a tetragonal phase is identified based on a combination of x-ray diffraction, scanning transmission electronic microscopy, x-ray absorption spectroscopy, and Raman spectroscopy when BFO is grown on yttria-stabilized zirconia (YSZ) substrates. To distinguish the discrepancy between this tetragonal phase and common cases of monoclinic BFO, piezoelectric force microscopy images and optical property are also performed. It shows a lower electrostatic energy of ferroelectric domains and a large reduction of band gap for BFO grown on YSZ substrate comparing to the well-known one grown on LaAlO3 substrate. Our findings in this work can provide more insights to understand the structural diversity of multiferroic BFO system for further applications. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
Photostriction of strontium ruthenate
(2017-04-24)
Wei, Tzu-Chiao
;
Wang, Hsin-Ping
;
Liu, Heng-Jui
;
Tsai, Dung-Sheng
;
Ke, Jr-Jian
Transition metal oxides with a perovskite crystal structure exhibit a variety of physical properties associated with the lattice. Among these materials, strontium ruthenate (SrRuO3) displays unusually strong coupling of charge, spin and lattice degrees of freedom that can give rise to the photostriction, that is, changes in the dimensions of material due to the absorption of light. In this study, we observe a photon-induced strain as high as 1.12% in single domain SrRuO3, which we attribute to a nonequilibrium of phonons that are a result of the strong interaction between the crystalline lattice and electrons excited by light. In addition, these light-induced changes in the SrRuO3 lattice affect its electrical resistance. The observation of both photostriction and photoresistance in SrRuO3 suggests the possibility of utilizing the mechanical and optical functionalities of the material for next-generation optoelectronics, such as remote switches, light-controlled elastic micromotors, microactuators and other optomechanical systems.

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