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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Liu, Shih-ChienHas files: Yes

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    Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs
    (2017-05-01)
    Liu, Shih-Chien
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    Huang, Chung-Kai
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    Chang, Chia-Hua
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    Lin, Yueh-Chin
    ;
    Chen, Bo-Yuan
    An effective passivation with high-density positive fixed charges was demonstrated on GaN MIS-HEMTs. The positive fixed charges at the interface between passivation and AlGaN surface can reduce the surface potential and expand the quantum well under Fermi level. Besides, to satisfy charge balance, the net charge density at the AlGaN surface must equal to the 2DEG carrier density. Thus, the positive fixed charges passivation can increase the 2DEG carrier density and improve the switching performance of GaN MIS-HEMTs. In this paper, we demonstrated a high-density positive fixed charges (similar to 2.71 x 10(13) e/cm(-2)) passivation using SiON for GaN MIS-HEMTs. The device with SiON passivation exhibits significant improvements in I-V characteristics and dynamic R-ON compared to the conventional SiN passivated device.
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    Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect
    (2014-07-01)
    Tsai, Szu-Ping
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    Hsu, Heng-Tung
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    Chiang, Che-Yang
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    Tu, Yung-Yi
    ;
    Chang, Chia-Hua
    We experimentally investigated the impact of different bump patterns on the output electrical characteristics of flip-chip (FC) bonded AlGaN/GaN high-electron mobility transistors in this letter. The bump patterns were designed and intended to provide different levels of tensile stress due to the mismatch in the coefficient of thermal expansion between the materials. After FC packaging, a maximum increase of 4.3% in saturation current was achieved compared with the bare die when proper arrangement of the bumps in active region was designed. In other words, a 17% improvement has been observed on the optimized bump pattern over the conventional bump pattern. To the best of our knowledge, this is the first letter that investigates the piezoelectric effect induced by FC bumps leading to the enhancement in device characteristics after packaging.